C&H Technology VS-GB75TP120N User Manual

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INT-A-PAK

Half Bridge IGBT Power Module, 1200 V, 75 A

PRODUCT SUMMARY

V

CES

at TC = 80 °C 75 A

I

C

(typical)

V

CE(on)

at I

= 75 A, TJ = 25 °C

C

1200 V

1.80 V

VS-GB75TP120N

Vishay Semiconductors

FEATURES

• High short circuit capability, self limiting to 6 x I

• 10 μs short circuit capability

•V

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

• AC inverter drivers

• Electronic welders

• Switching mode power supplies

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

with positive temperature coefficient

CE(on)

Bonding) technology

please see www.vishay.com/doc?99912

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time T

2

t-value, diode VR = 0 V, t = 10 ms, TJ = 125 °C 1050 A2s

I

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

FM

CES

GES

C

F

SC

ISOL

TC = 25 °C 150

= 80 °C 75

T

C

(1)

(1)

D

tp = 1 ms 150

TC = 80 °C 75

tp = 1 ms 150

TJ = 150 °C 543 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

1200

± 20

V

A

Revision: 17-Sep-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 94712

VS-GB75TP120N

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IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

VGE = 0 V, IC = 1.0 mA, TJ = 25 °C 1200 - -

VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.80 2.20

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

V

= 15 V, IC = 75 A, TJ = 125 °C - 2.05 -

GE

VCE = VGE, IC = 3.0 mA, TJ = 25 °C 5.0 6.2 7.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 5.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Internal gate rsistance R

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

GINT

CE

CC’+EE’

VCC = 600 V, IC = 75 A, Rg = 10 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 75 A, Rg = 10 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 25 V, f = 1.0 MHz,
T

= 25 °C

J

ts  10 μs, VGE = 15 V, TJ = 125 °C,
V

= 900 V, V

CC

CEM

 1200 V

Vishay Semiconductors

VCollector to emitter voltage V

- 305 -

-67-

- 328 -

- 187 -

-6.74-

-4.25-

- 310 -

-67-

- 347 -

- 337 -

-9.75-

-7.05-

-5.22-

-0.40-

-0.26-

- 420 - A

-3-

- - 30 nH

-0.75- m

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.70 2.10

T

Forward voltage V

Reverse recovery charge Q

F

rr

IF = 75 A

IF = 75 A, VR = 600 V,
dI

Peak reverse recovery current I

Reverse recovery energy E

rr

rec

Revision: 17-Sep-12

For technical questions within your region: [e-mail]

/dt = 1300 A/μs

F

V

= - 15 V

GE

2

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 1.75 -

J

= 25 °C - 4.01 -

T

J

T

= 125 °C - 9.29 -

J

TJ = 25 °C - 55 -

T

= 125 °C - 73 -

J

TJ = 25 °C - 2.89 -

T

= 125 °C - 4.46 -

J

Document Number: 94712

V

μC

A

mJ

VS-GB75TP120N

0

25

50

75

100

125

150

0 0.5 1 1.5 2 2.5 3 3.5

VCE (V)

I

C

(A)

25 °C

125 °C

VGE = 15 V

VGE (V)

I

C

(A)

0

25

50

75

100

125

150

678910111213

125 °C

VCE = 20 V

25 °C

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction temperature range T

Storage temperature range T

Junction to case

IGBT

per ½ module

Case to sink (Conductive grease applied) R

Mounting torque

Weight Weight of module - 150 - g

J

Stg

R

thJC

thCS

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 5.0

30

V

CC

= 10 Ω

R

g

25

VGE = ± 15 V

= 125 °C

T

J

20

Vishay Semiconductors

- - 150 °C

- 40 - 125 °C

- - 0.23

K/WDiode - - 1.32

-0.05-

Nm

= 600 V

Fig. 1 - IGBT Typical Output Characteristics

Fig. 2 - IGBT Typical Transfer Characteristics

E (mJ)

E (mJ)

15

10

5

0

0 25 50 75 100 125 150

E

on

E

off

IC (A)

Fig. 3 - IGBT Switching Loss vs. I

40

V

= 600 V

CC

35

I

= 75 A

C

VGE = ± 15 V

30

= 125 °C

T

J

25

20

15

10

5

0

020

E

on

E

off

40 60 80 100

Rg (Ω)

Fig. 4 - IGBT Switching Loss vs. R

C

g

Revision: 17-Sep-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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0

20

40

60

80

100

120

140

160

0

250 500 750 1000 1250 1500

VCE (V)

I

C

(A)

VGE = ± 15 V

T

J

= 125 °C

R

g

= 10 Ω

IC, Module

25 °C

0

10

VS-GB75TP120N

Vishay Semiconductors

Fig. 5 - RBSOA

(A)

F

I

Revision: 17-Sep-12

IGBT

-1

10

(K/W)

thJC

Z

-2

10

-3

10

-2

10

-1

10

0

10

1

10

t (s)

Fig. 6 - IGBT Transient Thermal Impedance

150

125

100

75

125 °C

50

25

0

0 0.5 1 1.5 2 2.5 3

VF (V)

Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I

4

For technical questions within your region: [e-mail]

6

E

5

4

3

rec

E (mJ)

2

1

0

0 25 50 75 100 125 150

V

= 600 V

CC

R

= 10 Ω

g

VGE = - 15 V

= 125 °C

T

J

IF (A)

C

Document Number: 94712

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

Z

thJC

(K/W)

t (s)

10

0

10

-1

10

-2

10

-3

10

-2

10

-1

10

0

10

1

DIODE

1

6
7

3

2

5
4

E (mJ)

5

4.5

4

3.5

3

2.5

2

1.5

V

= 600 V

CC

I

= 75 A

C

1

VGE = - 15 V

0.5

= 125 °C

T

J

0

020

40

E

rec

60 80 100

Rg (Ω)

VS-GB75TP120N

Vishay Semiconductors

CIRCUIT CONFIGURATION

Fig. 9 - Diode Switching Loss vs. R

g

Fig. 10 - Diode Transient Thermal Impedance

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95524

Revision: 17-Sep-12

For technical questions within your region: [e-mail]

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Document Number: 94712

Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

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Document Number: 91000