C&H Technology VS-GB75LP120N User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

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Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

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INT-A-PAK

PRODUCT SUMMARY

V

CES

at TC = 80 °C 75 A

I

C

(typical)

V

CE(on)

at I

= 75 A, 25 °C

C

VS-GB75LP120N

Vishay Semiconductors

Molding Type Module IGBT,

Chopper in 1 Package, 1200 V, 75 A

FEATURES

• High short circuit capability, self limiting to 6 x I

• 10 μs short circuit capability

with positive temperature coefficient

CE(on)

Bonding) technology

please see www.vishay.com/doc?99912

1200 V

1.82 V

•V

• Maximum junction temperature 150 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

• AC inverter drives

• Switching mode power supplies

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

C

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

2

t-value, diode I2tV

I

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 170

= 80 °C 75

T

C

(1)

D

tp = 1 ms 150

TJ = 150 °C 658 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

= 0 V, t = 10 ms, TJ = 125 °C 1190 A2s

R

1200

± 20

75

150

V

A

Revision: 01-Feb-13

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 94825

VS-GB75LP120N

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IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.82 -

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

= 15 V, IC = 75 A, TJ = 125 °C - 2.05 -

V

GE

VCE = VGE, IC = 3.0 mA, TJ = 25 °C 5.0 6.2 7.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 1.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Internal gate resistance R

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

gint

CE

CC’+EE’

VCC = 600 V, IC = 75 A, Rg = 4.7 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 75 A, Rg = 4.7 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 25 V, f = 1.0 MHz

tsc  10 μs, VGE = 15 V, TJ = 125 °C,

= 900 V, V

V

CC

CEM

 1200 V

TC = 25 °C - 0.75 - m

Vishay Semiconductors

VCollector to emitter voltage V

- 140 -

-37-

- 370 -

-55-

-7.2-

-4.5-

- 150 -

-40-

- 400 -

-64-

-9.0-

-7.4-

-5.52-

-0.40-

-0.26-

- 420 - A

-3-

- - 30 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 2.05 -

T

Diode forward voltage V

Diode reverse recovery charge t

F

rr

IF = 75 A

IF = 75 A, VR = 600 V,

Diode peak reverse recovery current I

Diode reverse recovery energy E

rr

rec

Revision: 01-Feb-13

For technical questions within your region: [e-mail]

/dt = - 2000 A/μs,

dI

F

V

= - 15 V

GE

2

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 2.25 -

J

= 25 °C - 100 -

T

J

T

= 125 °C - 125 -

J

TJ = 25 °C - 80 -

T

= 125 °C - 100 -

J

TJ = 25 °C - 3.0 -

T

= 125 °C - 6.0 -

J

Document Number: 94825

V

μC

A

mJ

VS-GB75LP120N

0

40

20

10

30

50

60

70

80

90

0 50 100 150 200 250

IC (A)

E

on

, E

off

(mJ)

VGE = ± 15 V
T

J

= 125 °C

R

g

= 4.7 Ω

V

CC

= 600 V

E

on

E

off

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

IGBT (per 1/2 module)

Case to sink R

Mounting torque

Weight of module 150 g

150

125

R

J

STG

thJC

thCS

Conductive grease applied - 0.05 -

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 6.0

Vishay Semiconductors

- 40 - 150

- 40 - 125

- - 0.19

°C

K/WDiode (per 1/2 module) - - 0.48

Nm

(A)

C

I

(A)

C

I

100

75

50

25

0

0 0.5 1 1.5 2 32.5

25 °C

VCE (V)

Fig. 1 - Typical Output Characteristics

150

VCE = 20 V

125

100

75

50

25

125 °C

125 °C

VGE = 15 V

25 °C

(mJ)

off

, E

on

E

Fig. 3 - Switching Loss vs. Collector Current

30

V

= 600 V

CC

I

= 75 A

C

25

20

15

10

5

VGE = ± 15 V

= 125 °C

T

J

E

on

E

off

0

01 32457968 1210 11 13

Revision: 01-Feb-13

Fig. 2 - Typical Transfer Characteristics

For technical questions within your region: [e-mail]

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VGE (V)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0

010203040 6050 70

Rg (Ω)

Fig. 4 - Switching Loss vs. Gate Resistor

3

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V

GE

(V)

0 0.20.1 0.3 0.5 0.70.4 0.6

0

5

10

15

20

TJ = 25 °C

I

C

= 75A

V

CC

= 600 V

Qg (μC)

10

2

10

4

10

3

10

1

010203040

Rg (Ω)

t (ns)

VGE = ± 15 V

T

J

=

125 °C

I

C

= 75 A

V

CC

= 600 V

t

d(off)

t

d(on)

t

f

t

r

Fig. 5 - Gate Charge Characteristics

t (ns)

VS-GB75LP120N

Vishay Semiconductors

3

10

t

t

2

10

t

t

V

= 600 V

CC

R

= 4.7 Ω

g

VGE = ± 15 V

= 125 °C

T

1

10

0 50 100 150 200

IC (A)

Fig. 7 - Typical Switching Time vs. I

J

d(off)

d(on)

f

r

C

1

C

ies

0

C (nF)

C

oes

C

res

0.1
0 5 10 15 20 25 30 35

VCE (V)

Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage

300

250

200

150

(A)

F

I

100

25 °C

Fig. 8 - Typical Switching Time vs. Gate Resistance R

125 °C

g

Revision: 01-Feb-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

50

0

01234

VF (V)

Fig. 9 - Diode Typical Forward Characteristics

4

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tp (s)

Z

thJC

(K/W)

10

0

10

-1

10

-2

10

-3

10

-4

10

0

10

-1

10

-2

10

-3

10

-4

10

-5

IGBT

Diode

CIRCUIT CONFIGURATION

Fig. 10 - Transient Thermal Impedance

VS-GB75LP120N

Vishay Semiconductors

6
7

1

2

3

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95524

Revision: 01-Feb-13

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Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000