C&H Technology VS-GB75LP120N User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

INT-A-PAK

PRODUCT SUMMARY

V

CES

at TC = 80 °C 75 A

I

C

(typical)

V

CE(on)

at I

= 75 A, 25 °C

C

VS-GB75LP120N

Vishay Semiconductors

Molding Type Module IGBT,

Chopper in 1 Package, 1200 V, 75 A

FEATURES

• High short circuit capability, self limiting to 6 x I

• 10 μs short circuit capability

with positive temperature coefficient

CE(on)

Bonding) technology

please see www.vishay.com/doc?99912

1200 V

1.82 V

•V

• Maximum junction temperature 150 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

• AC inverter drives

• Switching mode power supplies

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

C

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

2

t-value, diode I2tV

I

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 170

= 80 °C 75

T

C

(1)

D

tp = 1 ms 150

TJ = 150 °C 658 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

= 0 V, t = 10 ms, TJ = 125 °C 1190 A2s

R

1200

± 20

75

150

V

A

Revision: 01-Feb-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 94825

VS-GB75LP120N

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.82 -

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

= 15 V, IC = 75 A, TJ = 125 °C - 2.05 -

V

GE

VCE = VGE, IC = 3.0 mA, TJ = 25 °C 5.0 6.2 7.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 1.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Internal gate resistance R

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

gint

CE

CC’+EE’

VCC = 600 V, IC = 75 A, Rg = 4.7 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 75 A, Rg = 4.7 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 25 V, f = 1.0 MHz

tsc  10 μs, VGE = 15 V, TJ = 125 °C,

= 900 V, V

V

CC

CEM

 1200 V

TC = 25 °C - 0.75 - m

Vishay Semiconductors

VCollector to emitter voltage V

- 140 -

-37-

- 370 -

-55-

-7.2-

-4.5-

- 150 -

-40-

- 400 -

-64-

-9.0-

-7.4-

-5.52-

-0.40-

-0.26-

- 420 - A

-3-

- - 30 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 2.05 -

T

Diode forward voltage V

Diode reverse recovery charge t

F

rr

IF = 75 A

IF = 75 A, VR = 600 V,

Diode peak reverse recovery current I

Diode reverse recovery energy E

rr

rec

Revision: 01-Feb-13

For technical questions within your region: [e-mail]

/dt = - 2000 A/μs,

dI

F

V

= - 15 V

GE

2

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 2.25 -

J

= 25 °C - 100 -

T

J

T

= 125 °C - 125 -

J

TJ = 25 °C - 80 -

T

= 125 °C - 100 -

J

TJ = 25 °C - 3.0 -

T

= 125 °C - 6.0 -

J

Document Number: 94825

V

μC

A

mJ