C&H Technology VS-GB600AH120N User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

Double INT-A-PAK

PRODUCT SUMMARY

V

CES

at TC = 80 °C 600 A

I

C

(typical)

V

CE(on)

at I

= 600 A, 25 °C

C

Package Double INT-A-PAK

Circuit Single Switch Diode

VS-GB600AH120N

Vishay Semiconductors

Molding Type Module IGBT,

1-in-1 Package, 1200 V and 600 A

FEATURES

• High short circuit capability, self limiting to 6 x I

• 10 μs short circuit capability

1200 V

1.9 V

•V

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

• AC inverter drives

• Switching mode power supplies

• Electronic welder at f

DESCRIPTION

Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as inverters and UPS.



with positive temperature coefficient

CE(on)

Bonding) technology

please see www.vishay.com/doc?99912

up to 20 kHz

sw

C

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current at T

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

2

t-value, diode I2tV

I

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

= 150 °C I

J

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C, TJ = 150 °C 910

= 80 °C, TJ = 150 °C 600

T

C

(1)

D

TC = 80 °C 1200

TJ = 150 °C 3125 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

= 0 V, t = 10 ms, TJ = 125 °C 74 000 A2s

R

1200

± 20

600

1200

V

A

Revision: 27-May-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 94791

VS-GB600AH120N

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 600 A, TJ = 25 °C - 1.9 -

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

= 15 V, IC = 600 A, TJ = 125 °C - 2.1 -

V

GE

VCE = VGE, IC = 24 mA, TJ = 25 °C 5.0 6.2 7.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 5.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 600 V, IC = 600 A, Rg = 3 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 600 A, Rg = 3 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 25 V, f = 1.0 MHz

tSC  10 μs, VGE = 15 V, TJ = 25 °C,

= 900 V, V

V

CC

CEM

 1200 V

TC = 25 °C - 0.18 - m

Vishay Semiconductors

VCollector to emitter voltage V

- 200 -

-62-

- 510 -

-60-

-39-

-48-

- 210 -

-65-

- 600 -

-75-

-45-

-60-

- 41.0 -

-3.1-

-2.0-

- 2600 - A

- - 20 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.8 2.4

T

Diode forward voltage V

Diode reverse recovery charge Q

F

rr

IF = 600 A

IF = 600 A, VR = 600 V,

Diode peak reverse recovery current I

Diode reverse recovery energy E

rr

rec

Revision: 27-May-13

For technical questions within your region: [e-mail]

/dt = - 6000 A/μs,

dI

F

V

= - 15 V

GE

2

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 1.9 -

J

= 25 °C - 65 -

T

J

T

= 125 °C - 100 -

J

TJ = 25 °C - 450 -

T

= 125 °C - 510 -

J

TJ = 25 °C - 35 -

T

= 125 °C - 42 -

J

Document Number: 94791

V

μC

A

mJ