C&H Technology VS-GB50NP120N User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

INT-A-PAK

Molding Type Module IGBT, Chopper in 1 Package,

PRODUCT SUMMARY

V

CES

at TC = 80 °C 50 A

I

C

(typical)

V

CE(on)

at I

= 50 A, 25 °C

C

1200 V and 50 A

1200 V

1.7 V

VS-GB50NP120N

Vishay Semiconductors

FEATURES

• High short circuit capability, self limiting to 6 x I

• 10 μs short circuit capability

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

•V

with positive temperature coefficient

CE(on)

• Speed 8 kHz to 60 kHz

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• AC inverter drives

• Switching mode power supplies

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

C

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

2

t-value, diode I2tV

I

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 100

= 80 °C 50

T

C

(1)

D

tp = 1 ms 100

TJ = 150 °C 446 W

TJ = 125 °C 10 μs

= 0 V, t = 10 ms, TJ = 125 °C 420 A2s

R

f = 50 Hz, t = 1 min 2500 V

1200

± 20

50

100

V

A

Revision: 06-Aug-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 93418

VS-GB50NP120N

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.70 -

Gate to emitter threshold voltage V

Zero gate voltage collector current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

= 15 V, IC = 50 A, TJ = 125 °C - 1.95 -

V

GE

VCE = VGE, IC = 2 mA, TJ = 25 °C 5.0 6.2 7.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 1.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Internal gate resistance R

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

gint

CE

CC’+EE’

VCC = 600 V, IC = 50 A, Rg = 18 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 50 A, Rg = 18 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 25 V, f = 1.0 MHz

tsc  10 μs, VGE = 15 V, TJ = 125 °C,
V

= 900 V, V

CC

CEM

 1200 V

TC = 25 °C - 0.75 - m

Vishay Semiconductors

VCollector to emitter saturation voltage V

- 220 -

-60-

- 420 -

-60-

-2.1-

-2.6-

- 270 -

-60-

- 500 -

-65-

-4.1-

-4.7-

-4.29-

-0.30-

-0.20-

- 270 - A

-10- 

- - 30 nH

ns

mJ

ns

mJ

nFOutput capacitance C

Revision: 06-Aug-12

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 93418

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000