C&H Technology VS-GB50NP120N User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

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Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

INT-A-PAK

Molding Type Module IGBT, Chopper in 1 Package,

PRODUCT SUMMARY

V

CES

at TC = 80 °C 50 A

I

C

(typical)

V

CE(on)

at I

= 50 A, 25 °C

C

1200 V and 50 A

1200 V

1.7 V

VS-GB50NP120N

Vishay Semiconductors

FEATURES

• High short circuit capability, self limiting to 6 x I

• 10 μs short circuit capability

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

•V

with positive temperature coefficient

CE(on)

• Speed 8 kHz to 60 kHz

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• AC inverter drives

• Switching mode power supplies

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

C

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

2

t-value, diode I2tV

I

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 100

= 80 °C 50

T

C

(1)

D

tp = 1 ms 100

TJ = 150 °C 446 W

TJ = 125 °C 10 μs

= 0 V, t = 10 ms, TJ = 125 °C 420 A2s

R

f = 50 Hz, t = 1 min 2500 V

1200

± 20

50

100

V

A

Revision: 06-Aug-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 93418

VS-GB50NP120N

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.70 -

Gate to emitter threshold voltage V

Zero gate voltage collector current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

= 15 V, IC = 50 A, TJ = 125 °C - 1.95 -

V

GE

VCE = VGE, IC = 2 mA, TJ = 25 °C 5.0 6.2 7.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 1.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Internal gate resistance R

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

gint

CE

CC’+EE’

VCC = 600 V, IC = 50 A, Rg = 18 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 50 A, Rg = 18 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 25 V, f = 1.0 MHz

tsc  10 μs, VGE = 15 V, TJ = 125 °C,
V

= 900 V, V

CC

CEM

 1200 V

TC = 25 °C - 0.75 - m

Vishay Semiconductors

VCollector to emitter saturation voltage V

- 220 -

-60-

- 420 -

-60-

-2.1-

-2.6-

- 270 -

-60-

- 500 -

-65-

-4.1-

-4.7-

-4.29-

-0.30-

-0.20-

- 270 - A

-10- 

- - 30 nH

ns

mJ

ns

mJ

nFOutput capacitance C

Revision: 06-Aug-12

For technical questions within your region: [e-mail]

2

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Document Number: 93418

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GB50NP120N

I

C

(A)

VCE (V)

0312 4

0

93418_01

171

57

28.5

114

85.5

142.5

TJ = 125 °C

TJ = 25 °C

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DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 2.15 -

T

Diode forward voltage V

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery energy E

RM

rec

IF = 50 A

F

rr

IF = 50 A, VR = 600 V,
dI/dt = - 2100 A/μs,
V

GE

= - 15 V

J

T

= 125 °C - 2.35 -

J

T

= 25 °C - 90 -

J

T

= 125 °C - 130 -

J

TJ = 25 °C - 52 -

T

= 125 °C - 60 -

J

TJ = 25 °C - 1.9 -

T

= 125 °C - 4.0 -

J

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

IGBT

per ½ module

Case to sink R

Mounting torque

Weight 150 g

R

J

Stg

thJC

thCS

Conductive grease applied - 0.05 -

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 6.0

Vishay Semiconductors

V

ns

A

mJ

- 40 - 150

- 40 - 125

- - 0.28

°C

K/WDiode - - 0.65

Nm

Revision: 06-Aug-12

Fig. 1 - Typical Output Characteristics

V

= 15 V

GE

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3

171

142.5

114

85.5

(A)

C

I

57

28.5

0

02 513 64897111210 13

93418_02

TJ = 125 °C

TJ = 25 °C

VGE (V)

Fig. 2 - Typical Transfer Characteristics

VCE = 20 V

Document Number: 93418

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E

on

, E

off

(mJ)

IC (A)

010020 4010 30 50 7060 80 90

0

1

2

4

8

6

3

5

9

7

93418_03

10

E

on

E

off

t (ns)

IC (A)

012020 40 60 10080

10

93418_07

1000

100

t

d(off)

t

d(on)

t

f

t

r

C (nF)

VS-GB50NP120N

Vishay Semiconductors

10

C

ies

1

C

oes

C

res

(mJ)

off

, E

on

E

93418_04

Fig. 3 - Switching Loss vs. Collector Current

T

= 125 °C, VCC = 600 V, VGE = ± 15 V, Rg = 18 

J

10

9

8

7

6

5

4

3

2

1

0

06010 20 30 40 50

E

on

E

off

Rg (Ω)

Fig. 4 - Switching Loss vs. Gate Resistance

T

= 125 °C, VCC = 600 V, VGE = ± 15 V, IC = 50 A

J

20

0.1

93418_06

5152510 20 30

0

VCE (V)

35

Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage

Fig. 7 - Typical Switching Time vs. I

TJ = 125 °C, VCC = 600 V, VGE = ± 15 V, Rg = 18 

1000

t

C

d(off)

15

(V)

10

GE

V

5

93418_05

Revision: 06-Aug-12

0

0 0.2 0.4 0.50.1 0.3 0.6

Fig. 5 - Gate Charge Characteristics

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VCC = 600 V

I

= 50 A, TJ = 25 °C

C

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Qg (μC)

VCC = 900 V

4

100

t (ns)

10

010 4020 5030 60

93418_08

Rg (Ω)

Fig. 8 - Typical Switching Time vs. Gate Resistance

T

= 125 °C, VCC = 600 V, VGE = ± 15 V, IC = 50 A

J

Document Number: 93418

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t

d(on)

t

r

t

f

www.vishay.com

I

F

(A)

VF (V)

03.50.5 1.5 2.51.0 2.0 3.0

0

93418_09

100

40

30

80

20

60

90

70

10

50

125 °C

25 °C

VS-GB50NP120N

Vishay Semiconductors

Fig. 9 - Typical Forward Characteristics (Diode)

1

0.1

(K/W)

0.01

thJC

Z

0.001

0.0001

0.00001 0.0001 0.001 0.01 0.1 1

93418_10

CIRCUIT CONFIGURATION

tp (s)

Fig. 10 - Transient Thermal Impedance

1

2

Diode

IGBT

6
7

3

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95524

Revision: 06-Aug-12

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Document Number: 93418

Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

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Document Number: 91000