6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
www.vishay.com
Double INT-A-PAK
PRODUCT SUMMARY
V
CES
at TC = 80 °C 300 A
I
C
(typical)
V
CE(on)
at I
= 300 A, 25 °C
C
VS-GB300AH120N
Vishay Semiconductors
Molding Type Module IGBT,
1-in-1 Package, 1200 V and 300 A
FEATURES
• High short circuit capability, self limiting to 6 x I
• 10 μs short circuit capability
with positive temperature coefficient
CE(on)
Bonding) technology
please see www.vishay.com/doc?99912
sw
1200 V
1.90 V
•V
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
• Speed: 8 kHz to 60 kHz
• Material categorization: For definitions of compliance
TYPICAL APPLICATIONS
• Switching mode power supplies
• AC inverter drives
• Electronic welders at f
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
C
up to 20 kHz
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Gate to emitter voltage V
Collector current at T
Pulsed collector current I
Diode continuous forward current I
Diode maximum forward current I
Maximum power dissipation P
Short circuit withstand time t
2
t-value, diode I2tV
I
RMS isolation voltage V
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
= 150 °C I
J
CM
CES
GES
C
F
FM
SC
ISOL
TC = 25 °C 620
= 80 °C 300
T
C
(1)
D
TC = 80 °C 600
TJ = 150 °C 2500 W
TJ = 125 °C 10 μs
= 0 V, t = 10 ms, TJ = 125 °C 19 000 A2s
R
f = 50 Hz, t = 1 min 2500 V
1200
± 20
300
600
V
A
Revision: 06-Aug-12
For technical questions within your region: indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, ,
Document Number: 93475
VS-GB300AH120N
www.vishay.com
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
TJ = 25 °C 1200 - -
VGE = 15 V, IC = 300 A, TJ = 25 °C - 1.9 -
Gate to emitter threshold voltage V
Zero gate voltage collector current I
Gate to emitter leakage current I
CE(on)
GE(th)
CES
GES
= 15 V, IC = 300 A, TJ = 125 °C - 2.1 -
V
GE
VCE = VGE, IC = 12 mA, TJ = 25 °C 5 6.2 7.0
VCE = V
VGE = V
, VGE = 0 V, TJ = 25 °C - - 5.0 mA
CES
, VCE = 0 V, TJ = 25 °C - - 400 nA
GES
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Input capacitance C
Reverse transfer capacitance C
SC data I
Stray inductance L
Module lead resistance, terminal to chip R
d(on)
r
d(off)
f
on
off
d(on)
r
d(off)
f
on
off
ies
oes
res
SC
CE
CC’+EE’
VCC = 600 V, IC = 300 A, Rg = 4.7 ,
V
= ± 15 V, TJ = 25 °C
GE
VCC = 600 V, IC = 300 A, Rg = 4.7 ,
V
= ± 15 V, TJ = 125 °C
GE
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc 10 μs, VGE = 15 V, TJ = 125 °C,
= 900 V, V
V
CC
CEM
1200 V
TC = 25 °C - 0.18 - m
Vishay Semiconductors
VCollector to emitter saturation voltage V
-90-
-55-
- 460 -
-55-
-28-
-25-
- 110 -
-60-
- 500 -
-60-
-31-
-27-
-21-
-1.5-
-0.9-
- 1300 - A
- - 20 nH
ns
mJ
ns
mJ
nFOutput capacitance C
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
= 25 °C - 2.0 2.4
T
Diode forward voltage V
Diode reverse recovery charge Q
F
rr
IF = 300 A
IF = 300 A, VR = 600 V,
Diode peak reverse recovery current I
Diode reverse recovery energy E
Revision: 06-Aug-12
rr
rec
dI/dt = - 2400 A/μs,
= - 15 V
V
GE
2
For technical questions within your region: indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
J
T
= 125 °C - 2.2 2.5
J
= 25 °C - 27 -
T
J
T
= 125 °C - 50 -
J
TJ = 25 °C - 120 -
T
= 125 °C - 170 -
J
TJ = 25 °C - 9 -
T
= 125 °C - 20 -
J
Document Number: 93475
, ,
V
μC
A
mJ
VS-GB300AH120N
I
C
(A)
VCE (V)
0123
0
93475_01
600
200
100
400
300
500
TJ = 125 °C
TJ = 25 °C
E
on
, E
off
(mJ)
IC (A)
0600400200
0
20
40
60
93475_03
80
E
off
E
on
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
Storage temperature range T
Junction to case
IGBT
per module
Case to sink R
Mounting torque
Weight 310 g
J
Stg
R
thJC
thCS
Conductive grease applied - 0.035 -
Power terminal screw: M6 2.5 to 5.0
Mounting screw: M6 3.0 to 6.0
Vishay Semiconductors
- 40 - 150
- 40 - 125
- - 0.05
°C
K/WDiode - - 0.12
Nm
Fig. 1 - Typical Output Characteristics
V
= 15 V
GE
600
500
400
300
(A)
C
I
200
100
0
0841216
93475_02
Revision: 06-Aug-12
Fig. 2 - Typical Transfer Characteristics
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
TJ = 125 °C
TJ = 25 °C
VGE (V)
V
= 20 V
CE
For technical questions within your region: indmodules@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
(mJ)
off
, E
on
E
93475_04
Fig. 3 - Switching Loss vs. Collector Current
= 600 V, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C
V
CC
140
120
100
80
60
40
20
0
04010 20 30
E
on
E
Rg (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
V
= 600 V, IC = 300 A, VGE = ± 15 V, TJ = 125 °C
CC
Document Number: 93475
, ,
off
www.vishay.com
V
GE
(V)
Qg (μC)
02134
93475_05
20
0
- 8
16
4
- 4
8
12
t (ns)
IC (A)
0600200 400
10
93475_07
1000
100
t
d(off)
t
d(on)
t
f
t
r
VS-GB300AH120N
Vishay Semiconductors
Fig. 5 - Gate Charge Characteristics
V
= 600 V, IC = 300 A, TJ = 25 °C
CC
100
C
ies
10
C
oes
C (nF)
93475_06
0.1
1
0
C
res
5152510 20 30
VCE (V)
35
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
400
300
Fig. 7 - Typical Switching Times vs. I
VCC = 600 V, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C
10 000
t
d(off)
1000
t
d(on)
t (ns)
100
t
10
0 10203040
93475_08
Rg (Ω)
Fig. 8 - Typical Switching Times vs. Gate Resistance
V
= 600 V, IC = 300 A, VGE = ± 15 V, TJ = 125 °C
CC
C
t
r
f
200
(A)
F
I
100
Revision: 06-Aug-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
93475_09
For technical questions within your region: indmodules@vishay.com
0
0312
Fig. 9 - Typical Forward Characteristics (Diode)
25 °C
VF (V)
4
125 °C
Document Number: 93475
, ,
www.vishay.com
1
0.1
(K/W)
0.01
thJC
Z
0.001
0.0001
0.00001 0.0001 0.001 0.01 0.1 1
93475_10
CIRCUIT CONFIGURATION
VS-GB300AH120N
Vishay Semiconductors
Diode
IGBT
tp (s)
Fig. 10 - Transient Thermal Impedance
12
35
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95526
Revision: 06-Aug-12
5
For technical questions within your region: indmodules@vishay.com
, ,
Document Number: 93475
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
Loading...