C&H Technology VS-GB150TH120U User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

Double INT-A-PAK

PRODUCT SUMMARY

V

CES

at TC = 80 °C 150 A

I

C

(typical)

V

CE(on)

at I

= 150 A, TJ = 25 °C

C

VS-GB150TH120U

Vishay Semiconductors

Molding Type Module IGBT,

2 in 1 Package, 1200 V and 150 A

FEATURES

• 10 μs short circuit capability

• Low switching losses

• Rugged with ultrafast performance

1200 V

3.10 V

•V

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

• Inductive heating

• Electronic welder

• Switching mode power supplies

DESCRIPTION

Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.

with positive temperature coefficient

CE(on)

Bonding) technology

please see www.vishay.com/doc?99912

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time T

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

FM

CES

GES

C

F

SC

ISOL

TC = 25 °C 280

= 80 °C 150

T

C

(1)

(1)

D

tp = 1 ms 300

TC = 80 °C 150

tp = 1 ms 300

TJ = 150 °C 1147 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

1200

± 20

V

A

Revision: 19-Oct-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

1

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 94714

VS-GB150TH120U

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 150 A, TJ = 25 °C - 3.10 3.60

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(sat)

GE(th)

CES

GES

V

= 15 V, IC = 150 A, TJ = 125 °C - 3.45 -

GE

VCE = VGE, IC = 1.5 mA, TJ = 25 °C 4.4 5.2 6.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 5.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Internal gate rsistance R

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

g

CE

CC’+EE’

VCC = 600 V, IC = 150 A, Rg = 6.8 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 150 A, Rg = 6.8 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz

tp  10 μs, VGE = 15 V, TJ = 25 °C,
V

= 600 V, V

CC

CEM

 1200 V

TC = 25 °C - 0.32 - m

Vishay Semiconductors

VCollector to emitter saturation voltage V

- 612 -

- 116 -

- 546 -

- 125 -

- 17.7 -

-8.9-

- 609 -

- 116 -

- 564 -

- 148 -

- 17.5 -

- 11.0 -

- 12.7 -

-1.14-

-0.46-

- 1400 - A

-2.4- 

- - 18 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.75 2.15

T

Forward voltage V

Reverse recovery charge Q

F

rr

IF = 100 A

IF = 150 A, VR = 600 V,
dI

Peak reverse recovery current I

Reverse recovery energy E

rr

rec

Revision: 19-Oct-12

For technical questions within your region: [e-mail]

/dt = - 1500 A/μs

F

V

= - 15 V

GE

2

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 1.80 -

J

= 25 °C - 8.2 -

T

J

T

= 125 °C - 19.1 -

J

TJ = 25 °C - 85 -

T

= 125 °C - 125 -

J

TJ = 25 °C - 4.2 -

T

= 125 °C - 8.4 -

J

Document Number: 94714

V

μC

A

mJ

VS-GB150TH120U

Rg (Ω)

E

on

,E

off

(mJ)

0

10

20

30

40

50

60

70

80

0

10

20

30 40 50

VGE = ± 15 V

T

J

= 125 °C

I

C

= 150 A

V

CC

= 600 V

E

on

E

off

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction temperature range T

Storage temperature range T

Junction to case

IGBT

Case to sink (Conductive grease applied) R

Mounting torque

Weight Weight of module - 300 - g

J

Stg

R

JC

CS

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 6.0

Vishay Semiconductors

- - 150 °C

- 40 - 125 °C

- - 0.109

K/WDiode - - 0.180

- 0.035 -

Nm

(A)

C

I

(A)

C

I

300

VGE = 15 V

250

200

150

100

50

0

0 1 2 3 4 5

25 °C

125 °C

VCE (V)

Fig. 1 - IGBT Typical Output Characteristics

300

VCE = 20 V

250

200

150

100

125 °C

25 °C

(mJ)

off

,E

on

E

60

V

= 600 V

CC

= 6.8 Ω

R

g

50

VGE = ± 15 V

T

= 125 °C

J

40

30

20

10

0

0 50 100 150 200 250 300

IC (A)

E

on

E

off

Fig. 3 - IGBT Switching Loss vs. I

C

Revision: 19-Oct-12

50

0

4 5 6 7 8 9 10 11

VGE (V)

Fig. 2 - IGBT Typical Transfer Characteristics

3

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

Fig. 4 - IGBT Switching Loss vs. R

Document Number: 94714

g

www.vishay.com

0

50

100

150

200

250

300

350

0 300 600 900 1200 1500

VCE (V)

I

C

(A)

VGE = ± 15 V

T

J

= 125 °C

R

g

= 6.8 Ω

IC, Module

Z

thJC

(K/W)

t (s)

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

IGBT

E (mJ)

0

2

4

6

8

10

12

0 50 100 150 200 250 300

IF (A)

E

rec

VGE = - 15 V
T

J

= 125 °C

V

CC

= 600 V

R

g

= 6.8 Ω

VS-GB150TH120U

Vishay Semiconductors

Fig. 5 - RBSOA

300

250

25 °C

200

150

(A)

F

I

100

50

Revision: 19-Oct-12

0

0 1 1.5 2 2.5 3

0.5

VF (V)

Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

125 °C

Fig. 6 - IGBT Transient Thermal Impedance

4

, [e-mail], [e-mail]

F

Document Number: 94714

www.vishay.com

Rg (Ω)

E (mJ)

0

2

4

6

8

10

12

010

20

30 40 50

VGE = - 15 V

T

J

= 125 °C

I

C

= 150 A

V

CC

= 600 V

E

rec

Z

thJC

(K/W)

t (s)

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

DIODE

1

6
7

3

2

5
4

VS-GB150TH120U

Vishay Semiconductors

CIRCUIT CONFIGURATION

Fig. 9 - Diode Switching Loss vs. R

g

Fig. 10 - Diode Transient Thermal Impedance

Dimensions www.vishay.com/doc?95525

Revision: 19-Oct-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

5

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

Document Number: 94714

LINKS TO RELATED DOCUMENTS

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000