C&H Technology VS-GB100TP120U User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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Fax [phone]

[phone]

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

INT-A-PAK

PRODUCT SUMMARY

V

CES

at TC = 80 °C 100 A

I

C

(typical)

V

CE(on)

at I

= 100 A, 25 °C

C

Package INT-A-PAK

Circuit Half Bridge

Molding Type Module IGBT,

2 in 1 Package, 1200 V, 100 A

FEATURES

• 10 μs short circuit capability

with positive temperature coefficient

CE(on)

Bonding) technology

please see www.vishay.com/doc?99912

1200 V

3.45 V

•V

• Rugged with ultrafast performance

• Square RBSOA

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

• Switching mode power supplies

• Inductive heating

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

VS-GB100TP120U

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

2

t-value, diode I2tV

I

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 150

= 80 °C 100

T

C

(1)

D

tp = 1 ms 200

TJ = 150 °C 735 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

= 0 V, t = 10 ms, TJ = 125 °C 1700 A2s

R

1200

± 20

100

200

V

A

Revision: 17-May-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 94823

VS-GB100TP120U

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 100 A, TJ = 25 °C - 3.45 3.90

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

V

= 15 V, IC = 100 A, TJ = 125 °C - 3.75 -

GE

VCE = VGE, IC = 1 mA, TJ = 25 °C 4.4 5.0 6.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 2.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 600 V, IC = 100 A, Rg = 5.6 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 100 A, Rg = 5.6 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 25 V, f = 1.0 MHz, 
T

= 25 °C

J

tsc  10 μs, VGE = 15 V, TJ = 125 °C, 

= 900 V, V

V

CC

CEM

 1200 V

TC = 25 °C - 0.75 - m

Vishay Semiconductors

VCollector to emitter voltage V

- 310 -

-64-

- 350 -

- 105 -

-4.76-

-4.25-

- 328 -

-65-

- 350 -

- 132 -

-7.20-

-5.50-

-4.30-

-0.40-

-0.16-

- 310 - A

- - 30 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 2.05 2.45

T

Diode forward voltage V

Diode reverse recovery charge Q

F

rr

IF = 100 A

IF = 100 A, VR = 600 V,

Diode peak reverse recovery current I

Diode reverse recovery energy E

rr

rec

Revision: 17-May-13

For technical questions within your region: [e-mail]

/dt = - 1950 A/μs,

dI

F

V

= - 15 V

GE

2

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 1.95 -

J

= 25 °C - 5.4 -

T

J

T

= 125 °C - 11.2 -

J

TJ = 25 °C - 81 -

T

= 125 °C - 101 -

J

TJ = 25 °C - 3.54 -

T

= 125 °C - 6.57 -

J

Document Number: 94823

V

μC

A

mJ