C&H Technology VS-GB100TH120U User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

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Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

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Double INT-A-PAK

PRODUCT SUMMARY

V

CES

at TC = 80 °C 100 A

I

C

(typical)

V

CE(on)

at I

= 100 A, 25 °C

C

VS-GB100TH120U

Vishay Semiconductors

Molding Type Module IGBT,

2 in 1 Package, 1200 V and 100 A

FEATURES

• NPT IGBT technology

• 10 μs short circuit capability

• Low switching losses

• Rugged with ultrafast performance

1200 V

3.10 V

•V

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

• Switching mode power supplies

• Inductive heating

• Electronic welder

DESCRIPTION

Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welders and inductive
heating.

with positive temperature coefficient

CE(on)

Bonding) technology

please see www.vishay.com/doc?99912

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

FM

CES

GES

C

F

ISOL

TC = 25 °C 200

= 80 °C 100

T

C

(1)

(1)

D

tp = 1 ms 200

TJ = 150 °C 1136 W

f = 50 Hz, t = 1 min 2500 V

1200

± 20

100

200

V

A

Revision: 20-Sep-12

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Document Number: 93413

VS-GB100TH120U

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IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 100 A, TJ = 25 °C - 3.10 3.60

Gate to emitter threshold voltage V

Zero gate voltage collector current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

= 15 V, IC = 100 A, TJ = 125 °C - 3.45 -

V

GE

VCE = VGE, IC = 1 mA, TJ = 25 °C 4.4 4.9 6.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 5.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Short circuit withstand time t

Input capacitance C

Reverse transfer capacitance C

SC data I

Internal gate resistance R

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

SC

ies

oes

res

SC

GINT

CE

CC’+EE’

VCC = 600 V, IC = 100 A, Rg = 5.6 ,
V

= ± 15 V, L = 200 nH, TJ = 25 °C

GE

VCC = 600 V, IC = 100 A, Rg = 5.6 ,
V

= ± 15 V, L = 200 nH, TJ = 125 °C

GE

TJ = 125 °C - - 10 μs

VGE = 0 V, VCE = 20 V, f = 1.0 MHz

tp  10 μs, VGE = ± 15 V, VCC = 600 V,

V

 1200 V, TJ = 25 °C

CEM

Vishay Semiconductors

VCollector to emitter voltage V

- 300 -

-64-

- 340 -

- 105 -

-4.76-

-4.25-

- 320 -

-65-

- 350 -

- 132 -

-7.20-

-5.50-

-8.45-

-0.76-

-0.31-

- 900 -

-2.4- 

- - 18 nH

-0.32-m

ns

mJ

ns

mJ

nFOutput capacitance C

Revision: 20-Sep-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GB100TH120U

I

C

(A)

VCE (V)

0 3.01.0 2.0 4.0 5.0

0

50

25

150

100

200

75

175

125

TJ = 125 °C

TJ = 25 °C

VGE = 15 V

I

C

(A)

VGE (V)

57 1068 119

200

60

20

0

140

100

180

40

120

80

160

TJ = 125 °C

TJ = 25 °C

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DIODE ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.82 2.22

T

Diode forward voltage V

Diode reverse recovery charge Q

Diode peak reverse recovery current I

Diode reverse recovery energy t

IF = 100 A

F

rr

IF = 100 A, VR = 600 V,

/dt = - 1900 A/μs,

dI

rr

rr

F

V

GE

= - 15 V

C

T

= 125 °C - 1.95 -

C

T

= 25 °C - 5.4 -

C

T

= 125 °C - 11.2 -

C

TC = 25 °C - 81 -

T

= 125 °C - 101 -

C

TC = 25 °C - 3.45 -

T

= 125 °C - 6.57 -

C

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

IGBT

Case to sink R

Mounting torque

Weight 300 g

J

Stg

R

thJC

thCS

Conductive grease applied - 0.035 -

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 6.0

Vishay Semiconductors

V

μC

A

mJ

- 40 - 150

- 40 - 125

- - 1.41

°C

°C/WDiode - - 0.225

Nm

Revision: 20-Sep-12

Fig. 1 - IGBT Typical Output Characteristics Fig. 2 - IGBT Typical Transfer Characteristics

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E

on

, E

off

(mJ)

IC (A)

0 100 20050 150

0

5

10

15

25

20

VGE = ± 15 V

T

J

= 125 °C

R

g

= 5.6

Ω

VCC = 600 V

E

on

E

off

VS-GB100TH120U

Vishay Semiconductors

Fig. 3 - Switching Loss vs. I

250

200

150

(A)

C

I

100

40

35

30

= 600 V

V

CC

I

= 100 A

C

VGE = ± 15 V

= 125 °C

T

J

25

(mJ)

off

, E

on

E

20

15

E

on

E

off

10

5

0

06010 20 30 40 50

Rg (Ω)

C

Module

Fig. 4 - IGBT Switching Loss vs. R

Chip

g

10

10

10

- Thermal Impedance (K/W)

thJC

Z

10

Revision: 20-Sep-12

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R

= 5.6 Ω

g

50

VGE = ± 15 V

=

125 °C

T

J

0

0

350

700 1050 1400

VCE (V)

Fig. 5 - RBSOA

0

IGBT

-1

-2

-3

-5

10

-4

10

-3

10

-2

10

t (s)

Fig. 6 - IGBT Transient Thermal Impedance

4

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10

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I

F

(A)

VF (V)

0 3.01.0 2.0

0

50

25

150

100

200

75

175

125

TJ = 125 °C

TJ = 25 °C

2.50.5 1.5

E (mJ)

Rg (Ω)

06010 20 30 40 50

0

1

2

3

5

4

6

7

8

VGE = ± 15 V

T

J

= 125 °C

V

CC

= 600 V

I

F

= 100 A

E

rec

t (s)

Z

thJC

- Thermal Impedance (K/W)

10

0

10

-1

10

-2

10

-3

10

1

10

-0

10

-1

10

-2

10

-3

DIODE

12

10

8

V

= 600 V

CC

R

= 5.6 Ω

g

VGE = ± 15 V

= 125 °C

T

J

VS-GB100TH120U

Vishay Semiconductors

E (mJ)

6

E

rec

4

2

0

0

50

100 150 200

IF (V)

Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I

F

Revision: 20-Sep-12

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 9 - Diode Switching Loss vs. R

Fig. 10 - Diode Transient Thermal Impedance

g

5

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CIRCUIT CONFIGURATION

VS-GB100TH120U

Vishay Semiconductors

6
7

1

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95525

2

3

5
4

Revision: 20-Sep-12

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Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

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Document Number: 91000