C&H Technology VS-GB100TH120N User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

Double INT-A-PAK

2-in-1 Package, 1200 V and 100 A

Molding Type Module IGBT,

FEATURES

•Low V

• 10 μs short circuit capability

•V

CE(on)

• Maximum junction temperature 150 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

SPT + IGBT technology

CE(on)

with positive temperature coefficient

VS-GB100TH120N

Vishay Semiconductors

PRODUCT SUMMARY

V

CES

at TC = 80 °C 100 A

I

C

(typical)

V

CE(on)

at I

= 100 A, 25 °C

C

1200 V

1.90 V

• Inverter for motor drive

• AC and DC servo drive amplifier

• Uninterruptible power supply (UPS)

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

TYPICAL APPLICATIONS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 200

= 80 °C 100

T

C

(1)

D

tp = 1 ms 200

TC = 80 °C 100

tp = 1 ms 200

TJ = 150 °C 833 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

1200

± 20

V

A

Revision: 26-Mar-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

1

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 94752

VS-GB100TH120N

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.9 2.35

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

= 15 V, IC = 100 A, TJ = 125 °C - 2.1 -

V

GE

VCE = VGE, IC = 4.0 mA, TJ = 25 °C 5.0 6.2 7.0

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 5.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Internal gate resistance R

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

GINT

CE

CC’+EE’

VCC = 600 V, IC = 100 A, Rg = 5.6 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 100 A, Rg = 5.6 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 25 V, f = 1.0 MHz

tsc  10 μs, VGE = 15 V, TJ = 125 °C,

= 900 V, V

V

CC

CEM

 1200 V

TC = 25 °C - 0.35 - m

Vishay Semiconductors

VCollector to emitter voltage V

- 279 -

-61-

- 308 -

- 205 -

-5.56-

-6.95-

- 287 -

-63-

- 328 -

- 360 -

-7.85-

- 10.55 -

-8.58-

-0.60-

-0.40-

- 600 - A

-5.0- 

- - 20 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.82 2.22

T

Diode forward voltage V

Diode reverse recovery charge Q

F

rr

IF = 100 A

IF = 100 A, VR = 600 V,

Diode peak reverse recovery current I

Diode reverse recovery energy E

rr

rec

Revision: 26-Mar-13

For technical questions within your region: [e-mail]

dI/dt = - 2000 A/μs,

= - 15 V

V

GE

2

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 1.95 -

J

= 25 °C - 5.5 -

T

J

T

= 125 °C - 11.9 -

J

TJ = 25 °C - 85 -

T

= 125 °C - 103 -

J

TJ = 25 °C - 2.07 -

T

= 125 °C - 5.56 -

J

Document Number: 94752

V

μC

A

mJ