C&H Technology VS-GA75TP60S User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

INT-A-PAK

Molding Type Module IGBT,

2 in1 Package 600 V, 75 A

FEATURES

•Low V

• 10 μs short circuit capability

•V

CE(on)

• Rugged with ultrafast performance

•Square RBSOA

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

trench NPT IGBT technology

CE(on)

with positive temperature coefficient

VS-GA75TP60S

Vishay Semiconductors

PRODUCT SUMMARY

V

CES

at TC = 80 °C 75 A

I

C

(typical)

V

CE(on)

at I

= 75 A, 25 °C

C

600 V

1.95 V

TYPICAL APPLICATIONS

• UPS (Uninterruptable Power Supply)

• Electronic welders

• SMPS (Switching mode power supplies)

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 110

= 80 °C 75

T

C

(1)

D

tp = 1 ms 150

tp = 1 ms 150

TJ = 150 °C 297 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

600

± 20

75

V

A

Revision: 04-Mar-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 94810

VS-GA75TP60S

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 600 - -

VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.95 2.40

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

V

= 15 V, IC = 75 A, TJ = 125 °C - 2.25 -

GE

VCE = VGE, IC = 250 μA, TJ = 25 °C 3.5 4.5 5.5

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 1.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 300 V, IC = 75 A, Rg = 18 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 300 V, IC = 75 A, Rg = 18 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz

tp  10 μs, VGE = 15 V, TJ = 125 °C,
V

= 360 V, V

CC

CEM

 600 V

TC = 25 °C - 0.75 - m

Vishay Semiconductors

VCollector to emitter voltage V

- 217 -

-72-

- 230 -

-88-

-1.69-

-1.33-

- 213 -

-72-

- 236 -

- 103 -

-1.79-

-1.80-

-4.30-

-0.35-

-0.16-

-TBD- A

- - 30 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.50 1.90

T

Forward voltage V

Reverse recovery charge Q

F

rr

IF = 75 A

IF = 75 A, VR = 300 V,
dI

Peak reverse recovery current I

Reverse recovery energy E

rr

rec

Revision: 04-Mar-13

For technical questions within your region: [e-mail]

/dt = 1200 A/μs

F

V

= - 15 V

GE

2

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 1.55 -

J

= 25 °C - 3.2 -

T

J

T

= 125 °C - 4.2 -

J

TJ = 25 °C - 49 -

T

= 125 °C - 51 -

J

TJ = 25 °C - 0.76 -

T

= 125 °C - 0.96 -

J

Document Number: 94810

V

μC

A

mJ