C&H Technology VS-GA75TP60S User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

INT-A-PAK

Molding Type Module IGBT,

2 in1 Package 600 V, 75 A

FEATURES

•Low V

• 10 μs short circuit capability

•V

CE(on)

• Rugged with ultrafast performance

•Square RBSOA

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

trench NPT IGBT technology

CE(on)

with positive temperature coefficient

VS-GA75TP60S

Vishay Semiconductors

PRODUCT SUMMARY

V

CES

at TC = 80 °C 75 A

I

C

(typical)

V

CE(on)

at I

= 75 A, 25 °C

C

600 V

1.95 V

TYPICAL APPLICATIONS

• UPS (Uninterruptable Power Supply)

• Electronic welders

• SMPS (Switching mode power supplies)

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 110

= 80 °C 75

T

C

(1)

D

tp = 1 ms 150

tp = 1 ms 150

TJ = 150 °C 297 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

600

± 20

75

V

A

Revision: 04-Mar-13

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 94810

VS-GA75TP60S

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IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 600 - -

VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.95 2.40

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

V

= 15 V, IC = 75 A, TJ = 125 °C - 2.25 -

GE

VCE = VGE, IC = 250 μA, TJ = 25 °C 3.5 4.5 5.5

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 1.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 300 V, IC = 75 A, Rg = 18 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 300 V, IC = 75 A, Rg = 18 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz

tp  10 μs, VGE = 15 V, TJ = 125 °C,
V

= 360 V, V

CC

CEM

 600 V

TC = 25 °C - 0.75 - m

Vishay Semiconductors

VCollector to emitter voltage V

- 217 -

-72-

- 230 -

-88-

-1.69-

-1.33-

- 213 -

-72-

- 236 -

- 103 -

-1.79-

-1.80-

-4.30-

-0.35-

-0.16-

-TBD- A

- - 30 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.50 1.90

T

Forward voltage V

Reverse recovery charge Q

F

rr

IF = 75 A

IF = 75 A, VR = 300 V,
dI

Peak reverse recovery current I

Reverse recovery energy E

rr

rec

Revision: 04-Mar-13

For technical questions within your region: [e-mail]

/dt = 1200 A/μs

F

V

= - 15 V

GE

2

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 1.55 -

J

= 25 °C - 3.2 -

T

J

T

= 125 °C - 4.2 -

J

TJ = 25 °C - 49 -

T

= 125 °C - 51 -

J

TJ = 25 °C - 0.76 -

T

= 125 °C - 0.96 -

J

Document Number: 94810

V

μC

A

mJ

VS-GA75TP60S

0

25

50

75

100

125

150

012 31.5 2.5 43.50.5

25 °C

125 °C

VGE = 15 V

VCE (V)

I

C

(A)

0

25

50

75

100

125

150

46 810795

25 °C

125 °C

VCE = 20 V

VGE (V)

I

C

(A)

020 6040 80 100

0

8

4

2

6

10

12

E

on

, E

off

(mJ)

Rg (Ω)

VGE = ± 15 V

T

J

= 125 °C

I

C

= 75 A

V

CC

= 300 V

E

on

E

off

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction temperature T

Storage temperature range T

Junction to case

IGBT

Case to sink (Conductive grease applied) R

Mounting torque

Weight Weight of module - 150 - g

J

Stg

R

thJC

thCS

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 5.0

6

V

= 300 V

CC

R

= 18 Ω

g

5

VGE = ± 15 V

= 125 °C

T

J

4

(mJ)

3

off

, E

on

2

E

Vishay Semiconductors

- - 150 °C

- 40 - 125 °C

- - 0.42

K/WDiode - - 1.04

-0.05-

Nm

E

on

E

off

Fig. 1 - IGBT Typical Output Characteristics

Revision: 04-Mar-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 2 - IGBT Typical Transfer Characteristics

For technical questions within your region: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

0

025 7550 100 125 150

IC (A)

Fig. 3 - IGBT Switching Loss vs. I

Fig. 4 - IGBT Switching Loss vs. R

3

Document Number: 94810

C

G

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0

0

25

50

75

100

125

150

0.4 1.20.8 1.6 2

25 °C

125 °C

VF (V)

I

C

(A)

0

10

(A)

C

I

160

140

120

100

80

60

40

R

= 18 Ω

g

VGE = ± 15 V

20

= 125 °C

T

J

0

0 200 600400 800

Module

VCE (V)

Fig. 5 - RBSOA

VS-GA75TP60S

Vishay Semiconductors

Revision: 04-Mar-13

IGBT

-1

10

(K/W)

thJC

Z

-2

10

-3

10

-2

10

-1

10

0

10

1

10

t (s)

Fig. 6 - IGBT Transient Thermal Impedance

1.8

1.6

1.4

1.2

1.0

0.8

E (mJ)

0.6

0.4

0.2

0

0 25 50 75 100 125 150

Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I

4

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

E

IF (A)

rec

V

= 300 V

CC

R

= 18 Ω

g

VGE = - 15 V

= 125 °C

T

J

F

Document Number: 94810

www.vishay.com

Rg (Ω)

E (mJ)

0

0.2

0.4

0.6

0.8

1.0

1.2

020406080100

VGE = - 15 V

T

J

= 125 °C

I

C

= 75 A

V

CC

= 300 V

E

rec

Z

thJC

(K/W)

t (s)

Diode

10

-1

10

0

10

-2

10

0

10

1

10

-1

10

-2

10

-3

1

6
7

3

2

5
4

VS-GA75TP60S

Vishay Semiconductors

CIRCUIT CONFIGURATION

Fig. 9 - Diode Switching Loss vs. R

G

Fig. 10 - Diode Transient Thermal Impedance

Dimensions www.vishay.com/doc?95524

Revision: 04-Mar-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

LINKS TO RELATED DOCUMENTS

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Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000