• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
trench NPT IGBT technology
CE(on)
with positive temperature coefficient
VS-GA75TP60S
Vishay Semiconductors
PRODUCT SUMMARY
V
CES
at TC = 80 °C75 A
I
C
(typical)
V
CE(on)
at I
= 75 A, 25 °C
C
600 V
1.95 V
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• SMPS (Switching mode power supplies)
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETERSYMBOLTEST CONDITIONSMAX. UNITS
Collector to emitter voltageV
Gate to emitter voltageV
Collector currentI
Pulsed collector currentI
Diode continuous forward currentI
Diode maximum forward currentI
Maximum power dissipationP
Short circuit withstand timet
RMS isolation voltageV
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
CM
CES
GES
C
F
FM
SC
ISOL
TC = 25 °C110
= 80 °C75
T
C
(1)
D
tp = 1 ms150
tp = 1 ms150
TJ = 150 °C 297W
TJ = 125 °C10μs
f = 50 Hz, t = 1 min2500V
600
± 20
75
V
A
Revision: 04-Mar-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94810
VS-GA75TP60S
www.vishay.com
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETERSYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltageV
(BR)CES
TJ = 25 °C600--
VGE = 15 V, IC = 75 A, TJ = 25 °C-1.952.40
Gate to emitter threshold voltageV
Collector cut-off currentI
Gate to emitter leakage currentI
CE(on)
GE(th)
CES
GES
V
= 15 V, IC = 75 A, TJ = 125 °C-2.25-
GE
VCE = VGE, IC = 250 μA, TJ = 25 °C3.54.55.5
VCE = V
VGE = V
, VGE = 0 V, TJ = 25 °C--1.0mA
CES
, VCE = 0 V, TJ = 25 °C--400nA
GES
SWITCHING CHARACTERISTICS
PARAMETERSYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay timet
Rise timet
Turn-off delay timet
Fall timet
Turn-on switching lossE
Turn-off switching lossE
Turn-on delay timet
Rise timet
Turn-off delay timet
Fall timet
Turn-on switching lossE
Turn-off switching lossE
Input capacitanceC
Reverse transfer capacitanceC
SC dataI
Stray inductanceL
Module lead resistance, terminal to chipR
d(on)
r
d(off)
f
on
off
d(on)
r
d(off)
f
on
off
ies
oes
res
SC
CE
CC’+EE’
VCC = 300 V, IC = 75 A, Rg = 18 ,
V
= ± 15 V, TJ = 25 °C
GE
VCC = 300 V, IC = 75 A, Rg = 18 ,
V
= ± 15 V, TJ = 125 °C
GE
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp 10 μs, VGE = 15 V, TJ = 125 °C,
V
= 360 V, V
CC
CEM
600 V
TC = 25 °C-0.75-m
Vishay Semiconductors
VCollector to emitter voltageV
-217-
-72-
-230-
-88-
-1.69-
-1.33-
-213-
-72-
-236-
-103-
-1.79-
-1.80-
-4.30-
-0.35-
-0.16-
-TBD- A
--30nH
ns
mJ
ns
mJ
nFOutput capacitanceC
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX. UNITS
= 25 °C-1.501.90
T
Forward voltageV
Reverse recovery chargeQ
F
rr
IF = 75 A
IF = 75 A, VR = 300 V,
dI
Peak reverse recovery currentI
Reverse recovery energyE
rr
rec
Revision: 04-Mar-13
For technical questions within your region: DiodesAmericas@vishay.com
/dt = 1200 A/μs
F
V
= - 15 V
GE
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
J
T
= 125 °C-1.55-
J
= 25 °C-3.2-
T
J
T
= 125 °C-4.2-
J
TJ = 25 °C-49-
T
= 125 °C-51-
J
TJ = 25 °C-0.76-
T
= 125 °C-0.96-
J
Document Number: 94810
V
μC
A
mJ
VS-GA75TP60S
0
25
50
75
100
125
150
012 31.52.543.50.5
25 °C
125 °C
VGE = 15 V
VCE (V)
I
C
(A)
0
25
50
75
100
125
150
46 810795
25 °C
125 °C
VCE = 20 V
VGE (V)
I
C
(A)
020604080100
0
8
4
2
6
10
12
E
on
, E
off
(mJ)
Rg (Ω)
VGE = ± 15 V
T
J
= 125 °C
I
C
= 75 A
V
CC
= 300 V
E
on
E
off
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX. UNITS
Maximum junction temperatureT
Storage temperature rangeT
Junction to case
IGBT
Case to sink (Conductive grease applied)R
Mounting torque
WeightWeight of module-150-g
J
Stg
R
thJC
thCS
Power terminal screw: M52.5 to 5.0
Mounting screw: M63.0 to 5.0
6
V
= 300 V
CC
R
= 18 Ω
g
5
VGE = ± 15 V
= 125 °C
T
J
4
(mJ)
3
off
, E
on
2
E
Vishay Semiconductors
--150°C
- 40 -125°C
--0.42
K/WDiode--1.04
-0.05-
Nm
E
on
E
off
Fig. 1 - IGBT Typical Output Characteristics
Revision: 04-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 2 - IGBT Typical Transfer Characteristics
For technical questions within your region: DiodesAmericas@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
0
0257550100125150
IC (A)
Fig. 3 - IGBT Switching Loss vs. I
Fig. 4 - IGBT Switching Loss vs. R
3
Document Number: 94810
C
G
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
0
0
25
50
75
100
125
150
0.41.20.81.62
25 °C
125 °C
VF (V)
I
C
(A)
0
10
(A)
C
I
160
140
120
100
80
60
40
R
= 18 Ω
g
VGE = ± 15 V
20
= 125 °C
T
J
0
0200600400800
Module
VCE (V)
Fig. 5 - RBSOA
VS-GA75TP60S
Vishay Semiconductors
Revision: 04-Mar-13
IGBT
-1
10
(K/W)
thJC
Z
-2
10
-3
10
-2
10
-1
10
0
10
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
1.8
1.6
1.4
1.2
1.0
0.8
E (mJ)
0.6
0.4
0.2
0
0255075100125150
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
4
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
E
IF (A)
rec
V
= 300 V
CC
R
= 18 Ω
g
VGE = - 15 V
= 125 °C
T
J
F
Document Number: 94810
www.vishay.com
Rg (Ω)
E (mJ)
0
0.2
0.4
0.6
0.8
1.0
1.2
020406080100
VGE = - 15 V
T
J
= 125 °C
I
C
= 75 A
V
CC
= 300 V
E
rec
Z
thJC
(K/W)
t (s)
Diode
10
-1
10
0
10
-2
10
0
10
1
10
-1
10
-2
10
-3
1
6
7
3
2
5
4
VS-GA75TP60S
Vishay Semiconductors
CIRCUIT CONFIGURATION
Fig. 9 - Diode Switching Loss vs. R
G
Fig. 10 - Diode Transient Thermal Impedance
Dimensionswww.vishay.com/doc?95524
Revision: 04-Mar-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LINKS TO RELATED DOCUMENTS
5
Document Number: 94810
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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