C&H Technology VS-GA400TD60S User Manual

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Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 400 A

Dual INT-A-PAK Low Profile

GA400TD60S

Vishay Semiconductors

FEATURES

• Generation 4 IGBT technology

• Standard: Optimized for hard switching speed
DC to 1 kHz

•Low V

• Square RBSOA

•HEXFRED

• Industry standard package

•Al

• UL approved file E78996

• Compliant to RoHS Directive 2002/95/EC

• Designed for industrial level

CE(on)

®

antiparallel diode with ultrasoft reverse

recovery characteristics

DBC

2O3

PRODUCT SUMMARY

V

CES

DC at TC = 25 °C 750 A

I

C

(typical) at 400 A, 25 °C 1.24 V

V

CE(on)

600 V

• Increased operating efficiency

• Performance optimized as output inverter stage for TIG
welding machines

• Direct mounting on heatsink

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

BENEFITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Maximum power dissipation (IGBT) P

RMS isolation voltage V

Note

(1)

Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals

CES

C

CM

LM

ISOL

F

GE

(1)

D

TC = 25 °C 750

= 80 °C 525

T

C

TC = 25 °C 219

= 80 °C 145

T

C

TC = 25 °C 1563

T

= 80 °C 875

C

Any terminal to case
(V

t = 1 s, TJ = 25 °C)

RMS

600 V

1000

1000

± 20 V

3500 V

A

W

Document Number: 93363 For technical questions, contact: [e-mail]
Revision: 31-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

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www.vishay.com

GA400TD60S

Vishay Semiconductors

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 400 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Collector to emitter leakage current I

Diode forward voltage drop V

Gate to emitter leakage current I

BR(CES)VGE

CE(on)

GE(th)

CES

FM

GES

= 0 V, IC = 500 μA 600 - -

VGE = 15 V, IC = 300 A - 1.14 1.35

= 15 V, IC = 400 A - 1.24 1.52

V

GE

= 15 V, IC = 300 A, TJ = 125 °C - 1.08 1.29

V

GE

= 15 V, IC = 400 A, TJ = 125 °C - 1.21 1.5

V

GE

VCE = VGE, IC = 250 μA 3.0 4.6 6.3

VGE = 0 V, VCE = 600 V - 0.075 1

V

= 0 V, VCE = 600 V, TJ = 125 °C - 1.8 10

GE

IFM = 300 A - 1.48 1.75

= 400 A - 1.63 1.98

I

FM

= 300 A, TJ = 125 °C - 1.50 1.77

I

FM

= 400 A, TJ = 125 °C - 1.70 2.04

I

FM

VGE = ± 20 V - - ± 200 nA

VCollector to emitter voltage V

mA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

on

off

tot

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

IC = 400 A, VCC = 360 V, VGE = 15 V,

= 1.5 , L = 500 μH, TJ = 25 °C

R

g

IC = 400 A, VCC = 360 V, VGE = 15 V,
R

= 1.5 , L = 500 μH, TJ = 125 °C

g

= 150 °C, IC = 1000 A, VCC = 400 V,

T

J

V

= 600 V, Rg = 22 VGE = 15 V to 0 V,

P

L = 500 μH

IF = 300 A, dIF/dt = 500 A/μs,
V

= 400 V, TJ = 25 °C

CC

IF = 300 A, dIF/dt = 500 A/μs,

= 400 V, TJ = 125 °C

V

CC

-8.5-

- 113 -

- 121.5 -

-21-

mJ

- 163 -

- 184 -

- 532 -

- 377 -

- 496 -

ns

- 1303 -

Fullsquare

- 150 179 ns

-4359A

-3.96.3μC

- 236 265 ns

-6480A

- 8.6 11.1 μC

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Document Number: 93363

2 Revision: 31-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

GA400TD60S

I

C

(A)

VCE (V)

0.25 0.50 1.00 1.50 2.001.250.75 1.75

93363_02

0

800

200

100

400

300

600

500

700

VGE = 9 V

VGE = 12 V
V

GE

= 15 V

V

GE

= 18 V

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

300100

800500

400200

600 700

0

100

160

0

40

60

140

80

120

20

93363_03

DC

Dual INT-A-PAK Low Profile "Half-Bridge"

Vishay Semiconductors

(Standard Speed IGBT), 400 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Operating junction and storage temperature range T

Junction to case per leg

IGBT

Case to sink per module R

Mounting torque

case to heatsink: M6 screw 4 - 6

case to terminal 1, 2, 3: M5 screw 2 - 4

, T

J

Stg

R

thJC

thCS

Weight - 270 - g

800

700

600

500

400

(A)

C

I

300

200

100

0

0.25 0.50 1.00 1.50 2.000.75 1.25 1.75

93363_01

TJ = 125 °C

TJ = 25 °C

VCE (V)

Fig. 1 - Typical Output Characteristics,

T

= 25 °C, VGE = 15 V

J

- 40 - 150 °C

- - 0.08

-0.05-

Fig. 3 - Maximum DC IGBT Collector Current vs.

Case Temperature

°C/WDiode - - 0.4

Nm

Document Number: 93363 For technical questions, contact: [e-mail]
Revision: 31-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics,

T

= 125 °C

J

1.7

1.6

(V)

CE

V

93363_04

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

100 A

20 40 80 120 16060 100 140

600 A

400 A

300 A

TJ (°C)

Fig. 4 - Typical IGBT Collector to Emitter Voltage vs.

Junction Temperature,

V

= 15 V

GE

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GA400TD60S

I

C

(A)

VGE (V)

3945 768

0

100

200

400

300

600

500

700

93363_05

800

TJ = 25 °C

TJ = 125 °C

VCE = 20 V

V

geth

(V)

IC (mA)

0.4 1.00.5 0.6 0.80.7 0.9

2.0

2.5

3.0

4.0

3.5

4.5

93363_06

5.0
TJ = 25 °C

TJ = 125 °C

I

C

(A)

VCE (V)

1 10 100 1000

1

93363_07

10 000

10

100

1000

Vishay Semiconductors

Fig. 5 - Typical IGBT Transfer Characteristics

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 400 A

10

TJ = 125 °C

1

0.1

(mA)

CES

I

0.01

0.001
100 600200 300 400 500

93363_08

Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current

600

500

400

V

CES

TJ = 25 °C

(V)

TJ = 125 °C

300

(A)

F

I

200

100

0

02.50.5 1.0 1.5 2.0

93363_09

Fig. 6 - Typical IGBT Gate Threshold Voltage

93363_10

Fig. 7 - IGBT Reverse Bias SOA,

T

= 150 °C, VGE = 15 V, Rg = 22 

J

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Fig. 9 - Typical Diode Forward Characteristics

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

IF - Continuous Forward Current (A)

Fig. 10 - Maximum DC Forward Current vs. Case Temperature

TJ = 25 °C

VFM (V)

DC

1601208040 200

Document Number: 93363

www.vishay.com/doc?91000

240

GA400TD60S

Energy (mJ)

IC (A)

0 100 200 400300

0

93363_11

175

150

100

125

50

75

25

E

on

E

off

Switching Time (ns)

IC (A)

0 100 200 400300

10

93363_12

10 000

100

1000

t

d(off)

t

d(on)

t

r

t

f

Switching Time (ns)

Rg (Ω)

0 5 15 2010 25

100

93363_14

10 000

1000

t

d(off)

t

d(on)

t

f

t

r

I

rr

(A)

dIF/dt (A/µs)

100 200 400 600 800 1000300 500 700 900

10

130

90

110

120

30

50

70

80

100

20

40

60

93363_16

TJ = 25 °C

TJ = 125 °C

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 400 A

Fig. 11 - Typical IGBT Energy Loss vs. IC,

T

= 125 °C, VCC = 360 V, Rg = 1.5 ,

J

V

= 15 V, L = 500 μH

GE

Fig. 12 - Typical IGBT Switching Time vs. I

T

= 125 °C, VCC = 360 V, Rg = 1.5 ,

J

V

= 15 V, L = 500 μH

GE

Vishay Semiconductors

Fig. 14 - Typical IGBT Switching Time vs. R

T

= 125 °C, IC = 400 A, VCC = 360 V,

J

V

= 15 V, L = 500 μH

GE

300

280

260

240

220

200

(ns)

rr

t

180

160

140

120

100

100 200 400 600 800 1000300 500 700 900

93363_15

,

C

Fig. 15 - Typical Reverse Recovery Time vs. dI

V

= 400 V, IF = 300 A

CC

TJ = 125 °C

TJ = 25 °C

dIF/dt (A/μs)

g

F

,

/dt,

175

150

125

100

75

Energy (mJ)

50

25

0

0 5 10 2015 25

93363_13

Fig. 13 - Typical IGBT Energy Loss vs. R

T

= 125 °C, IC = 400 A, VCC = 360 V,

J

Document Number: 93363 For technical questions, contact: [e-mail]
Revision: 31-May-11 5

V

= 15 V, L = 500 μH

GE

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

E

off

E

on

Rg (Ω)

,

g

Fig. 16 - Typical Reverse Recovery Current vs. dI

This document is subject to change without notice.

V

= 400 V, IF = 300 A

CC

/dt,

F

www.vishay.com

www.vishay.com/doc?91000

GA400TD60S

0.0001

0.001

0.01

0.1

1

0.00001

93363_18

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

10

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

0.001

0.01

0.1

1

0.00001

93363_19

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

10

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

Vishay Semiconductors

93363_17

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 400 A

22

20

18

16

14

12

(μC)

rr

10

Q

8

6

4

2

0

100 200 400 600 800 1000300 500 700 900

Fig. 17 - Typical Reverse Recovery Charge vs. dIF/dt,

TJ = 125 °C

dIF/dt (A/μs)

V

= 400 V, IF = 300 A

CC

TJ = 25 °C

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Fig. 18 - Maximum Thermal Impedance Z

Fig. 19 - Maximum Thermal Impedance Z

This document is subject to change without notice.

thJC

thJC

Characteristics (IGBT)

Characteristics (Diode)

Document Number: 93363

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GA400TD60S

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - A = Generation 4 IGBT

3 - Current rating (400 = 400 A)

4 - Circuit configuration (T = Half-bridge)

5 - Package indicator (D = Dual INT-A-PAK Low Profile)

6 - Voltage rating (60 = 600 V)

7 - Speed/type (S = Standard Speed IGBT)

Device code

51 32 4 6 7

G A 400 T D 60 S

4

5

1

6

7

3

2

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 400 A

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95435

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000