C&H Technology VS-GA400TD60S User Manual
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Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 400 A
Dual INT-A-PAK Low Profile
GA400TD60S
Vishay Semiconductors
FEATURES
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed
DC to 1 kHz
•Low V
• Square RBSOA
•HEXFRED
• Industry standard package
•Al
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed for industrial level
CE(on)
®
antiparallel diode with ultrasoft reverse
recovery characteristics
DBC
2O3
PRODUCT SUMMARY
V
CES
DC at TC = 25 °C 750 A
I
C
(typical) at 400 A, 25 °C 1.24 V
V
CE(on)
600 V
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
BENEFITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Gate to emitter voltage V
Maximum power dissipation (IGBT) P
RMS isolation voltage V
Note
(1)
Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
CES
C
CM
LM
ISOL
F
GE
(1)
D
TC = 25 °C 750
= 80 °C 525
T
C
TC = 25 °C 219
= 80 °C 145
T
C
TC = 25 °C 1563
T
= 80 °C 875
C
Any terminal to case
(V
t = 1 s, TJ = 25 °C)
RMS
600 V
1000
1000
± 20 V
3500 V
A
W
Document Number: 93363 For technical questions, contact: indmodules@vishay.com
Revision: 31-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
www.vishay.com
GA400TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 400 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Collector to emitter leakage current I
Diode forward voltage drop V
Gate to emitter leakage current I
BR(CES)VGE
CE(on)
GE(th)
CES
FM
GES
= 0 V, IC = 500 μA 600 - -
VGE = 15 V, IC = 300 A - 1.14 1.35
= 15 V, IC = 400 A - 1.24 1.52
V
GE
= 15 V, IC = 300 A, TJ = 125 °C - 1.08 1.29
V
GE
= 15 V, IC = 400 A, TJ = 125 °C - 1.21 1.5
V
GE
VCE = VGE, IC = 250 μA 3.0 4.6 6.3
VGE = 0 V, VCE = 600 V - 0.075 1
V
= 0 V, VCE = 600 V, TJ = 125 °C - 1.8 10
GE
IFM = 300 A - 1.48 1.75
= 400 A - 1.63 1.98
I
FM
= 300 A, TJ = 125 °C - 1.50 1.77
I
FM
= 400 A, TJ = 125 °C - 1.70 2.04
I
FM
VGE = ± 20 V - - ± 200 nA
VCollector to emitter voltage V
mA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
on
off
tot
on
off
tot
d(on)
r
d(off)
f
Reverse bias safe operating area RBSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
rr
rr
rr
rr
rr
rr
IC = 400 A, VCC = 360 V, VGE = 15 V,
= 1.5 , L = 500 μH, TJ = 25 °C
R
g
IC = 400 A, VCC = 360 V, VGE = 15 V,
R
= 1.5 , L = 500 μH, TJ = 125 °C
g
= 150 °C, IC = 1000 A, VCC = 400 V,
T
J
V
= 600 V, Rg = 22 VGE = 15 V to 0 V,
P
L = 500 μH
IF = 300 A, dIF/dt = 500 A/μs,
V
= 400 V, TJ = 25 °C
CC
IF = 300 A, dIF/dt = 500 A/μs,
= 400 V, TJ = 125 °C
V
CC
-8.5-
- 113 -
- 121.5 -
-21-
mJ
- 163 -
- 184 -
- 532 -
- 377 -
- 496 -
ns
- 1303 -
Fullsquare
- 150 179 ns
-4359A
-3.96.3μC
- 236 265 ns
-6480A
- 8.6 11.1 μC
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 93363
2 Revision: 31-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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