C&H Technology VS-GA300TD60S User Manual

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Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 300 A

Dual INT-A-PAK Low Profile

GA300TD60S

Vishay Semiconductors

FEATURES

• Generation 4 IGBT technology

• Standard: Optimized for hard switching speed
DC to 1 kHz

•Low V

• Square RBSOA

•HEXFRED

• Industry standard package

•Al

• UL approved file E78996

• Compliant to RoHS Directive 2002/95/EC

• Designed for industrial level

CE(on)

®

antiparallel diode with ultrasoft reverse

recovery characteristics

DBC

2O3

PRODUCT SUMMARY

V

CES

DC at TC = 25 °C 530 A

I

C

(typical) at 300 A, 25 °C 1.24 V

V

CE(on)

600 V

BENEFITS

• Increased operating efficiency

• Performance optimized as output inverter stage for TIG
welding machines

• Direct mounting on heatsink

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Maximum power dissipation (IGBT) P

RMS isolation voltage V

Note

(1)

Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals

CES

C

CM

LM

ISOL

F

GE

(1)

D

TC = 25 °C 530

= 80 °C 376

T

C

TC = 25 °C 219

= 80 °C 145

T

C

TC = 25 °C 1136

T

= 80 °C 636

C

Any terminal to case
(V

t = 1 s, TJ = 25 °C)

RMS

600 V

800

800

± 20 V

3500 V

A

W

Document Number: 93362 For technical questions, contact: [e-mail]
Revision: 31-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

www.vishay.com

GA300TD60S

Vishay Semiconductors

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 300 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Collector to emitter leakage current I

Diode forward voltage drop V

Gate to emitter leakage current I

BR(CES)VGE

CE(on)

GE(th)

CES

FM

GES

= 0 V, IC = 500 μA 600 - -

VGE = 15 V, IC = 150 A - 1.04 1.15

= 15 V, IC = 300 A - 1.24 1.45

V

GE

= 15 V, IC = 150 A, TJ = 125 °C - 0.96 1.06

V

GE

= 15 V, IC = 300 A, TJ = 125 °C - 1.22 1.42

V

GE

VCE = VGE, IC = 250 μA 2.9 4.8 6.3

VGE = 0 V, VCE = 600 V - 0.02 0.75

V

= 0 V, VCE = 600 V, TJ = 125 °C - 1.5 10

GE

IFM = 150 A - 1.23 1.39

= 300 A - 1.48 1.75

I

FM

= 150 A, TJ = 125 °C - 1.17 1.33

I

FM

= 300 A, TJ = 125 °C - 1.50 1.77

I

FM

VGE = ± 20 V - - ± 200 nA

VCollector to emitter voltage V

mA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

on

off

tot

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

IC = 300 A, VCC = 360 V, VGE = 15 V,

= 1.5 , L = 500 μH, TJ = 25 °C

R

g

IC = 300 A, VCC = 360 V, VGE = 15 V,
R

= 1.5 , L = 500 μH, TJ = 125 °C

g

= 150 °C, IC = 800 A, VCC = 400 V

T

J

V

= 600 V, Rg = 22 VGE = 15 V to 0 V,

P

L = 500 μH

IF = 300 A, dIF/dt = 500 A/μs,
V

= 400 V, TJ = 25 °C

CC

IF = 300 A, dIF/dt = 500 A/μs,

= 400 V, TJ = 125 °C

V

CC

-9-

-90-

-99-

-23-

mJ

- 133 -

- 156 -

- 442 -

- 301 -

- 406 -

ns

- 1570 -

Fullsquare

- 150 179 ns

-4359A

-3.96.3μC

- 236 265 ns

-6480A

- 8.6 11.1 μC

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Document Number: 93362

2 Revision: 31-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

GA300TD60S

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

400300200100 500

600

0

100

160

0

40

60

140

80

120

20

93362_03

DC

Dual INT-A-PAK Low Profile "Half-Bridge"

Vishay Semiconductors

(Standard Speed IGBT), 300 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Operating junction and storage temperature range T

Junction to case per leg

IGBT

Case to sink per module R

Mounting torque

case to heatsink: M6 screw 4 - 6

case to terminal 1, 2, 3: M5 screw 2 - 4

, T

J

Stg

R

thJC

thCS

Weight - 270 - g

600

500

400

300

(A)

C

I

200

100

TJ = 125 °C

TJ = 25 °C

- 40 - 150 °C

- - 0.11

°C/WDiode - - 0.4

-0.05-

Nm

0

0.25 0.750.50 1.00 1.50 2.001.25 1.75

93362_01

Fig. 1 - Typical Output Characteristics,

600

500

400

300

(A)

C

I

200

100

0

93362_02

Document Number: 93362 For technical questions, contact: [e-mail]
Revision: 31-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

0.25 0.50 1.00 1.50 2.001.250.75 1.75 2.25

Fig. 2 - Typical Output Characteristics,

VCE (V)

T

= 25 °C, VGE = 15 V

J

VGE = 12 V

= 15 V

V

GE

= 18 V

V

GE

VCE (V)

T

= 125 °C

J

1.7

1.6

1.5

(V)

CE

V

93362_04

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

VGE = 9 V

Fig. 4 - Typical IGBT Collector to Emitter Voltage vs.

This document is subject to change without notice.

Fig. 3 - Maximum DC IGBT Collector Current vs.

Case Temperature

400 A

300 A

150 A

20 40 80 120 16060 100 140

TJ (°C)

Junction Temperature,

V

= 15 V

GE

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GA300TD60S

I

C

(A)

VGE (V)

41056 879

0

100

200

400

300

500

93362_05

600

TJ = 25 °C

TJ = 125 °C

VCE = 20 V

V

geth

(V)

IC (mA)

0.4 1.00.5 0.6 0.80.7 0.9

2.5

3.0

3.5

4.5

4.0

5.0

93362_06

5.5

TJ = 25 °C

TJ = 125 °C

I

C

(A)

VCE (V)

1 10 100 1000

1

93362_07

10 000

10

100

1000

Allowable Case Temperature (°C)

IF - Continuous Forward Current (A)

1601208040 200

240

0

100

160

0

40

60

140

80

120

20

93362_10

DC

Vishay Semiconductors

Fig. 5 - Typical IGBT Transfer Characteristics

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 300 A

10

1

0.1

(mA)

CES

I

0.01

0.001
100 600200 300 400 500

93362_08

Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current

600

500

400

TJ = 125 °C

V

CES

TJ = 25 °C

(V)

TJ = 125 °C

Fig. 6 - Typical IGBT Gate Threshold Voltage

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4 Revision: 31-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 7 - IGBT Reverse Bias SOA,

T

J

= 150 °C, VGE = 15 V, Rg = 22 

300

(A)

F

I

200

100

0

02.50.5 1.0 1.5 2.0

93362_09

Fig. 9 - Typical Diode Forward Characteristics

Fig. 10 - Maximum DC Forward Current vs. Case Temperature

This document is subject to change without notice.

TJ = 25 °C

VFM (V)

Document Number: 93362

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GA300TD60S

Energy (mJ)

IC (A)

0 50 100 200 250 300150 350

0

93362_11

150

100

125

50

75

25

E

on

E

off

Switching Time (ns)

IC (A)

0 50 250150100 300200 350

10

93362_12

10 000

100

1000

t

d(off)

t

d(on)

t

r

t

f

Switching Time (ns)

Rg (Ω)

0 5 15 2010 25

100

93362_14

10 000

1000

t

d(off)

t

d(on)

t

f

t

r

I

rr

(A)

dIF/dt (A/µs)

100 200 400 600 800 1000300 500 700 900

10

130

90

110

120

30

50

70

80

100

20

40

60

93362_16

TJ = 25 °C

TJ = 125 °C

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 300 A

Fig. 11 - Typical IGBT Energy Loss vs. IC,

T

= 125 °C, VCC = 360 V, Rg = 1.5 ,

J

V

= 15 V, L = 500 μH

GE

Fig. 12 - Typical IGBT Switching Time vs. I

T

= 125 °C, VCC = 360 V, Rg = 1.5 ,

J

V

= 15 V, L = 500 μH

GE

Vishay Semiconductors

Fig. 14 - Typical IGBT Switching Time vs. R

T

= 125 °C, IC = 300 A, VCC = 360 V,

J

V

= 15 V, L = 500 μH

GE

300

280

260

240

220

200

(ns)

rr

t

180

160

140

120

100

100 200 400 600 800 1000300 500 700 900

93362_15

,

C

Fig. 15 - Typical Reverse Recovery Time vs. dI

V

= 400 V, IF = 300 A

CC

TJ = 125 °C

TJ = 25 °C

dIF/dt (A/μs)

g

F

,

/dt,

150

125

100

75

Energy (mJ)

50

25

0

0 5 10 2015 25

93362_13

Fig. 13 - Typical IGBT Energy Loss vs. R

Document Number: 93362 For technical questions, contact: [e-mail]

T

= 125 °C, IC = 300 A, VCC = 360 V,

J

V

= 15 V, L = 500 μH

GE

Revision: 31-May-11 5

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

E

E

Rg (Ω)

off

on

,

g

Fig. 16 - Typical Reverse Recovery Current vs. dI

V

= 400 V, IF = 300 A

CC

F

/dt,

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This document is subject to change without notice.

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GA300TD60S

0.001

0.01

0.1

1

0.00001

93362_18

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

10

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

0.001

0.01

0.1

1

0.00001

93362_19

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

10

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

Vishay Semiconductors

93362_17

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 300 A

22

20

18

16

14

12

(μC)

rr

10

Q

8

6

4

2

0

100 200 400 600 800 1000300 500 700 900

Fig. 17 - Typical Reverse Recovery Charge vs. dIF/dt,

TJ = 125 °C

dIF/dt (A/μs)

V

= 400 V, IF = 300 A

CC

TJ = 25 °C

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 18 - Maximum Thermal Impedance Z

Fig. 19 - Maximum Thermal Impedance Z

This document is subject to change without notice.

thJC

thJC

Characteristics (IGBT)

Characteristics (Diode)

Document Number: 93362

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GA300TD60S

4

5

1

6

7

3

2

Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 300 A

ORDERING INFORMATION TABLE

Device code

CIRCUIT CONFIGURATION

G A 300 T D 60 S

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - A = Generation 4 IGBT

3 - Current rating (300 = 300 A)

4 - Circuit configuration (T = Half-bridge)

5 - Package indicator (D = Dual INT-A-PAK Low Profile)

6 - Voltage rating (60 = 600 V)

7 - Speed/type (S = Standard Speed IGBT)

Vishay Semiconductors

51 32 4 6 7

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95435

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Revision: 31-May-11 7

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Legal Disclaimer Notice

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

1

Document Number: 91000