C&H Technology VS-GA250SA60S User Manual

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Minnetonka, MN 55345

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

SOT-227

Insulated Gate Bipolar Transistor

VS-GA250SA60S

Vishay Semiconductors

Ultralow V

CE(on)

, 250 A

FEATURES

• Standard: Optimized for minimum saturation
voltage and low speed up to 5 kHz

• Lowest conduction losses available

• Fully isolated package (2500 V

AC

)

• Very low internal inductance (5 nH typical)

• Industry standard outline

• Designed and qualified for industrial level

• UL approved file E78996

• Material categorization: For definitions of compliance

PRODUCT SUMMARY

V

CES

(typical) at 200 A, 25 °C 1.33 V

V

CE(on)

I

at TC = 90 °C

C

Note

(1)

Maximum collector current admitted 100 A to do not exceed the
maximum temperature of terminals

(1)

600 V

250 A

please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped Inductive load current I

Gate to emitter voltage V

Power dissipation P

Isolation voltage V

Note

(1)

Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals

CES

C

CM

LM

ISOL

TC = 25 °C 400

(1)

GE

D

= 90 °C 250

T

C

Repetitive rating; VGE = 20 V, pulse width limited
by maximum junction temperature

VCC = 80 % (V
L = 10 μH, R

TC = 25 °C 961

T

= 90 °C 462

C

Any terminal to case, t = 1 minute 2500 V

), VGE = 20 V,

CES

= 2.0 ,

g

600 V

400

400

± 20 V

A

W

Revision: 20-Jul-12

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature T

Junction to case thermal resistance R

Case to sink thermal resistance, flat, greased surface R

Mounting torque, on terminals and heatsink T - - 1.3 Nm

Weight - 30 - g

Case style SOT-227

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, T

J

STG

thJC

thCS

- 40 - 150 °C

- - 0.13

-0.1 -

1

, [e-mail], [e-mail]

Document Number: 94704

°C/W

VS-GA250SA60S

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Emitter to collector breakdown voltage

Collector to emitter voltage V

Gate threshold voltage

Temperature coefficient of threshold voltage V

Collector to emitter leakage current I

Gate to emitter leakage current I

Notes

(1)

Pulse width  80 μs; duty factor  0.1 %

(BR)CES

V

(BR)ECS

CE(on)

V

GE(th)

GE(th)

CES

GES

VGE = 0 V, IC = 1 mA 600 - -

(1)

VGE = 0 V, IC = 1.0 A 18 - -

IC = 100 A

I

= 200 A - 1.33 1.66

C

I

= 100 A, TJ = 125 °C - 1.02 -

C

= 200 A, TJ = 125 °C - 1.32 -

I

C

I

= 100 A, TJ = 150 °C - 1.02 -

C

I

= 200 A, TJ = 150 °C - 1.33 -

C

V

GE

VCE = VGE, IC = 250 μA 3.0 4.5 6.0

V

= VGE, IC = 250 μA, TJ = 125 °C - 3.1 -

CE

/TJVCE = VGE, IC = 1 mA, 25 °C to 125 °C - - 12 - mV/°C

VGE = 0 V, VCE = 600 V - 20 1000 μA

V

= 0 V, VCE = 600 V, TJ = 125 °C - 0.2 -

GE

V

= 0 V, VCE = 600 V, TJ = 150 °C - 0.6 10

GE

VGE = ± 20 V - - ± 250 nA

Vishay Semiconductors

- 1.10 1.3

= 15 V

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate-to-collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

off

tot

d(on)

d(off)

on

off

tot

d(on)

d(off)

ies

oes

res

g

ge

gc

on

IC = 100 A, VCC = 600 V, VGE = 15 V

TJ = 25 °C
I

= 100 A

C

V

= 480 V

CC

V

= 15 V

GE

= 5.0 

r

f

R

g

L = 500 μH

Energy

losses
include tail
and diode

TJ = 125 °C
I

= 100 A

C

V

= 480 V

CC

V

= 15 V

GE

R

= 5.0 

r

f

E

g

L = 500 μH

Between lead and
center of die contact

recovery.

Diode used

60APH06

VGE = 0 V , VCC = 30 V, f = 1.0 MHz

- 770 1200

- 100 150

nCGate-to-emitter charge (turn-on) Q

- 260 380

-0.55-

-25-

mJTurn-off switching loss E

-25.5-

- 267 -

-42-

- 310 -

ns

- 450 -

-0.67-

-43.0-

mJTurn-off switching loss E

-43.7-

- 275 -

-50-

- 350 -

ns

- 700 -

-5.0- nH

- 16 250 -

- 1040 -

pFOutput capacitance C

- 190 -

Revision: 20-Jul-12

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 94704

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000