C&H Technology VS-GA250SA60S User Manual

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www.vishay.com

SOT-227

Insulated Gate Bipolar Transistor

VS-GA250SA60S

Vishay Semiconductors

Ultralow V

CE(on)

, 250 A

FEATURES

• Standard: Optimized for minimum saturation
voltage and low speed up to 5 kHz

• Lowest conduction losses available

• Fully isolated package (2500 V

AC

)

• Very low internal inductance (5 nH typical)

• Industry standard outline

• Designed and qualified for industrial level

• UL approved file E78996

• Material categorization: For definitions of compliance

PRODUCT SUMMARY

V

CES

(typical) at 200 A, 25 °C 1.33 V

V

CE(on)

I

at TC = 90 °C

C

Note

(1)

Maximum collector current admitted 100 A to do not exceed the
maximum temperature of terminals

(1)

600 V

250 A

please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped Inductive load current I

Gate to emitter voltage V

Power dissipation P

Isolation voltage V

Note

(1)

Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals

CES

C

CM

LM

ISOL

TC = 25 °C 400

(1)

GE

D

= 90 °C 250

T

C

Repetitive rating; VGE = 20 V, pulse width limited
by maximum junction temperature

VCC = 80 % (V
L = 10 μH, R

TC = 25 °C 961

T

= 90 °C 462

C

Any terminal to case, t = 1 minute 2500 V

), VGE = 20 V,

CES

= 2.0 ,

g

600 V

400

400

± 20 V

A

W

Revision: 20-Jul-12

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature T

Junction to case thermal resistance R

Case to sink thermal resistance, flat, greased surface R

Mounting torque, on terminals and heatsink T - - 1.3 Nm

Weight - 30 - g

Case style SOT-227

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, T

J

STG

thJC

thCS

- 40 - 150 °C

- - 0.13

-0.1 -

1

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°C/W

VS-GA250SA60S

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Emitter to collector breakdown voltage

Collector to emitter voltage V

Gate threshold voltage

Temperature coefficient of threshold voltage V

Collector to emitter leakage current I

Gate to emitter leakage current I

Notes

(1)

Pulse width  80 μs; duty factor  0.1 %

(BR)CES

V

(BR)ECS

CE(on)

V

GE(th)

GE(th)

CES

GES

VGE = 0 V, IC = 1 mA 600 - -

(1)

VGE = 0 V, IC = 1.0 A 18 - -

IC = 100 A

I

= 200 A - 1.33 1.66

C

I

= 100 A, TJ = 125 °C - 1.02 -

C

= 200 A, TJ = 125 °C - 1.32 -

I

C

I

= 100 A, TJ = 150 °C - 1.02 -

C

I

= 200 A, TJ = 150 °C - 1.33 -

C

V

GE

VCE = VGE, IC = 250 μA 3.0 4.5 6.0

V

= VGE, IC = 250 μA, TJ = 125 °C - 3.1 -

CE

/TJVCE = VGE, IC = 1 mA, 25 °C to 125 °C - - 12 - mV/°C

VGE = 0 V, VCE = 600 V - 20 1000 μA

V

= 0 V, VCE = 600 V, TJ = 125 °C - 0.2 -

GE

V

= 0 V, VCE = 600 V, TJ = 150 °C - 0.6 10

GE

VGE = ± 20 V - - ± 250 nA

Vishay Semiconductors

- 1.10 1.3

= 15 V

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate-to-collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

off

tot

d(on)

d(off)

on

off

tot

d(on)

d(off)

ies

oes

res

g

ge

gc

on

IC = 100 A, VCC = 600 V, VGE = 15 V

TJ = 25 °C
I

= 100 A

C

V

= 480 V

CC

V

= 15 V

GE

= 5.0 

r

f

R

g

L = 500 μH

Energy

losses
include tail
and diode

TJ = 125 °C
I

= 100 A

C

V

= 480 V

CC

V

= 15 V

GE

R

= 5.0 

r

f

E

g

L = 500 μH

Between lead and
center of die contact

recovery.

Diode used

60APH06

VGE = 0 V , VCC = 30 V, f = 1.0 MHz

- 770 1200

- 100 150

nCGate-to-emitter charge (turn-on) Q

- 260 380

-0.55-

-25-

mJTurn-off switching loss E

-25.5-

- 267 -

-42-

- 310 -

ns

- 450 -

-0.67-

-43.0-

mJTurn-off switching loss E

-43.7-

- 275 -

-50-

- 350 -

ns

- 700 -

-5.0- nH

- 16 250 -

- 1040 -

pFOutput capacitance C

- 190 -

Revision: 20-Jul-12

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IC - Continuous Collector Current (A)

Allowable Case Temperature (°C)

80

100

120

140

160

0

20

40

60

0 50 100 150 200 250 300 350 400 450 500

1

10

100

1000

0.50.0

1.0

1.5 2.0

2.5

VCE - Collector to Emitter Voltage (V)

I

C

- Collector to Emitter Current (A)

TJ = 150 °C

VGE = 15 V

TJ = 25 °C

TJ = 125 °C

V

GEth

-

Threshold Voltage (V)

3.5

4

4.5

5

5.5

6

2

2.5

3

0.20 0.40 0.60 0.80 1.00

TJ = 25 °C

TJ = 125 °C

IC - Continuous Collector Current (mA)

VS-GA250SA60S

Vishay Semiconductors

10

Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature

1

0.1

0.01

Collector Current (mA)

-

0.001

CES

I

0.0001
100 200 300 400 500 600

V

CE -

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

Collector-to-Emitter Voltage (V)

Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current

Fig. 2 - Typical Collector to Emitter Current Output Characteristics

1000

100

10

- Collector to Emitter Current (A)

C

I

1

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TJ = 150 °C

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

VGE - Gate to Emitter Voltage (V)

Fig. 3 - Typical IGBT Transfer Characteristics

Fig. 5 - Typical IGBT Threshold Voltage

2.5

2

TJ = 125 °C

TJ = 25 °C

1.5

Collector-to-Emitter Voltage (V)

-

CE

0.5

V

1

0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.

Junction Temperature, V

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Ic = 400 A

Ic = 200 A

Ic = 100 A

= 15 V

GE

Document Number: 94704

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IC - Collector Current (A)

Switching Time (μs)

0.01

0.1

1

0 25 50 75 100 125 150 175 200 225

t

f

t

d(off)

t

d(on)

t

r

Energy Losses (mJ)

Rg (Ω)

0.1

1

10

100

1000

0 1020304050

E

off

E

on

1000

100

10

1

Switching Energy (mJ)

0.1
25 50 75 100 125 150 175 200 225

IC - Collector Current (A)

VS-GA250SA60S

Vishay Semiconductors

E

off

E

on

Fig. 7 - Typical IGBT Energy Losses vs. IC, TJ = 125 °C,

V

= 480 V, VGE = 15 V, L = 500 μH, Rg = 5 ,

CC

Fig. 8 - Typical IGBT Switching Time vs. I

T

= 125 °C, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 ,

J

Diode used: 60APH06

Diode used: 60APH06

1

,

C

T

Fig. 9 - Typical IGBT Energy Losses vs. R

= 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH,

J

10

1

t

f

0.1
t

r

Diode used: 60APH06

t

d(on)

t

d(off)

,

g

Switching Time (μs)

0.01
0 102030405060

Rg (Ω)

Fig. 10 - Typical IGBT Switching Time vs. R

T

= 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH,

J

Diode used: 60APH06

,

g

Revision: 20-Jul-12

0.1

0.75

0.50

0.25

0.01

to Case (°C/W)

- Thermal Impedance Junction

thJC

Z

0.001

0.001

0.0001 0.001 0.01 0.1 1 10

Fig. 11 - Maximum Thermal Impedance Z

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0.1

0.05

0.02
DC

Rectangular Pulse Duration (s)

Characteristics

thJC

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0 200 400 600 800

0

4

8

12

16

20

QG - Total Gate Charge (nC)

V

GE

- Gate to Emitter Voltage (V)

VCC = 400 V
I

C

= 100 A

I

C

- Collector Current (A)

1

10

100

1000

1 10 100 1000

Safe operating area

VCE - Collector to Emitter Voltage (V)

VGE = 20 V
T

J

= 125 °C

VS-GA250SA60S

Vishay Semiconductors

30 000

24 000

18 000

12 000

250

200

150

100

Load Current (A)

C

ies

C

oes

For both:

Duty cycle: 50 %

= 125 °C

T

J

= 90 °C

T

sink

Gate drive as specied
Power dissipation = 140 W

Square wave:

60 % of rated
voltage

I

50

0

0.1

Ideal diodes

1 10 100

f - Frequency (kHz)

Fig. 12 - Typical Load Current vs. Frequency (Load Current = I

VGE = 0 V, f = 1 MHz

= Cge + Cgc, Cce shorted

C

ies

= C

C

res

gc

C

= Cce + C

oes

gc

Triangular wave:

Clamp voltage:
80 % of rated

of Fundamental)

RMS

I

C - Capacitance (pF)

6000

0

1 10 100

VCE - Collector to Emitter Voltage (V)

C

res

Fig. 13 - Typical Capacitance vs.

Collector to Emitter Voltage

Fig. 14 - Typical Gate Charge vs.

Gate to Emitter Voltage

Fig. 15 - Turn-Off SOA

Revision: 20-Jul-12

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480 V

4 x I

C

at 25 °C

480 µF
960 V

0 V to 480 V

RL ==

t = 5 µs

t

d (on)

t

f

t

r

90 %

t

d (off)

10 %

90 %

10 %

5 %

V

C

I

C

E

on

E

off

Ets = (Eon + E

off

)

1

2

3

VS-GA250SA60S

Vishay Semiconductors

L

V

*

C

D.U.T.

50 V

1000 V

121

2

* Driver same type as D.U.T.; V

= 80 % of VCE (max)

C

Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I

d

Fig. 16a - Clamped Inductive Load Test Circuit Fig. 16b - Pulsed Collector Current Test Circuit

I

C

50 V

L

Driver*

1000 V

1

2

* Driver same type as D.U.T., VC = 480 V

V

C

D.U.T.

3

Revision: 20-Jul-12

Fig. 17a - Switching Lost Test Circuit

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Fig. 17b - Switching Loss Waveforms

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1

4

3

2

Lead Assignment

3 (C)

2 (G)

1, 4 (E)

N-channel

ORDERING INFORMATION TABLE

VS-GA250SA60S

Vishay Semiconductors

Device code

CIRCUIT CONFIGURATION

CIRCUIT

CIRCUIT

CONFIGURATION CODE

GVS- A 250 S A 60 S

1

1

- Vishay Semiconductors product

2

- Insulated Gate Bipolar Transistor (IGBT)

3

- Generation 4, IGBT silicon

4

- Current rating (250 = 250 A)

5

- Circuit configuration (S = Single switch, without antiparallel diode)

6

- Package indicator (A = SOT-227)

- Voltage rating (60 = 600 V)

7

- Speed/type (S = Standard speed)

8

32 4 6 7 8

5

CIRCUIT DRAWING

Single switch, no
antiparallel diode

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

Revision: 20-Jul-12

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S

LINKS TO RELATED DOCUMENTS

7

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Document Number: 94704

www.vishay.com

38.30 (1.508)

37.80 (1.488)

-A-

12.50 (0.492)

13.00 (0.512)

7.45 (0.293)

7.60 (0.299)

Ø 4.10 (0.161)
Ø 4.30 (0.169)

30.50 (1.200)

29.80 (1.173)

31.50 (1.240)

32.10 (1.264)

14.90 (0.587)

15.20 (0.598)

6.25 (0.246)

6.50 (0.256)

25.70 (1.012)

24.70 (0.972)

2.10 (0.083)

2.20 (0.087)

-B-

R full

2.20 (0.087)

1.90 (0.075)

8.30 (0.327)

7.70 (0.303)

4 x

4.10 (0.161)

4.50 (0.177)

-C-

0.13 (0.005)

12.30 (0.484)

11.70 (0.460)

25.00 (0.984)

25.50 (1.004)

M M M

0.25 (0.010)

CA B

4 x M4 nuts

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

SOT-227 Generation II

Note

• Controlling dimension: millimeter

Revision: 02-Aug-12

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

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Document Number: 91000