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SOT-227
Insulated Gate Bipolar Transistor
VS-GA250SA60S
Vishay Semiconductors
Ultralow V
CE(on)
, 250 A
FEATURES
• Standard: Optimized for minimum saturation
voltage and low speed up to 5 kHz
• Lowest conduction losses available
• Fully isolated package (2500 V
AC
)
• Very low internal inductance (5 nH typical)
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
PRODUCT SUMMARY
V
CES
(typical) at 200 A, 25 °C 1.33 V
V
CE(on)
I
at TC = 90 °C
C
Note
(1)
Maximum collector current admitted 100 A to do not exceed the
maximum temperature of terminals
(1)
600 V
250 A
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped Inductive load current I
Gate to emitter voltage V
Power dissipation P
Isolation voltage V
Note
(1)
Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals
CES
C
CM
LM
ISOL
TC = 25 °C 400
(1)
GE
D
= 90 °C 250
T
C
Repetitive rating; VGE = 20 V, pulse width limited
by maximum junction temperature
VCC = 80 % (V
L = 10 μH, R
TC = 25 °C 961
T
= 90 °C 462
C
Any terminal to case, t = 1 minute 2500 V
), VGE = 20 V,
CES
= 2.0 ,
g
600 V
400
400
± 20 V
A
W
Revision: 20-Jul-12
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature T
Junction to case thermal resistance R
Case to sink thermal resistance, flat, greased surface R
Mounting torque, on terminals and heatsink T - - 1.3 Nm
Weight - 30 - g
Case style SOT-227
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, T
J
STG
thJC
thCS
- 40 - 150 °C
- - 0.13
-0.1 -
1
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Document Number: 94704
°C/W
Page 3
VS-GA250SA60S
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Emitter to collector breakdown voltage
Collector to emitter voltage V
Gate threshold voltage
Temperature coefficient of threshold voltage V
Collector to emitter leakage current I
Gate to emitter leakage current I
Notes
(1)
Pulse width 80 μs; duty factor 0.1 %
(BR)CES
V
(BR)ECS
CE(on)
V
GE(th)
GE(th)
CES
GES
VGE = 0 V, IC = 1 mA 600 - -
(1)
VGE = 0 V, IC = 1.0 A 18 - -
IC = 100 A
I
= 200 A - 1.33 1.66
C
I
= 100 A, TJ = 125 °C - 1.02 -
C
= 200 A, TJ = 125 °C - 1.32 -
I
C
I
= 100 A, TJ = 150 °C - 1.02 -
C
I
= 200 A, TJ = 150 °C - 1.33 -
C
V
GE
VCE = VGE, IC = 250 μA 3.0 4.5 6.0
V
= VGE, IC = 250 μA, TJ = 125 °C - 3.1 -
CE
/TJVCE = VGE, IC = 1 mA, 25 °C to 125 °C - - 12 - mV/°C
VGE = 0 V, VCE = 600 V - 20 1000 μA
V
= 0 V, VCE = 600 V, TJ = 125 °C - 0.2 -
GE
V
= 0 V, VCE = 600 V, TJ = 150 °C - 0.6 10
GE
VGE = ± 20 V - - ± 250 nA
Vishay Semiconductors
- 1.10 1.3
= 15 V
V
mA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate-to-collector charge (turn-on) Q
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Internal emitter inductance L
Input capacitance C
Reverse transfer capacitance C
off
tot
d(on)
d(off)
on
off
tot
d(on)
d(off)
ies
oes
res
g
ge
gc
on
IC = 100 A, VCC = 600 V, VGE = 15 V
TJ = 25 °C
I
= 100 A
C
V
= 480 V
CC
V
= 15 V
GE
= 5.0
r
f
R
g
L = 500 μH
Energy
losses
include tail
and diode
TJ = 125 °C
I
= 100 A
C
V
= 480 V
CC
V
= 15 V
GE
R
= 5.0
r
f
E
g
L = 500 μH
Between lead and
center of die contact
recovery.
Diode used
60APH06
VGE = 0 V , VCC = 30 V, f = 1.0 MHz
- 770 1200
- 100 150
nCGate-to-emitter charge (turn-on) Q
- 260 380
-0.55-
-25-
mJTurn-off switching loss E
-25.5-
- 267 -
-42-
- 310 -
ns
- 450 -
-0.67-
-43.0-
mJTurn-off switching loss E
-43.7-
- 275 -
-50-
- 350 -
ns
- 700 -
-5.0- nH
- 16 250 -
- 1040 -
pFOutput capacitance C
- 190 -
Revision: 20-Jul-12
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 4
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IC - Continuous Collector Current (A)
Allowable Case Temperature (°C)
80
100
120
140
160
0
20
40
60
0 50 100 150 200 250 300 350 400 450 500
1
10
100
1000
0.50.0
1.0
1.5 2.0
2.5
VCE - Collector to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
TJ = 150 °C
VGE = 15 V
TJ = 25 °C
TJ = 125 °C
V
GEth
-
Threshold Voltage (V)
3.5
4
4.5
5
5.5
6
2
2.5
3
0.20 0.40 0.60 0.80 1.00
TJ = 25 °C
TJ = 125 °C
IC - Continuous Collector Current (mA)
VS-GA250SA60S
Vishay Semiconductors
10
Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature
1
0.1
0.01
Collector Current (mA)
-
0.001
CES
I
0.0001
100 200 300 400 500 600
V
CE -
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Collector-to-Emitter Voltage (V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
1000
100
10
- Collector to Emitter Current (A)
C
I
1
Revision: 20-Jul-12
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TJ = 150 °C
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGE - Gate to Emitter Voltage (V)
Fig. 3 - Typical IGBT Transfer Characteristics
Fig. 5 - Typical IGBT Threshold Voltage
2.5
2
TJ = 125 °C
TJ = 25 °C
1.5
Collector-to-Emitter Voltage (V)
-
CE
0.5
V
1
0 20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
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Ic = 400 A
Ic = 200 A
Ic = 100 A
= 15 V
GE
Document Number: 94704
Page 5
www.vishay.com
IC - Collector Current (A)
Switching Time (μs)
0.01
0.1
1
0 25 50 75 100 125 150 175 200 225
t
f
t
d(off)
t
d(on)
t
r
Energy Losses (mJ)
Rg (Ω)
0.1
1
10
100
1000
0 1020304050
E
off
E
on
1000
100
10
1
Switching Energy (mJ)
0.1
25 50 75 100 125 150 175 200 225
IC - Collector Current (A)
VS-GA250SA60S
Vishay Semiconductors
E
off
E
on
Fig. 7 - Typical IGBT Energy Losses vs. IC, TJ = 125 °C,
V
= 480 V, VGE = 15 V, L = 500 μH, Rg = 5 ,
CC
Fig. 8 - Typical IGBT Switching Time vs. I
T
= 125 °C, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 ,
J
Diode used: 60APH06
Diode used: 60APH06
1
,
C
T
Fig. 9 - Typical IGBT Energy Losses vs. R
= 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH,
J
10
1
t
f
0.1
t
r
Diode used: 60APH06
t
d(on)
t
d(off)
,
g
Switching Time (μs)
0.01
0 102030405060
Rg (Ω)
Fig. 10 - Typical IGBT Switching Time vs. R
T
= 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH,
J
Diode used: 60APH06
,
g
Revision: 20-Jul-12
0.1
0.75
0.50
0.25
0.01
to Case (°C/W)
- Thermal Impedance Junction
thJC
Z
0.001
0.001
0.0001 0.001 0.01 0.1 1 10
Fig. 11 - Maximum Thermal Impedance Z
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0.1
0.05
0.02
DC
Rectangular Pulse Duration (s)
Characteristics
thJC
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Page 6
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0 200 400 600 800
0
4
8
12
16
20
QG - Total Gate Charge (nC)
V
GE
- Gate to Emitter Voltage (V)
VCC = 400 V
I
C
= 100 A
I
C
- Collector Current (A)
1
10
100
1000
1 10 100 1000
Safe operating area
VCE - Collector to Emitter Voltage (V)
VGE = 20 V
T
J
= 125 °C
VS-GA250SA60S
Vishay Semiconductors
30 000
24 000
18 000
12 000
250
200
150
100
Load Current (A)
C
ies
C
oes
For both:
Duty cycle: 50 %
= 125 °C
T
J
= 90 °C
T
sink
Gate drive as specied
Power dissipation = 140 W
Square wave:
60 % of rated
voltage
I
50
0
0.1
Ideal diodes
1 10 100
f - Frequency (kHz)
Fig. 12 - Typical Load Current vs. Frequency (Load Current = I
VGE = 0 V, f = 1 MHz
= Cge + Cgc, Cce shorted
C
ies
= C
C
res
gc
C
= Cce + C
oes
gc
Triangular wave:
Clamp voltage:
80 % of rated
of Fundamental)
RMS
I
C - Capacitance (pF)
6000
0
1 10 100
VCE - Collector to Emitter Voltage (V)
C
res
Fig. 13 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 14 - Typical Gate Charge vs.
Gate to Emitter Voltage
Fig. 15 - Turn-Off SOA
Revision: 20-Jul-12
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Document Number: 94704
Page 7
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480 V
4 x I
C
at 25 °C
480 µF
960 V
0 V to 480 V
RL ==
t = 5 µs
t
d (on)
t
f
t
r
90 %
t
d (off)
10 %
90 %
10 %
5 %
V
C
I
C
E
on
E
off
Ets = (Eon + E
off
)
1
2
3
VS-GA250SA60S
Vishay Semiconductors
L
V
*
C
D.U.T.
50 V
1000 V
121
2
* Driver same type as D.U.T.; V
= 80 % of VCE (max)
C
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I
d
Fig. 16a - Clamped Inductive Load Test Circuit Fig. 16b - Pulsed Collector Current Test Circuit
I
C
50 V
L
Driver*
1000 V
1
2
* Driver same type as D.U.T., VC = 480 V
V
C
D.U.T.
3
Revision: 20-Jul-12
Fig. 17a - Switching Lost Test Circuit
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Fig. 17b - Switching Loss Waveforms
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1
4
3
2
Lead Assignment
3 (C)
2 (G)
1, 4 (E)
N-channel
ORDERING INFORMATION TABLE
VS-GA250SA60S
Vishay Semiconductors
Device code
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
GVS- A 250 S A 60 S
1
1
- Vishay Semiconductors product
2
- Insulated Gate Bipolar Transistor (IGBT)
3
- Generation 4, IGBT silicon
4
- Current rating (250 = 250 A)
5
- Circuit configuration (S = Single switch, without antiparallel diode)
6
- Package indicator (A = SOT-227)
- Voltage rating (60 = 600 V)
7
- Speed/type (S = Standard speed)
8
32 4 6 7 8
5
CIRCUIT DRAWING
Single switch, no
antiparallel diode
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
Revision: 20-Jul-12
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S
LINKS TO RELATED DOCUMENTS
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Document Number: 94704
Page 9
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38.30 (1.508)
37.80 (1.488)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256)
25.70 (1.012)
24.70 (0.972)
2.10 (0.083)
2.20 (0.087)
-B-
R full
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
4 x
4.10 (0.161)
4.50 (0.177)
-C-
0.13 (0.005)
12.30 (0.484)
11.70 (0.460)
25.00 (0.984)
25.50 (1.004)
M M M
0.25 (0.010)
CA B
4 x M4 nuts
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
SOT-227 Generation II
Note
• Controlling dimension: millimeter
Revision: 02-Aug-12
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1
Document Number: 95423
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Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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