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www.vishay.com
Double INT-A-PAK
2-in-1 Package, 600 V and 200 A
Molding Type Module IGBT,
FEATURES
• High short circuit capability
• 10 μs short circuit capability
•V
• Maximum junction temperature 150 °C
• Latch-up free
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
• Material categorization: For definitions of compliance
with positive temperature coefficient
CE(on)
Bonding) technology
please see www.vishay.com/doc?99912
VS-GA200TH60S
Vishay Semiconductors
PRODUCT SUMMARY
V
CES
at TC = 80 °C200 A
I
C
(typical)
V
CE(on)
at I
= 200 A, 25 °C
C
600 V
1.9 V
TYPICAL APPLICATIONS
•UPS
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETERSYMBOLTEST CONDITIONSMAX. UNITS
Collector to emitter voltageV
Gate to emitter voltageV
Collector currentI
Pulsed collector currentI
Diode continuous forward currentI
Diode maximum forward currentI
Maximum power dissipationP
Short circuit withstand timet
RMS isolation voltageV
2
t-value, diodeI2tV
I
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
CM
CES
GES
C
F
FM
SC
ISOL
TC = 25 °C260
= 80 °C200
T
C
(1)
D
tp = 1 ms400
TC = 80 °C200
tp = 1 ms400
TJ = 150 °C 1042W
TC = 125 °C10μs
f = 50 Hz, t = 1 min2500V
= 0 V, t = 10 ms, TJ = 125 °C4900A2s
R
600
± 20
V
A
Revision: 17-Sep-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94762
VS-GA200TH60S
www.vishay.com
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETERSYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltageV
(BR)CES
TJ = 25 °C600--
VGE = 15 V, IC = 200 A, TJ = 25 °C-1.9-
Gate to emitter threshold voltageV
Collector cut-off currentI
Gate to emitter leakage currentI
CE(on)
GE(th)
CES
GES
= 15 V, IC = 200 A, TJ = 125 °C-2.3-
V
GE
VCE = VGE, IC = 0.25 mA, TJ = 25 °C3.54.55.5
VCE = V
VGE = V
, VGE = 0 V, TJ = 25 °C--5.0μA
CES
, VCE = 0 V, TJ = 25 °C--400nA
GES
SWITCHING CHARACTERISTICS
PARAMETERSYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay timet
Rise timet
Turn-off delay timet
Fall timet
Turn-on switching lossE
Turn-off switching lossE
Turn-on delay timet
Rise timet
Turn-off delay timet
Fall timet
Turn-on switching lossE
Turn-off switching lossE
Input capacitanceC
Reverse transfer capacitanceC
SC dataI
Stray inductanceL
Module lead resistance, terminal to chipR
d(on)
r
d(off)
f
on
off
d(on)
r
d(off)
f
on
off
ies
oes
res
SC
CE
CC’+EE’
VCC = 300 V, IC = 200 A, Rg = 4.7 ,
V
= ± 15 V, TJ = 25 °C
GE
VCC = 300 V, IC = 200 A, Rg = 4.7 ,
V
= ± 15 V, TJ = 125 °C
GE
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc 10 μs, VGE = 15 V, TJ = 125 °C,
= 300 V, V
V
CC
CEM
600 V
TC = 25 °C-0.35-m
Vishay Semiconductors
VCollector to emitter voltageV
-106-
-45-
-460-
-51-
-4.2-
-9.0-
-120-
-68-
-510-
-70-
-5.1-
-11.3-
-13.1-
-0.71-
-0.38-
-650-A
--20nH
ns
mJ
ns
mJ
nFOutput capacitanceC
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX. UNITS
= 25 °C-1.41.6
T
Diode forward voltageV
Diode reverse recovery chargeQ
F
rr
IF = 200 A
IF = 200 A, VR = 300 V,
Diode peak reverse recovery currentI
Diode reverse recovery energyE
rr
rec
Revision: 17-Sep-12
For technical questions within your region: DiodesAmericas@vishay.com
dI/dt = - 6000 A/μs,
= - 15 V
V
GE
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
J
T
= 125 °C-1.61.8
J
= 25 °C-9-
T
J
T
= 125 °C-16-
J
TJ = 25 °C-140-
T
= 125 °C-165-
J
TJ = 25 °C-2.4-
T
= 125 °C-4.2-
J
Document Number: 94762
V
μC
A
mJ
VS-GA200TH60S
46
8
10
0
100
150
50
200
250
300
350
400
I
C
(A)
VGE (V)
VCE = 20 V
25 °C
125 °C
0
2
4
6
8
10
12
14
16
18
20
0100300400200
IC (A)
E
on
E
off
E
on
, E
off
(mJ)
VGE = ± 15 V
T
J
= 125 °C
R
g
= 4.7 Ω
V
CC
= 300 V
05 1510202530
0
20
10
5
15
25
30
Rg (Ω)
E
on
, E
off
(mJ)
VGE = ± 15 V
T
J
= 125 °C
I
C
= 200 A
V
CC
= 300 V
E
on
E
off
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX. UNITS
Operating junction temperature rangeT
Storage temperature rangeT
Junction to case
IGBT
Case to sinkR
Mounting torque
Weight325g
400
VGE = 15 V
350
(A)
C
I
300
250
200
150
100
50
0
01234
25 °C
125 °C
VCE (V)
Fig. 1 - Typical Output Characteristics
R
J
STG
thJC
thCS
Conductive grease applied-0.03-
Power terminal screw: M62.5 to 5.0
Mounting screw: M63.0 to 6.0
Fig. 3 - Switching Loss vs. Collector Current
Vishay Semiconductors
- 40-150
- 40 -125
--0.12
°C
K/WDiode--0.27
Nm
Revision: 17-Sep-12
Fig. 2 - Typical Transfer Characteristics
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Fig. 4 - Switching Loss vs. Gate Resistor
Document Number: 94762
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
(V)
C (nF)
VCE (V)
10
1
10
2
10
0
10
-1
01015520253035
C
res
C
ies
C
oes
0100300400
200
10
2
10
3
10
1
t (ns)
IC (A)
t
d(off)
t
d(on)
t
f
t
r
VGE = ± 15 V
T
J
= 125 °C
R
g
= 4.7 Ω
V
CC
= 300 V
0402060
10
2
10
3
10
4
10
1
t (ns)
Rg (Ω)
VGE = ± 15 V
T
J
=
125 °C
I
C
= 200 A
V
CC
= 300 V
t
d(off)
t
d(on)
t
f
t
r
GE
V
www.vishay.com
20
VCC = 300 V
18
16
14
12
10
8
6
4
2
0
0
100 200 300500400
Qg (nC)
I
= 100 A
C
T
= 25 °C
J
VS-GA200TH60S
Vishay Semiconductors
700600
Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
400
350
300
250
Fig. 7 - Switching Times vs. I
C
Fig. 8 - Typical Switching Times vs. Gate Resistance R
25 °C
g
(A)
200
F
I
150
100
50
0
00.511.52
Fig. 9 - Diode Typical Forward Characteristics
Revision: 17-Sep-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VF (V)
4
125 °C
Document Number: 94762
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
t (s)
Z
thJC
(K/W)
Diode
IGBT
CIRCUIT CONFIGURATION
Fig. 10 - Diode Transient Thermal Impedance
VS-GA200TH60S
Vishay Semiconductors
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensionswww.vishay.com/doc?95525
Revision: 17-Sep-12
5
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94762
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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