C&H Technology VS-GA200TH60S User Manual

6121 Baker Road, Suite 108 Minnetonka, MN 55345
www.chtechnology.com
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
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www.vishay.com
Double INT-A-PAK
2-in-1 Package, 600 V and 200 A
Molding Type Module IGBT,
FEATURES
• High short circuit capability
• 10 μs short circuit capability
•V
• Maximum junction temperature 150 °C
• Latch-up free
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
• Material categorization: For definitions of compliance
with positive temperature coefficient
CE(on)
Bonding) technology
please see www.vishay.com/doc?99912
VS-GA200TH60S
Vishay Semiconductors
PRODUCT SUMMARY
V
CES
at TC = 80 °C 200 A
I
C
(typical)
V
CE(on)
at I
= 200 A, 25 °C
C
600 V
1.9 V
TYPICAL APPLICATIONS
•UPS
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Gate to emitter voltage V
Collector current I
Pulsed collector current I
Diode continuous forward current I
Diode maximum forward current I
Maximum power dissipation P
Short circuit withstand time t
RMS isolation voltage V
2
t-value, diode I2tV
I
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
CM
CES
GES
C
F
FM
SC
ISOL
TC = 25 °C 260
= 80 °C 200
T
C
(1)
D
tp = 1 ms 400
TC = 80 °C 200
tp = 1 ms 400
TJ = 150 °C 1042 W
TC = 125 °C 10 μs
f = 50 Hz, t = 1 min 2500 V
= 0 V, t = 10 ms, TJ = 125 °C 4900 A2s
R
600
± 20
V
A
Revision: 17-Sep-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
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Document Number: 94762
VS-GA200TH60S
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IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
TJ = 25 °C 600 - -
VGE = 15 V, IC = 200 A, TJ = 25 °C - 1.9 -
Gate to emitter threshold voltage V
Collector cut-off current I
Gate to emitter leakage current I
CE(on)
GE(th)
CES
GES
= 15 V, IC = 200 A, TJ = 125 °C - 2.3 -
V
GE
VCE = VGE, IC = 0.25 mA, TJ = 25 °C 3.5 4.5 5.5
VCE = V
VGE = V
, VGE = 0 V, TJ = 25 °C - - 5.0 μA
CES
, VCE = 0 V, TJ = 25 °C - - 400 nA
GES
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Input capacitance C
Reverse transfer capacitance C
SC data I
Stray inductance L
Module lead resistance, terminal to chip R
d(on)
r
d(off)
f
on
off
d(on)
r
d(off)
f
on
off
ies
oes
res
SC
CE
CC’+EE’
VCC = 300 V, IC = 200 A, Rg = 4.7 , V
= ± 15 V, TJ = 25 °C
GE
VCC = 300 V, IC = 200 A, Rg = 4.7 , V
= ± 15 V, TJ = 125 °C
GE
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc 10 μs, VGE = 15 V, TJ = 125 °C,
= 300 V, V
V
CC
CEM
600 V
TC = 25 °C - 0.35 - m
Vishay Semiconductors
VCollector to emitter voltage V
- 106 -
-45-
- 460 -
-51-
-4.2-
-9.0-
- 120 -
-68-
- 510 -
-70-
-5.1-
- 11.3 -
- 13.1 -
-0.71-
-0.38-
- 650 - A
- - 20 nH
ns
mJ
ns
mJ
nFOutput capacitance C
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
= 25 °C - 1.4 1.6
T
Diode forward voltage V
Diode reverse recovery charge Q
F
rr
IF = 200 A
IF = 200 A, VR = 300 V,
Diode peak reverse recovery current I
Diode reverse recovery energy E
rr
rec
Revision: 17-Sep-12
For technical questions within your region: DiodesAmericas@vishay.com
dI/dt = - 6000 A/μs,
= - 15 V
V
GE
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
J
T
= 125 °C - 1.6 1.8
J
= 25 °C - 9 -
T
J
T
= 125 °C - 16 -
J
TJ = 25 °C - 140 -
T
= 125 °C - 165 -
J
TJ = 25 °C - 2.4 -
T
= 125 °C - 4.2 -
J
Document Number: 94762
V
μC
A
mJ
VS-GA200TH60S
46
8
10
0
100
150
50
200
250
300
350
400
I
C
(A)
VGE (V)
VCE = 20 V
25 °C
125 °C
0
2
4
6
8
10
12
14
16
18
20
0 100 300 400200
IC (A)
E
on
E
off
E
on
, E
off
(mJ)
VGE = ± 15 V
T
J
= 125 °C
R
g
= 4.7 Ω
V
CC
= 300 V
05 1510 20 25 30
0
20
10
5
15
25
30
Rg (Ω)
E
on
, E
off
(mJ)
VGE = ± 15 V
T
J
= 125 °C
I
C
= 200 A
V
CC
= 300 V
E
on
E
off
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
Storage temperature range T
Junction to case
IGBT
Case to sink R
Mounting torque
Weight 325 g
400
VGE = 15 V
350
(A)
C
I
300
250
200
150
100
50
0
01234
25 °C
125 °C
VCE (V)
Fig. 1 - Typical Output Characteristics
R
J
STG
thJC
thCS
Conductive grease applied - 0.03 -
Power terminal screw: M6 2.5 to 5.0
Mounting screw: M6 3.0 to 6.0
Fig. 3 - Switching Loss vs. Collector Current
Vishay Semiconductors
- 40 - 150
- 40 - 125
--0.12
°C
K/WDiode - - 0.27
Nm
Revision: 17-Sep-12
Fig. 2 - Typical Transfer Characteristics
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Fig. 4 - Switching Loss vs. Gate Resistor
Document Number: 94762
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(V)
C (nF)
VCE (V)
10
1
10
2
10
0
10
-1
01015520253035
C
res
C
ies
C
oes
0 100 300 400
200
10
2
10
3
10
1
t (ns)
IC (A)
t
d(off)
t
d(on)
t
f
t
r
VGE = ± 15 V
T
J
= 125 °C
R
g
= 4.7 Ω
V
CC
= 300 V
04020 60
10
2
10
3
10
4
10
1
t (ns)
Rg (Ω)
VGE = ± 15 V
T
J
=
125 °C
I
C
= 200 A
V
CC
= 300 V
t
d(off)
t
d(on)
t
f
t
r
GE
V
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20
VCC = 300 V
18
16
14
12
10
8
6
4
2
0
0
100 200 300 500400
Qg (nC)
I
= 100 A
C
T
= 25 °C
J
VS-GA200TH60S
Vishay Semiconductors
700600
Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
400
350
300
250
Fig. 7 - Switching Times vs. I
C
Fig. 8 - Typical Switching Times vs. Gate Resistance R
25 °C
g
(A)
200
F
I
150
100
50
0
0 0.5 1 1.5 2
Fig. 9 - Diode Typical Forward Characteristics
Revision: 17-Sep-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VF (V)
4
125 °C
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www.vishay.com
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
t (s)
Z
thJC
(K/W)
Diode
IGBT
CIRCUIT CONFIGURATION
Fig. 10 - Diode Transient Thermal Impedance
VS-GA200TH60S
Vishay Semiconductors
6 7
1
2
3
5 4
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95525
Revision: 17-Sep-12
5
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94762
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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