C&H Technology VS-EMG050J60N User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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Phone – 1-800-274-4284
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EMIPAK2
PRODUCT SUMMARY
V
CES
typical at IC = 50 A 1.8 V
V
CE(ON)
I
at TC = 98 °C 50 A
C
Dual Mode PFC, 60 A
FEATURES
• NPT Warp2 PFC IGBT with low V
• Silicon carbide PFC diode
• Antiparallel FRED Pt
• Integrated thermistor
•Square RBSOA
• Operating frequency 60 kHz to 150 kHz
• Low internal inductances
• Low switching loss
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
VS-EMG050J60N is an integrated solution for dual stage
PFC converter in a single package. The EMIPAK2 package
600 V
is easy to use thanks to the solderable terminals and
provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.
VS-EMG050J60N
Vishay Semiconductors
CE(ON)
®
fast recovery
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Maximum operating junction temperature T
Storage temperature range T
RMS isolation voltage V
J
Stg
ISOL
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V
PFC IGBT Q1 - Q2
Collector to emitter voltage V
Gate to emitter voltage V
Pulsed collector current I
Clamped inductive load current I
Continuous collector current I
Power dissipation P
CES
20
GES
CM
(1)
LM
C
TC = 25 °C 88
T
= 80 °C 60
C
TC = 25 °C 338
D
T
= 80 °C 189
C
ANTIPARALLEL DIODE D1 - D2
Diode continuous forward current I
Single pulse forward current I
Power dissipation P
F
FSM
TC = 25 °C 16
= 80 °C 11
C
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 59
TC = 25 °C 29
D
= 80 °C 16
T
C
PFC DIODE D3 - D4
Repetitive peak reverse voltage V
Diode continuous forward current I
Single pulse forward current I
Power dissipation P
RRM
F
FSM
TC = 25 °C 25
= 80 °C 17
C
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 140
TC = 25 °C 74
D
T
= 80 °C 41
C
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1)
V
= 400 V, V
CC
= 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C
GE
150
- 40 to 125
600
150
150
600 V
°C
V
A
W
AT
W
AT
W
Revision: 09-Dec-11
For technical questions within your region: DiodesAmericas@vishay.com
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93495
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EMG050J60N
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
PFC IGBT Q1 - Q2
Collector to emitter breakdown voltage BV
Temperature coefficient of
breakdown voltage
Collector to emitter voltage V
BV
CE(ON)
Gate threshold voltage V
Temperature coefficient of threshold
voltage
V
GE(th)
Forward transconductance g
Transfer characteristics V
Zero gate voltage collector current I
Gate to emitter leakage current I
ANTIPARALLEL DIODE D1 - D2
Forward voltage drop V
PFC DIODE D3 - D4
Cathode to anode breakdown voltage V
Reverse leakage current I
Forward voltage drop V
CES
CES
GE(th)
fe
GE
CES
GES
F
BR
RM
F
/T
/T
VGE = 0 V, IC = 500 μA 600 - - V
VGE = 0 V, IC = 500 μA
J
(25 °C to 125 °C)
VGE = 15 V, IC = 27 A - 1.44 1.75
= 15 V, IC = 50 A - 1.8 2.1
V
GE
V
= 15 V, IC = 27 A, TJ = 125 °C - 1.7 2.05
GE
= 15 V, IC = 50 A, TJ = 125 °C - 2.2 2.5
V
GE
VCE = VGE, IC = 250 μA 2.9 3.9 5.3
VCE = VGE, IC = 1 mA
J
( 25 °C to 125 °C)
VCE = 20 V, IC = 50 A - 95 - s
VCE = 20 V, IC = 50 A - 5.9 - V
VGE = 0 V, VCE = 600 V - 3 100 μA
V
= 0 V, VCE = 600 V, TJ = 125 °C - 0.170 3 mA
GE
VGE = ± 20 V, VCE = 0 V - ± 200 nA
IF = 20 A - 2.19 2.4
I
= 20 A, TJ = 125 °C - 1.93 2.15
F
IR = 500 μA 600 - - V
VR = 600 V - 27 250 μA
V
= 600 V, TJ = 125 °C - 0.1 1 mA
R
IF = 10 A - 1.34 1.63
I
= 10 A, TJ = 125 °C - 1.36 1.65
F
Vishay Semiconductors
-0.1-V/°C
V
-- 10-mV/°C
V
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
PFC IGBT Q1 - Q2 (WITH FREEWHEELING D3 - D4 PFC DIODE)
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Revision: 09-Dec-11
For technical questions within your region: DiodesAmericas@vishay.com
ge
gc
ON
OFF
TOT
d(on)
d(off)
g
IC = 70 A
= 400 V
V
CC
V
= 15 V
GE
IC = 50 A
V
= 400 V
CC
V
= 15 V
GE
= 4.7
R
r
f
g
L = 500 μH
T
= 25 °C
J
(1)
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- 480 720
- 82 164
- 160 260
- 0.155 -
- 0.471 -
- 0.626 -
- 196 -
-29-
- 220 -
-67-
Document Number: 93495
nCGate to emitter charge (turn-on) Q
mJTurn-off switching loss E
ns
VS-EMG050J60N
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Input capacitance C
Reverse transfer capacitance C
Reverse bias safe operating area RBSOA
ANTIPARALLEL DIODE D1 - D2
Diode reverse recovery time t
Diode peak reverse current I
Diode reverse charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode reverse charge Q
PFC DIODE D3 - D4
Diode reverse recovery time t
Diode peak reverse current I
Diode reverse charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode reverse charge Q
Note
(1)
Energy losses include “tail” and diode reverse recovery.
ON
OFF
TOT
d(on)
d(off)
ies
oes
res
rr
rr
rr
rr
rr
rr
rr
rr
IC = 50 A
V
= 400 V
CC
V
= 15 V
GE
= 4.7
R
r
f
g
L = 500 μH
T
= 125 °C
J
(1)
VGE = 0 V
V
= 30 V
CC
f = 1 MHz
= 150 °C, IC = 150 A
T
J
V
= 400 V, VP = 600 V
CC
R
= 22 , V
g
= 15 V to 0 V
GE
VR = 200 V
I
= 20 A
F
rr
dl/dt = 500 A/μs, T
= 25 °C
J
VR = 200 V
I
= 20 A
F
rr
dl/dt = 500 A/μs, T
= 125 °C
J
VR = 200 V
= 10 A
I
F
rr
dl/dt = 200 A/μs, T
= 25 °C
J
VR = 200 V
I
= 10 A
F
rr
dl/dt = 200 A/μs, T
= 125 °C
J
Vishay Semiconductors
- 0.182 -
- 0.615 -
- 0.797 -
- 198 -
-29-
- 227 -
-75-
- 9500 -
- 780 -
- 116 -
Fullsquare
- 65 110 ns
-1115A
- 350 825 nC
- 83 130 ns
-1520A
- 587 1300 nC
-43- ns
-2.13- A
- 45.5 - nC
-44- ns
-2.14- A
- 46.5 - nC
mJTurn-off switching loss E
ns
pFOutput capacitance C
THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
R
Resistance
B value B T
Revision: 09-Dec-11
For technical questions within your region: DiodesAmericas@vishay.com
25
R
100
TJ = 100 °C 468 493 518
= 25 °C/TJ = 50 °C 3206 3375 3544 K
J
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4500 5000 5500
Document Number: 93495
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