C&H Technology VS-EMG050J60N User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

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EMIPAK2

PRODUCT SUMMARY

V

CES

typical at IC = 50 A 1.8 V

V

CE(ON)

I

at TC = 98 °C 50 A

C

Dual Mode PFC, 60 A

FEATURES

• NPT Warp2 PFC IGBT with low V

• Silicon carbide PFC diode

• Antiparallel FRED Pt

• Integrated thermistor

•Square RBSOA

• Operating frequency 60 kHz to 150 kHz

• Low internal inductances

• Low switching loss

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

VS-EMG050J60N is an integrated solution for dual stage
PFC converter in a single package. The EMIPAK2 package

600 V

is easy to use thanks to the solderable terminals and
provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.

VS-EMG050J60N

Vishay Semiconductors

CE(ON)

®

fast recovery

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Maximum operating junction temperature T

Storage temperature range T

RMS isolation voltage V

J

Stg

ISOL

TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V

PFC IGBT Q1 - Q2

Collector to emitter voltage V

Gate to emitter voltage V

Pulsed collector current I

Clamped inductive load current I

Continuous collector current I

Power dissipation P

CES

20

GES

CM

(1)

LM

C

TC = 25 °C 88

T

= 80 °C 60

C

TC = 25 °C 338

D

T

= 80 °C 189

C

ANTIPARALLEL DIODE D1 - D2

Diode continuous forward current I

Single pulse forward current I

Power dissipation P

F

FSM

TC = 25 °C 16

= 80 °C 11

C

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 59

TC = 25 °C 29

D

= 80 °C 16

T

C

PFC DIODE D3 - D4

Repetitive peak reverse voltage V

Diode continuous forward current I

Single pulse forward current I

Power dissipation P

RRM

F

FSM

TC = 25 °C 25

= 80 °C 17

C

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 140

TC = 25 °C 74

D

T

= 80 °C 41

C

Notes

• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.

(1)

V

= 400 V, V

CC

= 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C

GE

150

- 40 to 125

600

150

150

600 V

°C

V

A

W

AT

W

AT

W

Revision: 09-Dec-11

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VS-EMG050J60N

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

PFC IGBT Q1 - Q2

Collector to emitter breakdown voltage BV

Temperature coefficient of
breakdown voltage

Collector to emitter voltage V

BV

CE(ON)

Gate threshold voltage V

Temperature coefficient of threshold
voltage

V

GE(th)

Forward transconductance g

Transfer characteristics V

Zero gate voltage collector current I

Gate to emitter leakage current I

ANTIPARALLEL DIODE D1 - D2

Forward voltage drop V

PFC DIODE D3 - D4

Cathode to anode breakdown voltage V

Reverse leakage current I

Forward voltage drop V

CES

CES

GE(th)

fe

GE

CES

GES

F

BR

RM

F

/T

/T

VGE = 0 V, IC = 500 μA 600 - - V

VGE = 0 V, IC = 500 μA

J

(25 °C to 125 °C)

VGE = 15 V, IC = 27 A - 1.44 1.75

= 15 V, IC = 50 A - 1.8 2.1

V

GE

V

= 15 V, IC = 27 A, TJ = 125 °C - 1.7 2.05

GE

= 15 V, IC = 50 A, TJ = 125 °C - 2.2 2.5

V

GE

VCE = VGE, IC = 250 μA 2.9 3.9 5.3

VCE = VGE, IC = 1 mA

J

( 25 °C to 125 °C)

VCE = 20 V, IC = 50 A - 95 - s

VCE = 20 V, IC = 50 A - 5.9 - V

VGE = 0 V, VCE = 600 V - 3 100 μA

V

= 0 V, VCE = 600 V, TJ = 125 °C - 0.170 3 mA

GE

VGE = ± 20 V, VCE = 0 V - ± 200 nA

IF = 20 A - 2.19 2.4

I

= 20 A, TJ = 125 °C - 1.93 2.15

F

IR = 500 μA 600 - - V

VR = 600 V - 27 250 μA

V

= 600 V, TJ = 125 °C - 0.1 1 mA

R

IF = 10 A - 1.34 1.63

I

= 10 A, TJ = 125 °C - 1.36 1.65

F

Vishay Semiconductors

-0.1-V/°C

V

-- 10-mV/°C

V

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

PFC IGBT Q1 - Q2 (WITH FREEWHEELING D3 - D4 PFC DIODE)

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

ge

gc

ON

OFF

TOT

d(on)

d(off)

g

IC = 70 A

= 400 V

V

CC

V

= 15 V

GE

IC = 50 A
V

= 400 V

CC

V

= 15 V

GE

= 4.7 

R

r

f

g

L = 500 μH
T

= 25 °C

J

(1)

2

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- 480 720

- 82 164

- 160 260

- 0.155 -

- 0.471 -

- 0.626 -

- 196 -

-29-

- 220 -

-67-

Document Number: 93495

nCGate to emitter charge (turn-on) Q

mJTurn-off switching loss E

ns

VS-EMG050J60N

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Reverse bias safe operating area RBSOA

ANTIPARALLEL DIODE D1 - D2

Diode reverse recovery time t

Diode peak reverse current I

Diode reverse charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode reverse charge Q

PFC DIODE D3 - D4

Diode reverse recovery time t

Diode peak reverse current I

Diode reverse charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode reverse charge Q

Note

(1)

Energy losses include “tail” and diode reverse recovery.

ON

OFF

TOT

d(on)

d(off)

ies

oes

res

rr

rr

rr

rr

rr

rr

rr

rr

IC = 50 A
V

= 400 V

CC

V

= 15 V

GE

= 4.7 

R

r

f

g

L = 500 μH
T

= 125 °C

J

(1)

VGE = 0 V
V

= 30 V

CC

f = 1 MHz

= 150 °C, IC = 150 A

T

J

V

= 400 V, VP = 600 V

CC

R

= 22 , V

g

= 15 V to 0 V

GE

VR = 200 V
I

= 20 A

F

rr

dl/dt = 500 A/μs, T

= 25 °C

J

VR = 200 V
I

= 20 A

F

rr

dl/dt = 500 A/μs, T

= 125 °C

J

VR = 200 V

= 10 A

I

F

rr

dl/dt = 200 A/μs, T

= 25 °C

J

VR = 200 V
I

= 10 A

F

rr

dl/dt = 200 A/μs, T

= 125 °C

J

Vishay Semiconductors

- 0.182 -

- 0.615 -

- 0.797 -

- 198 -

-29-

- 227 -

-75-

- 9500 -

- 780 -

- 116 -

Fullsquare

- 65 110 ns

-1115A

- 350 825 nC

- 83 130 ns

-1520A

- 587 1300 nC

-43- ns

-2.13- A

- 45.5 - nC

-44- ns

-2.14- A

- 46.5 - nC

mJTurn-off switching loss E

ns

pFOutput capacitance C

THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

R

Resistance

B value B T

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

25

R

100

TJ = 100 °C 468 493 518

= 25 °C/TJ = 50 °C 3206 3375 3544 K

J

3

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4500 5000 5500

Document Number: 93495



VS-EMG050J60N

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

80604020

100

0

100

160

0

40

60

140

80

120

20

93495_03

DC

V

CE

(V)

TJ (°C)

10 16060 110

0.5

1.0

1.5

2.0

2.5

3.0

3.5

93495_04

4.0

100 A

50 A

27 A

VGE = 15 V

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Q1 - Q2 PFC IGBT - Junction to case thermal resistance (per switch)

D1 - D2 AP diode - Junction to case thermal resistance (per diode) - - 4.29

D3 - D4 PFC diode - Junction to case thermal resistance (per diode) - - 1.69

Q1 - Q2 PFC IGBT - Case to sink thermal resistance (per switch)

D1 - D2 AP diode - Case to sink thermal resistance (per diode) - 3.66 -

D3 - D4 PFC diode - Case to sink thermal resistance (per diode) - 1.1 -

Mounting torque (M4) -23Nm

Weight -39- g

Note

(1)

Mounting surface flat, smooth, and greased

100

(A)

C

I

93495_01

VGE = 15 V

90

80

70

60

50

40

30

20

10

0

0 1.5 3.01.0 2.50.5 2.0 3.5

TJ = 125 °C

TJ = 150 °C

TJ = 25 °C

VCE (V)

Fig. 1 - Typical PFC IGBT Output Characteristics

R

thJC

R

thCS

Fig. 3 - Maximum DC PFC IGBT Collector Current vs.

Vishay Semiconductors

- - 0.37

-0.31-

(1)

Case Temperature per Junction

°C/W

100

TJ = 125 °C

90

80

70

60

50

(A)

C

I

40

30

20

10

93495_02

Revision: 09-Dec-11

0

0 1.5 2.5 3.0 3.50.5 1.0 2.0 4.0

Fig. 2 - Typical PFC IGBT Output Characteristics

For technical questions within your region: [e-mail]

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VGE = 8 V

= 10 V

V

GE

= 12 V

V

GE

= 15 V

V

GE

= 18 V

V

GE

VCE (V)

Fig. 4 - Typical PFC IGBT Collector to Emitter Voltage vs.

Junction Temperature

4

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I

CE

(A)

VGE (V)

387456

0

93495_05

100

30

40

10

50

60

20

80

90

70

TJ = 25 °C

VCE = 20 V

TJ = 125 °C

I

C

(A)

VCE (V)

1 10 100 1000

0.01

0.1

1

93495_07

1000

10

100

I

CES

(mA)

V

CES

(V)

100 600200 300 400 500

0.0001

93495_08

1

0.1

0.01

0.001

125 °C

25 °C

VS-EMG050J60N

Vishay Semiconductors

Fig. 5 - Typical PFC IGBT Transfer Characteristics

4.5

4.0

3.5

TJ = 25 °C

(V)

geth

V

3.0

2.5

2.0

01.00.20.1 0.3 0.5 0.7 0.90.4 0.6 0.8

93495_06

Fig. 6 - Typical PFC IGBT Gate Threshold Voltage

Revision: 09-Dec-11

Fig. 7 - IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V, Rg = 22 

J

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TJ = 125 °C

IC (mA)

Fig. 8 - Typical PFC IGBT Zero Gate Voltage Collector Current

100

90

80

70

60

50

(A)

F

I

40

93495_09

30

20

10

0

04.00.5 1.0 1.5 2.0 2.5 3.0 3.5

TJ = 125 °C

TJ = 25 °C

VFM (V)

Fig. 9 - Typical Antiparallel Diode Forward Characteristics

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

93495_10

IF - Continuous Forward Current (A)

DC

106421412816

Fig. 10 - Maximum DC Antiparallel Diode Forward Current vs.

Case Temperature per Junction

5

Document Number: 93495

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18

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I

R

(mA)

VR (V)

100 200 300 400 500 600

0.00001

0.0001

0.001

0.01

0.1

1

93495_13

125 °C

25 °C

Energy (mJ)

IC (A)

020 608040 100

0

93495_14

1.8

0.6

1.2

1.0

0.8

1.4

1.6

0.4

0.2

E

on

E

off

Switching Time (ns)

IC (A)

020 806040 100

10

93495_15

1000

100

t

d(off)

t

d(on)

t

f

t

r

t

rr

(ns)

dIF/dt (A/μs)

100 200 300 400

93495_16

500

50

150

130

70

90

110

125 °C

25 °C

50

40

TJ = 25 °C

30

(A)

F

I

20

10

0

04.00.5 1.0 1.5 2.0 3.02.5 3.5

93495_11

VFM (V)

Fig. 11 - Typical PFC Diode Forward Characteristics

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

93495_12

IF - Continuous Forward Current (A)

DC

Fig. 12 - Maximum DC PFC Diode Forward Current vs.

Case Temperature per Junction

TJ = 125 °C

201510525

VS-EMG050J60N

Vishay Semiconductors

Fig. 14 - Typical PFC IGBT Energy Loss vs. I

(with Freewheeling D3 - D4 PFC Diode)

T

= 125 °C, VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH

J

30

Fig. 15 - Typical PFC IGBT Switching Time vs. I

(with Freewheeling D3 - D4 PFC Diode)

T

= 125 °C, VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH

J

C

C

Revision: 09-Dec-11

Fig. 13 - Typical PFC Diode Reverse Leakage Current

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Fig. 16 - Typical Antiparallel Reverse Recovery Time vs. dI

V

= 200 V, IF = 20 A

R

6

Document Number: 93495

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/dt

F

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I

rr

(A)

dIF/dt (A/μs)

100 200 300 400

93495_17

500

3

17

9

13

5

11

15

7

125 °C

25 °C

Q

rr

(nC)

dIF/dt (A/μs)

100 200 300 400

93495_18

500

200

600

300

400

500

350

450

550

250

125 °C

25 °C

t

rr

(ns)

dIF/dt (A/μs)

100 200 300 400

93495_19

500

10

70

40

60

30

20

50

125 °C

I

rr

(A)

dIF/dt (A/μs)

100 200 300 400

93495_20

500

0.5

4.5

3.5

2.5

1.5

125 °C

VS-EMG050J60N

Vishay Semiconductors

Fig. 17 - Typical Antiparallel Reverse Recovery Current vs. dIF/dt

V

= 200 V, IF = 20 A

R

Fig. 18 - Typical Antiparallel Reverse Recovery Charge vs. dI

V

= 200 V, IF = 20 A

R

50

48

46

/dt

F

125 °C

Fig. 19 - Typical PFC Diode Reverse Recovery Time vs. dI

V

= 200 V, IF = 10 A

R

Fig. 20 - Typical PFC Diode Reverse Recovery Current vs. dI

V

= 200 V, IF = 10 A

R

/dt

F

/dt

F

Revision: 09-Dec-11

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44

(nC)

rr

42

Q

40

38

36

100 200 400300

93495_21

dIF/dt (A/μs)

Fig. 21 - Typical PFC Diode Reverse Recovery Charge vs. dI

V

= 200 V, IF = 10 A

R

500

/dt

F

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1

0.1

0.01

- Thermal Impedance

Junction to Case (°C/W)

thJC

Z

0.001

0.00001

93495_22

10

Vishay Semiconductors

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Fig. 22 - Maximum Thermal Impedance Z

Characteristics (IGBT)

thJC

VS-EMG050J60N

10

1

0.1

- Thermal Impedance

Junction to Case (°C/W)

thJC

Z

0.01

0.00001

93495_23

10

1

0.1

- Thermal Impedance

Junction to Case (°C/W)

thJC

Z

0.01

0.00001

93495_24

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Fig. 23 - Maximum Thermal Impedance Z

0.0001 0.001 0.01 0.1 1

Characteristics (Antiparallel Diode)

thJC

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

t1 - Rectangular Pulse Duration (s)

Fig. 24 - Maximum Thermal Impedance Z

Characteristics (PFC Diode)

thJC

10

10

Revision: 09-Dec-11

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ORDERING INFORMATION TABLE

VS-EMG050J60N

Vishay Semiconductors

Device code

TYPICAL CONNECTION

VS- EM G 050 J 60 N

51 32 4 6 7

1 - Vishay Semiconductors product

2 - Package indicator (EM = EMIPAK2)

3 - Circuit configuration (G = Dual mode PFC)

4 - Current rating (050 = 50 A)

5 - Die technology (J = Warp2 IGBT)

6 - Voltage rating (60 = 600 V)

7 - N = Ultrafast

Note

• Please refer to lead assignment for correct pin configuration. This diagram shows electrical connections only.

Revision: 09-Dec-11

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11

33

24

23

Th

27

28

6

5

2

1

17

35

14

15

30

D4

D2

D1

D3

Q2

Q1

36

13

17

6

3036

35

33

24 23

27

28

13 14

5

11

15

21

CIRCUIT CONFIGURATION

VS-EMG050J60N

Vishay Semiconductors

PACKAGE

Dimensions www.vishay.com/doc?95436

Revision: 09-Dec-11

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LINKS TO RELATED DOCUMENTS

10

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Document Number: 93495

DIMENSIONS in millimeters

5.1

12.7

8.9

10.2

7.6

7.6

11.4

55 ± 0.3

15.2 14

58 ± 0.3

40.6

1.3

2.6

1.3

5.1

3.8

3.8

10.1

16.5

62 ± 0.3

53

23.8

23

41.5

Ø 5

Ø 2

Ø 4.3

Ø 1 ± 0.1

20.5 ± 1

17 ± 1

12

M4

Ø 0.4

6.4

16.8

145°

62 ± 0.3

39 ± 0.3

3 ref.

0.1

20.5 ± 1

24.1

20.3

16.5

12.7

8.9

2.5

6.3

11.4

20.3

24.1

13.3

12.1

9.59.5

5.7

7

3.2

1.9

7

10.8

15.9

1.9

5.7

8.3

12.1

15.9

Pins position
with tolerance

Front view

FF

Top view

Flat metal plate or
with optional M4 thread

Detail “A” Scale 10:1

Ceramic gap

Detail “A”

Side view

Outline Dimensions

Vishay Semiconductors

EMIPAK2

Document Number: 95436 For technical questions, contact: [e-mail]
Revision: 27-Jan-11 1

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Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

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Document Number: 91000