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VS390LM..CS05CB Series
Fast Recovery Diodes
Vishay High Power Products
PRODUCT SUMMARY
Junction size Rectangular 390 x 270 mils
Wafer size 4"
class 1000/1200 V
V
RRM
Passivation process Glassivated MOAT
Reference Vishay HPP
packaged part
80EPF Series
FEATURES
• 100 % tested at probe
• Bondable top metal
• Wafer in box, and die in chip carrier
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage V
Maximum repetitive reverse voltage V
Note
(1)
Nitrogen flow on die edge
RRM
FM
(1)
TJ = 25 °C, IF = 80 A 1300 mV
TJ = 25 °C, I
= 100 µA 1000/1200 V
RRM
MECHANICAL DATA
Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (20 µm)
Chip dimensions 390 x 270 mils (9.91 x 6.86 mm) - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 260 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
Document Number: 93850 For technical questions, contact: die-wafer@vishay.com
Revision: 28-Mar-08 1
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