C&H Technology VS370BG12DCB User Manual
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Vishay High Power Products
Phase Control Thyristors
VS370BG12DCB
PRODUCT SUMMARY
Junction size Square 370 mils
Wafer size 4"
class 1200 V
V
RRM
Passivation process Glassivated MESA
Reference Vishay HPP
packaged part
VSKT56 Series
FEATURES
• 100 % tested at probe
• Wire bondable SCR
• Wafer in box, and die in chip carrier
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum on-state voltage V
Maximum reverse repetitive voltage V
Maximum required DC gate current to trigger I
Maximum required DC gate voltage to trigger V
Holding current range I
Maximum latching current I
Note
(1)
Nitrogen flow on die edge
RRM
GT
TM
(1)
GT
H
L
TJ = 25 °C, IT = 25 A 1.2
TJ = 25 °C, I
TJ = 25 °C, anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
= 100 µA 1200
RRM
150 mA
5 to 200
400
2V
RoHS
COMPLIANT
V
mA
MECHANICAL DATA
Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (20 µm)
Chip dimensions 370 x 370 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 370 µm ± 10 µm
Maximum width of sawing line 130 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
Document Number: 93900 For technical questions, contact: die-wafer@vishay.com
Revision: 28-Mar-08 1
www.vishay.com
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