C&H Technology VS343SG12H User Manual
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Vishay High Power Products
Phase Control Thyristors
VS343SG12H
PRODUCT SUMMARY
Junction size Square 343 mils
Wafer size 4"
V
RRM/VDRM
Passivation process Glassivated MESA
Reference Vishay HPP
packaged part
class 1200 V
N/a
FEATURES
• 100 % tested at probe
• Solderable SCR
• Probed die in chip carrier
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical on-state voltage V
Maximum repetitive reverse/forward voltage V
Required DC gate current to trigger I
Maximum required DC gate voltage to trigger V
Holding current Range I
Maximum latching current I
Note
(1)
Nitrogen flow on die edge
TM
RRM/VDRM
GT
GT
H
L
TJ = 25 °C, IT = 25 A 1.2
(1)
TJ = 25 °C, I
TJ = 25 °C, anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
RRM/IDRM
= 100 µA 1200
5 to 100 mA
2V
5 to 200
400
RoHS
COMPLIANT
V
mA
MECHANICAL DATA
Nominal back metal composition (thickness)
Nominal front metal composition (thickness)
Chip dimensions 340 x 340 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 330 µm ± 10 µm
Maximum width of sawing line 130 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95129
Document Number: 93842 For technical questions, contact: die-wafer@vishay.com
Revision: 28-Mar-08 1
Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
www.vishay.com
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