C&H Technology VS230SG-HCB User Manual
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VS230SG..HCB Series
Vishay High Power Products
Phase Control Thyristors
PRODUCT SUMMARY
Junction size Square 230 mils
Wafer size 4"
class 600/1200 V
V
RRM
Passivation process Glassivated MESA
Reference Vishay HPP
packaged part
N/a
FEATURES
• 100 % tested at probe
• Solderable SCR
• Wafer in box, and die in chip carrier
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum on-state voltage V
Maximum repetitive reverse voltage V
Maximum required DC gate current to trigger I
Maximum required DC gate voltage to trigger V
Holding current range I
Maximum latching current I
Note
(1)
Nitrogen flow on die edge
RRM
GT
TJ = 25 °C, IT = 25 A 1.3
TM
(1)
TJ = 25 °C, I
TJ = 25 °C, anode supply = 6 V, resistive load
GT
H
Anode supply = 6 V, resistive load
L
= 100 µA 600/1200
RRM
60 mA
1.9 V
5 to 150
400
RoHS
COMPLIANT
V
mA
MECHANICAL DATA
Nominal back metal composition (thickness)
Nominal front metal composition (thickness)
Chip dimensions 230 x 230 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 100 > flat
Wafer thickness 370 µm ± 10 µm
Maximum width of sawing line 130 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
Document Number: 93836 For technical questions, contact: die-wafer@vishay.com
Revision: 11-Apr-08 1
Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
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