C&H Technology VS230LM06CS02CB User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

Fast Recovery Diodes

VS230LM06CS02CB

Vishay High Power Products

PRODUCT SUMMARY

Junction size Square 230 mils

Wafer size 4"

class 600 V

V

RRM

Passivation process Glassivated MOAT

Reference Vishay HPP

packaged part

40EPF Series

FEATURES

• 100 % tested at probe

• Bondable top metal

• Wafer in box, and die in chip carrier

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage V

Maximum repetitive reverse voltage V

Reverse recovery time t

Note

(1)

Nitrogen flow on die edge

RRM

TJ = 25 °C, IF = 20 A 1080 mV

FM

(1)

TJ = 25 °C, I

TJ = 25 °C, IF = 1 A, -dI/dt = 100 A/µs 60 ns

rr

= 100 µA 600 V

RRM

MECHANICAL DATA

Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)

Nominal front metal composition (thickness) 100 % Al (20 µm)

Chip dimensions 230 x 230 mils - see dimensions (link at the end of datasheet)

Wafer diameter 100 mm, with standard < 110 > flat

Wafer thickness 260 µm ± 10 µm

Maximum width of sawing line 45 µm

Reject ink dot size Ø 0.25 mm minimum

Ink dot location See dimensions (link at the end of datasheet)

Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination

RoHS

COMPLIANT

Document Number: 93835 For technical questions, contact: [e-mail]
Revision: 31-Mar-08 1

www.vishay.com

VS230LM06CS02CB

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

VS 230 L M 06 C S02 CB

1 - Vishay HPP device

2 - Chip dimension in mils

3 - Type of device: L = Wire bondable fast recovery diode

4 - Passivation process: M = Glassivated MOAT

5 - Voltage code x 100 = V

6

- Metallization: C = Aluminum (anode) - silver (cathode)

7 -t

8 - CB = Probed uncut die (wafer in box)

Fast Recovery Diodes

51324678

RRM

code: S02 = 60 ns

rr

None = Probed die in chip carrier

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95125

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 31-Mar-08

Document Number: 93835