C&H Technology VS230DM12CCB User Manual

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Suite 108
Minnetonka, MN 55345

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1-800-274-4284

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Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

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Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

Vishay High Power Products

Standard Recovery Diodes

VS230DM12CCB

PRODUCT SUMMARY

Junction size Square 230 mils

Wafer size 4"

class 1200 V

V

RRM

Passivation process Glassivated MOAT

Reference Vishay HPP

packaged part

40EPS Series

FEATURES

• 100 % tested at probe

• Bondable top metal

• Wafer in box, and die in chip carrier

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage V

Maximum repetitive reverse voltage V

Note

(1)

Nitrogen flow on die edge

RRM

TJ = 25 °C, IF = 20 A 1050 mV

FM

(1)

TJ = 25 °C, I

= 100 µA 1200 V

RRM

MECHANICAL DATA

Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)

Nominal front metal composition (thickness) 100 % Al (20 µm)

Chip dimensions 230 x 230 mils - see dimensions (link at the end of datasheet)

Wafer diameter 100 mm, with standard < 110 > flat

Wafer thickness 300 µm ± 10 µm

Maximum width of sawing line 45 µm

Reject ink dot size Ø 0.25 mm minimum

Ink dot location See dimensions (link at the end of datasheet)

Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination

RoHS

COMPLIANT

Document Number: 93834 For technical questions, contact: [e-mail]
Revision: 31-Mar-08 1

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