C&H Technology VS210DG-HCB User Manual

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VS210DG..HCB Series

Vishay High Power Products

High Power Rectifier Diodes

PRODUCT SUMMARY

Junction size Square 210 mils

Wafer size 4"

class 600/1200 V

V

RRM

Passivation process Glassivated MESA

Reference Vishay HPP

packaged part

40HF Series

FEATURES

• 100 % tested at probe

• Solderable top metal

• Wafer in box

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage V

Maximum repetitive reverse voltage V

Note

(1)

Nitrogen flow on die edge

RRM

TJ = 25 °C, IF = 25 A 1000 mV

FM

(1)

TJ = 25 °C, IR = 100 µA 600/1200 V

MECHANICAL DATA

Nominal back metal composition (thickness)

Nominal front metal composition (thickness)

Chip dimensions 210 x 210 mils - see dimensions (link at the end of datasheet)

Wafer diameter 100 mm, with standard < 110 > flat

Wafer thickness 300 µm

Maximum width of sawing line 130 µm

Reject ink dot size Ø 0.25 mm minimum

Ink dot location See dimensions (link at the end of datasheet)

Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination

Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)

RoHS

COMPLIANT

Document Number: 93830 For technical questions, contact: [e-mail]
Revision: 28-Mar-08 1

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