C&H Technology VS207LM-CS02CB User Manual

6121 Baker Road, Suite 108 Minnetonka, MN 55345
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1-800-274-4284
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Please contact the C&H Technology team for the following questions -
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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
VS207LM..CS02CB Series
Fast Recovery Diodes
Vishay High Power Products
PRODUCT SUMMARY
Junction size Rectangular 207 x 157 mils
Wafer size 4"
class 200 to 600 V
V
RRM
Passivation process Glassivated MOAT
Reference Vishay HPP
packaged part
20ETF Series
FEATURES
• 100 % tested at probe
• Bondable top metal
• Wafer in box, and die in chip carrier
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage V
Maximum repetitive reverse voltage V
Note
(1)
Nitrogen flow on die edge
RRM
TJ = 25 °C, IF = 20 A 1300 mV
FM
(1)
TJ = 25 °C, I
= 100 µA 200 to 600 V
RRM
MECHANICAL DATA
Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (20 µm)
Chip dimensions 207 x 157 mils (5.26 x 3.99 mm) - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 260 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
Document Number: 93889 For technical questions, contact: die-wafer@vishay.com Revision: 31-Mar-08 1
www.vishay.com
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