C&H Technology VS207DM-CCB User Manual
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VS207DM..CCB Series
Vishay High Power Products
Standard Recovery Diodes
PRODUCT SUMMARY
Junction size Rectangular 207 x 157 mils
Wafer size 4"
class 800/1200 V
V
RRM
Passivation process Glassivated MOAT
Reference Vishay HPP
packaged part
20ETS Series
FEATURES
• 100 % tested at probe
• Bondable top metal
• Wafer in box, and die in chip carrier
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage V
Maximum repetitive reverse voltage V
Note
(1)
Nitrogen flow on die edge
RRM
TJ = Ambient, IF = 20 A 1100 mV
FM
(1)
TJ = Ambient, I
= 100 µA 800/1200 V
RRM
MECHANICAL DATA
Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (20 µm)
Chip dimensions 207 x 157 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 300 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
RoHS
COMPLIANT
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95156
Document Number: 93888 For technical questions, contact: die-wafer@vishay.com
Revision: 31-Mar-08 1
VS 207 D M 12 C CB
5132467
1 - Vishay HPP device
2 - Chip dimension in mils
3 - Type of device: D = Wire bondable standard recovery diode
4 - Passivation process: M = Glassivated MOAT
5 - Voltage code x 100 = V
RRM
6 - Metallization: C = Aluminum (anode) - silver (cathode)
7 - CB = Probed uncut die (wafer in box)
None = Probed die in chip carrier
LINKS TO RELATED DOCUMENTS
Available class
08 = 800 V
12 = 1200 V
www.vishay.com
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