C&H Technology VS180LM-CS05CB User Manual

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VS180LM..CS05CB Series

Fast Recovery Diodes

Vishay High Power Products

PRODUCT SUMMARY

Junction size Square 180 mils

Wafer size 4"

class 1000/1200 V

V

RRM

Passivation process Glassivated MOAT

Reference Vishay HPP

packaged part

20ETF Series

FEATURES

• 100 % tested at probe

• Bondable top metal

• Wafer in box, and die in chip carrier

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage V
Maximum repetitive reverse voltage V

Note

(1)

Nitrogen flow on die edge

RRM

TJ = 25 °C, IF = 20 A 1350 mV

FM

(1)

TJ = 25 °C, I

= 100 µA 1000/1200 V

RRM

MECHANICAL DATA

Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (20 µm)
Chip dimensions 180 x 180 mils (4.57 x 4.57) - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 260 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination

RoHS

COMPLIANT

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95153

Document Number: 93883 For technical questions, contact: [e-mail]
Revision: 28-Mar-08 1

VS 180 L M 12 C S05 CB

51324678

1 - Vishay HPP device

2 - Chip dimension in mils

3 - Type of device: L = Wire bondable fast recovery diode

4 - Passivation process: M = Glassivated MOAT

5 - Voltage code x 100 = V

6

- Metallization: C = Aluminum (anode) - silver (cathode)

7 - Fast recovery type: S05 = 500 ns

8 - CB = Probed uncut die (wafer in box)

None = Probed die in chip carrier

LINKS TO RELATED DOCUMENTS

RRM

Available class

10 = 1000 V
12 = 1200 V

www.vishay.com