C&H Technology VS180LG-HS05CB User Manual

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VS180LG..HS05CB Series

Fast Recovery Diodes

Vishay High Power Products

PRODUCT SUMMARY

Junction size Square 180 mils

Wafer size 4"

class 1000/1200 V

V

RRM

Passivation process Glassivated MESA

Reference Vishay HPP

packaged part

16FL Series

FEATURES

• 100 % tested at probe

• Solderable top metal

• Wafer in box, and die in chip carrier

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage V
Maximum repetitive reverse voltage V

Note

(1)

Nitrogen flow on die edge

RRM

TJ = Ambient, IF = 16 A 1400 mV

FM

(1)

TJ = Ambient, I

= 100 µA 1000/1200 V

RRM

MECHANICAL DATA

Nominal back metal composition (thickness)
Nominal front metal composition (thickness)
Chip dimensions 180 x 180 mils (4.57 x 4.57) - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 260 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination

Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)

RoHS

COMPLIANT

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95152

Document Number: 93881 For technical questions, contact: [e-mail]
Revision: 27-Mar-08 1

VS 180 L G 12 H S05 CB

51324678

1 - Vishay HPP device

2 - Chip dimension in mils

3 - Type of device: L = Fast recovery diode

4 - Passivation process: G = Glassivated MESA

5 - Voltage code x 100 = V

6

- Metallization: H = Silver (anode) - silver (cathode)

7 - Fast recovery type: S05 = 500 ns

8 - CB = Probed uncut die (wafer in box)

None = Probed die in chip carrier

LINKS TO RELATED DOCUMENTS

RRM

Available class

10 = 1000 V
12 = 1200 V

www.vishay.com