C&H Technology VS-175BGQ045 User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical ● Application ● Assembly ● Availability ● Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES

-

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www.vishay.com

Cathode Anode

PowerTab

®

PRODUCT SUMMARY

Package PowerTab

I

F(AV)

V

R

V

at I

F

F

I

RM

T

max. 150 °C

J

Diode variation Single die

E

AS

Schottky Rectifier, 175 A

FEATURES

• 150 °C max. operating junction temperature

• High frequency operation

• Ultralow forward voltage drop

• Continuous high current operation

• Guard ring for enhanced ruggedness and long
term reliability

• Screw mounting only

• Designed and qualified according to JEDEC-JESD47

®

175 A

45 V

0.7 V

640 mA at 125 °C

40 mJ

• PowerTab

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The VS-175BGQ045 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.

®

package

VS-175BGQ045

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

VOLTAGE RATINGS

PARAMETER SYMBOL 175BGQ045 UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Non-repetitive avalanche energy E

Repetitive avalanche current I

Revision: 11-Dec-12

Rectangular waveform 175 A

T

C

tp = 5 μs sine 8700 A

175 Apk (typical) 0.63 V

T

J

Range - 55 to 150 °C

R

RWM

F(AV)

I

FSM

AR

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

50 % duty cycle at TC = 103 °C, rectangular waveform 175 A

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse 1550

TJ = 25 °C, IAS = 6 A, L = 2 mH 40 mJ

AS

Current decaying linearly to zero in 1 μs
Frequency limited by T

maximum VA = 1.5 x VR typical

J

1

103 °C

45 V

150 °C

45 V

Following any rated load
condition and with rated
V

applied

RRM

, [e-mail], [e-mail]

8700

6A

Document Number: 94582

A

VS-175BGQ045

V

FM -

Forward Voltage Drop (V)

I

F

-

Instantaneous Forward Current (A)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

1

10

100

1000

TJ = 25 °C

TJ = 125 °C

TJ = 150 °C

VR - Reverse Voltage (V)

I

R

- Reverse Current (mA)

0 5 10 15 20 25 30 35 40 45

0.01

0.1

1

10

100

1000

10 000

75 °C

100 °C

50 °C

125 °C

150 °C

25 °C

www.vishay.com

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

Forward voltage drop V

FM

100 A

175 A 0.67 0.75

(1)

100 A

175 A 0.63 0.7

T

= 25 °C

J

= 150 °C

T

J

TJ = 150 °C, VR = 45 V 1200 2000

Reverse leakage current I

Maximum junction capacitance C

Typical series inductance L

Maximum voltage rate of change dV/dt Rated V

RM

(1)

T

S

= 25 °C

J

T

= 125 °C 360 640

J

V

= Rated V

R

VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C 5600 pF

Measured from tab to mounting plane 3.5 nH

R

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 1.2 (10)

maximum 2.4 (20)

Marking device Case style PowerTab

, T

T

J

Stg

R

R

thJC

thCS

DC operation 0.25

Mounting surface, smooth and greased 0.20

®

Vishay Semiconductors

0.55 0.58

0.49 0.54

0.6 2

R

10 000 V/μs

- 55 to 150 °C

°C/W

5g

0.18 oz.

N · m

(lbf · in)

175BGQ045

V

mAT

Revision: 11-Dec-12

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Reverse Voltage

2

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 94582

www.vishay.com

C

T

-

Junction Capacitance (pF)

1000

10 000

0 10 20 30 40 50

TJ = 25 °C

VR - Reverse Voltage (V)

t

- Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impedance (°C/W)

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

0.01

0.1

1

Single Pulse

(Thermal Resistance)

D = 0.2

D = 0.25

D = 0.33

D = 0.5

D = 0.75

VS-175BGQ045

Vishay Semiconductors

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance Z

160

140

120

100

Square wave (D = 0.50)
80 % rated V

80

Allowable Case Temperature (°C)

see note

60

0 50 100 150 200 250 300

I

F(AV) -

Fig. 5 - Maximum Allowable Case Temperature vs.

applied

R

(1)

Average Forward Current (A)

Average Forward Current

DC

Revision: 11-Dec-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions within your region: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Characteristics

thJC

200

150

100

50

Average Power Loss (W)

0

0 50 100 150 200 250

Fig. 6 - Forward Power Loss Characteristics

3

, [e-mail], [e-mail]

180°
120°

90°
60°
30°

RMS Limit

I

Average Forward Current (A)

F(AV) -

DC

Document Number: 94582

www.vishay.com

Current
monitor

High-speed

switch

D.U.T.

R

g

= 25 Ω

+

Freewheel

diode

V

d

= 25 V

L

IRFP460

40HFL40S02

10 000

At Any Rated Load Condition
And With Rated V

- Non-Repetitive Surge Current (A)

FSM

I

Following Surge

1000

10 100 1000 10 000

RRM

Applied

t - Square Wave Pulse Duration (μs)

Fig. 7 - Maximum Non-Repetitive Surge Current

VS-175BGQ045

Vishay Semiconductors

Fig. 8 - Unclamped Inductive Test Circuit

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6);

F(AV)

R

ORDERING INFORMATION TABLE

Device code

1 - Vishay Semiconductors product

2 - Current rating

3 - Essential part number

4 - Voltage code = V

Dimensions www.vishay.com/doc?95240

Part marking information www.vishay.com/doc?95370

Application note www.vishay.com/doc?95179

Revision: 11-Dec-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

LINKS TO RELATED DOCUMENTS

175VS- BGQ 045

1 3 42

4

RRM

Document Number: 94582

, [e-mail], [e-mail]

www.vishay.com

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

15.90 (0.62)

15.60 (0.61)

15.60 (0.61)

14.80 (0.58)

4.00 (0.15)

5.20 (0.20)

8.45 (0.33)

8.20 (0.32)

Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)

4.95 (0.19)

4.75 (0.18)

4.20 (0.16)

5.45 REF.

(0.21 REF.)

PowerTab

Lead 1

12.40 (0.48)

12.10 (0.47)

Lead 2

4.95 (0.19)

Lead assignments

Lead 1 = Cathode

Lead 2 = Anode

1.35 (0.05)

1.20 (0.04)

3.09 (0.12)

3.00 (0.11)

0.60 (0.02)

0.40 (0.01)

®

Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)

18.25 (0.71)

18.00 (0.70)

1.30 (0.05)

1.10 (0.04)

27.65 (1.08)

27.25 (1.07)

12.20 (0.48)

12.00 (0.47)

39.8 (1.56)

39.6 (1.55)

Revision: 03-Aug-11

For technical questions within your region: [e-mail]

1

, [e-mail], [e-mail]

Document Number: 95240

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12

1

Document Number: 91000