C&H Technology VS-175BGQ030 User Manual

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Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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Please contact the C&H Technology team for the following questions -
Technical Application Assembly Availability Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES
-
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Cathode Anode
PowerTab
®
PRODUCT SUMMARY
Package PowerTab
I
F(AV)
V
R
V
at I
F
F
I
RM
max. 125 °C
T
J
Diode variation Single die
E
AS
Schottky Rectifier, 175 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab
®
175 A
30 V
0.52 V
650 mA at 125 °C
80 mJ
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-175BGQ030 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems.
®
package
VS-175BGQ030
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-175BGQ030 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
Revision: 04-Jul-11
Rectangular waveform 175 A
T
C
112 °C
30 V
tp = 5 μs sine 7400 A
175 Apk (typical) 0.47 V
T
J
150 °C
Range - 55 to 150 °C
R
RWM
F(AV)
50 % duty cycle at TC = 112 °C, rectangular waveform 175 A
5 μs sine or 3 μs rect. pulse
I
FSM
AR
10 ms sine or 6 ms rect. pulse 1400
TJ = 25 °C, IAS = 12 A, L = 1.12 mH 80 mJ
AS
Current decaying linearly to zero in 1 μs Frequency limited by T
J
1
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maximum VA = 1.5 x VR typical
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30 V
Following any rated load
7400
condition and with rated V
applied
RRM
12 A
Document Number: 94583
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
A
VS-175BGQ030
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop V
FM
100 A
175 A 0.55 0.59
(1)
100 A
175 A 0.47 0.52
T
= 25 °C
J
= 150 °C
T
J
TJ = 125 °C, VR = 15 V 160 220
= 150 °C, VR = 30 V 1400 2000
T
Reverse leakage current I
Maximum junction capacitance C
Typical series inductance L
RM
(1)
T
S
Maximum voltage rate of change dV/dt Rated V
J
T
= 25 °C
J
T
= 125 °C 450 650
J
V
= Rated V
R
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 8500 pF
Measured from tab to mounting plane 3.5 nH
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 1.2 (10)
maximum 2.4 (20)
Marking device Case style PowerTab
, T
T
J
Stg
R
R
thJC
thCS
DC operation 0.25
Mounting surface, smooth and greased 0.20
®
Vishay Semiconductors
0.47 0.49
0.36 0.39
1.3 4.5
R
10 000 V/μs
- 55 to 150 °C
°C/W
5g
0.18 oz.
N · m
(lbf · in)
175BGQ045
V
mA
Revision: 04-Jul-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94583
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Instantaneous Forward Current - I
F
(A)
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
1000
Tj = 25°C
Tj = 125°C
Tj = 150°C
Forward Voltage Drop - VFM (V)
Reverse Current - I
R
(mA)
Reverse Voltage - VR (V)
0 5 10 15 20 25 30
0.01
0.1
1
10
100
1000
10000
75°C
100°C
50°C
125°C
150°C
25°C
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.2
D = 0.25
D = 0.33
D = 0.5
D = 0.75
VS-175BGQ030
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
T
Ju nc ti o n C a p ac it a n c e - C ( p F)
1000
0 5 10 15 20 25 30 35
T = 25 ° C
J
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Revision: 04-Jul-11
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
3
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Average Forward Current - I
F
(AV)
(A)
Allowable Case Temperature (°C)
0 50 100 150 200 250 300
60
80
100
120
140
160
DC
Square wave (D=0.50) 80% rated Vr applied
see note (1)
Square Wave Pulse Duration - tp(microsec)
Non-Repetitive Surge Current - I
FSM
(A)
10 100 1000 10000
1000
10000
Current monitor
High-speed
switch
D.U.T.
R
g
= 25 Ω
+
Freewheel
diode
V
d
= 25 V
L
IRFP460
40HFL40S02
VS-175BGQ030
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
160
140
120
180° 120°
90° 60° 30°
RMS Limit
100
80
DC
60
40
Average Power Loss - (Watts)
20
0
050100150200250
Average Forward Current - IF
(AV)
Fig. 6 - Forward Power Loss Characteristics
(A)
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
Revision: 04-Jul-11
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
) x R
REV
x VFM at (I
F(AV)
thJC
;
F(AV)
/D) (see fig. 6);
R
4
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94583
VS-175BGQ030
2 - Current rating
3 - Essential part number
4 - Voltage code = V
RRM
Device code
1 32 4
VS- 175 BGQ 030
1 - Vishay Semiconductors product
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95240
Part marking information www.vishay.com/doc?95370
SPICE model www.vishay.com/doc?95427
Application note www.vishay.com/doc?95179
Vishay Semiconductors
Revision: 04-Jul-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
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Document Number: 94583
www.vishay.com
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
15.90 (0.62)
15.60 (0.61)
15.60 (0.61)
14.80 (0.58)
4.00 (0.15)
5.20 (0.20)
8.45 (0.33)
8.20 (0.32)
Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15)
4.95 (0.19)
4.75 (0.18)
4.20 (0.16)
5.45 REF.
(0.21 REF.)
PowerTab
Lead 1
12.40 (0.48)
12.10 (0.47)
Lead 2
4.95 (0.19)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
1.35 (0.05)
1.20 (0.04)
3.09 (0.12)
3.00 (0.11)
0.60 (0.02)
0.40 (0.01)
®
Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15)
18.25 (0.71)
18.00 (0.70)
1.30 (0.05)
1.10 (0.04)
27.65 (1.08)
27.25 (1.07)
12.20 (0.48)
12.00 (0.47)
39.8 (1.56)
39.6 (1.55)
Revision: 03-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 95240
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
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