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Vishay High Power Products
Standard Recovery Diodes
VS135DM12CCB
PRODUCT SUMMARY
Junction size Rectangular 135 x 100 mils
Wafer size 4"
class 1200 V
V
RRM
Passivation process Glassivated MOAT
Reference Vishay HPP
packaged part
8EWS..S Series
FEATURES
• 100 % tested at probe
• Bondable top metal
• Wafer in box, and die in chip carrier
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage V
Maximum repetitive reverse voltage V
Note
(1)
Nitrogen flow on die edge
RRM
TJ = 25 °C, IF = 8 A 1.1
FM
(1)
TJ = 25 °C, I
= 100 µA 1200
RRM
V
MECHANICAL DATA
Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (5 µm)
Chip dimensions 135 x 100 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 290 µm ± 10 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
RoHS
COMPLIANT
Document Number: 93821 For technical questions, contact: die-wafer@vishay.com
Revision: 27-Mar-08 1
www.vishay.com

VS135DM12CCB
Vishay High Power Products
Standard Recovery Diodes
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95118
VS 135 D M 12 C CB
5132467
1 - Vishay HPP device
2 - Chip dimension in mils
3
- Type of device: D = Wire bondable standard recovery diode
4 - Passivation process: M = Glassivated MOAT
- Voltage code x 100 = V
5
- Metallization: C = Aluminum (anode) - silver (cathode)
6
7 - CB = Probed uncut die (wafer in box)
None = Probed die in chip carrier
LINKS TO RELATED DOCUMENTS
RRM
www.vishay.com For technical questions, contact: die-wafer@vishay.com
2 Revision: 27-Mar-08
Document Number: 93821