C&H Technology VS-100MT060WDF User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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Please contact the C&H Technology team for the following questions -
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Application
Assembly
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Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
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MTP
Primary MTP IGBT Power Module
PRODUCT SUMMARY
FRED Pt® AP DIODE, TJ = 150 °C
V
RRM
at 80 °C 11 A
I
F(DC)
at 25 °C at 60 A 2.08 V
V
F
IGBT, T
V
CES
at 25 °C at 60 A 1.98 V
V
CE(ON)
at 80°C 83 A
I
C
FRED Pt
I
F(DC)
at 25 °C at 60 A 2.06 V
V
F
®
CHOPPER DIODE, TJ = 150 °C
V
R
at 80 °C 17 A
= 150 °C
J
600 V
600 V
600 V
VS-100MT060WDF
Vishay Semiconductors
FEATURES
• Buck PFC stage with warp 2 IGBT and FRED Pt
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• Compliant to RoHS Directive 2011/65/EU
• Very low stray inductance design for high speed operation
• Designed and qualified for industrial level
BENEFITS
• Lower conduction losses and switching losses
• Higher switching frequency up to 150 kHz
• Optimized for welding, UPS, and SMPS applications
• PCB solderable terminals
• Direct mounting to heatsink
®
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
FRED Pt
Antiparallel
Diode
IGBT
FRED Pt
Chopper Diode
Revision: 01-Mar-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Repetitive peak reverse voltage V
Maximum continuous forward current
= 150 °C maximum
T
J
Maximum power dissipation P
Collector to emitter voltage V
Gate to emitter voltage V
Maximum continuous collector current
= 15 V, TJ = 150 °C maximum
at V
GE
Clamped inductive load current I
Maximum power dissipation P
Repetitive peak reverse voltage V
Maximum continuous forward current
T
= 150 °C maximum
J
Maximum power dissipation P
Maximum operating junction temperature T
Storage temperature range T
Isolation voltage V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RRM
I
F(DC)
RRM
ISOL
CES
GE
I
C
LM
I
F
Stg
TC = 25 °C 17
T
= 80 °C 11
C
TC = 25 °C 25 W
D
TJ = 25 °C 600 V
I
max. ± 250 ns ± 20 V
GES
TC = 25 °C 121
= 80 °C 83
C
TC = 25 °C 462 W
D
TC = 25 °C 26
T
= 80 °C 17
C
TC = 25 °C 56 W
D
J
V
t = 1 s, TJ = 25 °C 3500 V
RMS
1
For technical questions, contact: indmodules@vishay.com
600 V
300
600 V
150
- 40 to + 150
Document Number: 93412
A
AT
A
°C
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Blocking voltage BV
AP Diode
Forward voltage drop V
Collector to emitter
breakdown voltage
Temperature coefficient of
breakdown voltage
IGBT
Collector to emitter voltage V
Gate threshold voltage V
Collector to emitter
leakage current
Gate to emitter leakage I
Forward voltage drop V
FRED Pt
Chopper
Blocking voltage BV
Diode
Reverse leakage current I
RECOVERY PARAMETER
Peak reverse recovery current I
AP Diode
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Reverse recovery time t
FRED Pt
Chopper
Diode
Reverse recovery charge Q
Peak reverse recovery current I
Reverse recovery time t
Reverse recovery charge Q
V
RRM
FM
BV
CES
BR(CES)
CE(ON)
GE(th)
I
CES
GES
FM
RM
RM
rr
rr
rr
rr
rr
rr
rr
rr
rr
0.5 mA 600 - - V
IF = 60 A - 2.08 2.43
I
= 60 A, TJ = 125 °C - 2.05 2.3
F
VGE = 0 V, IC = 0.5 mA 600 - - V
/TJIC = 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C
VGE 15 V, IC = 60 A - 1.93 2.29
V
= 15 V, lC = 60 A, TJ = 125 °C - 2.36 2.80
GE
VCE = VGE, IC = 500 μA 2.9 - 6.0 V
VGE = 0 V, VCE = 600 V - - 100 μA
= 0 V, VCE = 600 V, TJ = 125 °C - - 2.0 mA
V
GE
VGE = ± 20 V - - ± 100 nA
IF = 60 A - 2.06 2.53
= 60 A, TJ = 125 °C - 1.83 2.26
F
0.5 mA 600 - -
V
= 600 V - - 75 μA
RRM
V
= 600 V, TJ = 125 °C - - 0.5 mA
RRM
IF = 60 A
dI/dt = 200 A/μs
= 200 V
V
R
IF = 60 A
dI/dt = 200 A/μs
= 200 V
V
R
IF = 60 A
dI/dt = 200 A/μs
V
= 200 V, TJ = 125 °C
R
VS-100MT060WDF
Vishay Semiconductors
V
V
VI
-6711A
- 120 160 ns
- 620 850 nC
-4.56.0A
-6785ns
- 130 250 nC
- 9.5 12.0 A
- 128 165 ns
- 601 900 nC
Revision: 01-Mar-12
2
Document Number: 93412
For technical questions, contact: indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
PFC IGBT
Total gate charge Q
Gate to drain (Miller) charge Q
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Input capacitance C
Reverse transfer capacitance C
gd
on
off
tot
d(on)
d(off)
on
off
tot
d(on)
d(off)
ies
oes
res
g
IC = 60 A
V
= 480 V
V
CC
= 15 V
GE
gs
IC = 100 A, VCC = 360 V, VGE = 15 V
R
= 5 , L = 500 μH, TJ = 25 °C
r
f
g
IC = 100 A, VCC = 360 V, VGE = 15 V
= 5 , L = 500 μH, TJ = 125 °C
R
r
f
g
VGE = 0 V
V
= 30 V
CC
f = 1 MHz
VS-100MT060WDF
Vishay Semiconductors
- 460 -
- 160 -
-70-
-0.2-
-0.96-
-1.16-
- 240 -
-47-
- 240 -
-66-
-0.33-
-1.45-
-1.78-
- 246 -
-50-
- 246 -
-71-
- 9500 -
- 780 -
- 120 -
nCGate to source charge Q
mJTurn-off switching loss E
ns
mJTurn-off switching loss E
ns
pFOutput capacitance C
THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R T
B value B T
= 25 °C - 30 000 -
J
= 25 °C/TJ = 85 °C - 4000 - K
J
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
AP FRED Pt Diode Junction to case diode thermal resistance
IGBT Junction to case IGBT thermal resistance - - 0.27
FRED Pt
Chopper Diode
Junction to case diode thermal resistance - - 2.25
Case to sink, flat, greased surface per module R
Mounting torque ± 10 % to heatsink
(1)
R
thJC
thCS
Approximate weight - 65 - g
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.
--4.9
°C/W
-0.06-°C/W
--4Nm
Revision: 01-Mar-12
3
Document Number: 93412
For technical questions, contact: indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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