C&H Technology VS-100MT060WDF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

MTP

Primary MTP IGBT Power Module

PRODUCT SUMMARY

FRED Pt® AP DIODE, TJ = 150 °C

V

RRM

at 80 °C 11 A

I

F(DC)

at 25 °C at 60 A 2.08 V

V

F

IGBT, T

V

CES

at 25 °C at 60 A 1.98 V

V

CE(ON)

at 80°C 83 A

I

C

FRED Pt

I

F(DC)

at 25 °C at 60 A 2.06 V

V

F

®

CHOPPER DIODE, TJ = 150 °C

V

R

at 80 °C 17 A

= 150 °C

J

600 V

600 V

600 V

VS-100MT060WDF

Vishay Semiconductors

FEATURES

• Buck PFC stage with warp 2 IGBT and FRED Pt
hyperfast diode

• Integrated thermistor

• Isolated baseplate

• Compliant to RoHS Directive 2011/65/EU

• Very low stray inductance design for high speed operation

• Designed and qualified for industrial level

BENEFITS

• Lower conduction losses and switching losses

• Higher switching frequency up to 150 kHz

• Optimized for welding, UPS, and SMPS applications

• PCB solderable terminals

• Direct mounting to heatsink

®

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

FRED Pt
Antiparallel
Diode

IGBT

FRED Pt
Chopper Diode

Revision: 01-Mar-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Repetitive peak reverse voltage V

Maximum continuous forward current

= 150 °C maximum

T

J

Maximum power dissipation P

Collector to emitter voltage V

Gate to emitter voltage V

Maximum continuous collector current

= 15 V, TJ = 150 °C maximum

at V

GE

Clamped inductive load current I

Maximum power dissipation P

Repetitive peak reverse voltage V

Maximum continuous forward current
T

= 150 °C maximum

J

Maximum power dissipation P

Maximum operating junction temperature T

Storage temperature range T

Isolation voltage V

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RRM

I

F(DC)

RRM

ISOL

CES

GE

I

C

LM

I

F

Stg

TC = 25 °C 17

T

= 80 °C 11

C

TC = 25 °C 25 W

D

TJ = 25 °C 600 V

I

max. ± 250 ns ± 20 V

GES

TC = 25 °C 121

= 80 °C 83

C

TC = 25 °C 462 W

D

TC = 25 °C 26

T

= 80 °C 17

C

TC = 25 °C 56 W

D

J

V

t = 1 s, TJ = 25 °C 3500 V

RMS

1

For technical questions, contact: [e-mail]

600 V

300

600 V

150

- 40 to + 150

Document Number: 93412

A

AT

A

°C

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Blocking voltage BV

AP Diode

Forward voltage drop V

Collector to emitter
breakdown voltage

Temperature coefficient of
breakdown voltage

IGBT

Collector to emitter voltage V

Gate threshold voltage V

Collector to emitter
leakage current

Gate to emitter leakage I

Forward voltage drop V
FRED Pt
Chopper

Blocking voltage BV
Diode

Reverse leakage current I

RECOVERY PARAMETER

Peak reverse recovery current I

AP Diode

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Reverse recovery time t
FRED Pt
Chopper
Diode

Reverse recovery charge Q

Peak reverse recovery current I

Reverse recovery time t

Reverse recovery charge Q

V

RRM

FM

BV

CES

BR(CES)

CE(ON)

GE(th)

I

CES

GES

FM

RM

RM

rr

rr

rr

rr

rr

rr

rr

rr

rr

0.5 mA 600 - - V

IF = 60 A - 2.08 2.43

I

= 60 A, TJ = 125 °C - 2.05 2.3

F

VGE = 0 V, IC = 0.5 mA 600 - - V

/TJIC = 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C

VGE 15 V, IC = 60 A - 1.93 2.29

V

= 15 V, lC = 60 A, TJ = 125 °C - 2.36 2.80

GE

VCE = VGE, IC = 500 μA 2.9 - 6.0 V

VGE = 0 V, VCE = 600 V - - 100 μA

= 0 V, VCE = 600 V, TJ = 125 °C - - 2.0 mA

V

GE

VGE = ± 20 V - - ± 100 nA

IF = 60 A - 2.06 2.53

= 60 A, TJ = 125 °C - 1.83 2.26

F

0.5 mA 600 - -

V

= 600 V - - 75 μA

RRM

V

= 600 V, TJ = 125 °C - - 0.5 mA

RRM

IF = 60 A
dI/dt = 200 A/μs

= 200 V

V

R

IF = 60 A
dI/dt = 200 A/μs

= 200 V

V

R

IF = 60 A
dI/dt = 200 A/μs
V

= 200 V, TJ = 125 °C

R

VS-100MT060WDF

Vishay Semiconductors

V

V

VI

-6711A

- 120 160 ns

- 620 850 nC

-4.56.0A

-6785ns

- 130 250 nC

- 9.5 12.0 A

- 128 165 ns

- 601 900 nC

Revision: 01-Mar-12

2

Document Number: 93412

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

PFC IGBT

Total gate charge Q

Gate to drain (Miller) charge Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

gd

on

off

tot

d(on)

d(off)

on

off

tot

d(on)

d(off)

ies

oes

res

g

IC = 60 A
V

= 480 V

V

CC

= 15 V

GE

gs

IC = 100 A, VCC = 360 V, VGE = 15 V
R

= 5 , L = 500 μH, TJ = 25 °C

r

f

g

IC = 100 A, VCC = 360 V, VGE = 15 V

= 5 , L = 500 μH, TJ = 125 °C

R

r

f

g

VGE = 0 V
V

= 30 V

CC

f = 1 MHz

VS-100MT060WDF

Vishay Semiconductors

- 460 -

- 160 -

-70-

-0.2-

-0.96-

-1.16-

- 240 -

-47-

- 240 -

-66-

-0.33-

-1.45-

-1.78-

- 246 -

-50-

- 246 -

-71-

- 9500 -

- 780 -

- 120 -

nCGate to source charge Q

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Resistance R T

B value B T

= 25 °C - 30 000 - 

J

= 25 °C/TJ = 85 °C - 4000 - K

J

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

AP FRED Pt Diode Junction to case diode thermal resistance

IGBT Junction to case IGBT thermal resistance - - 0.27

FRED Pt
Chopper Diode

Junction to case diode thermal resistance - - 2.25

Case to sink, flat, greased surface per module R

Mounting torque ± 10 % to heatsink

(1)

R

thJC

thCS

Approximate weight - 65 - g

Note

(1)

A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.

--4.9

°C/W

-0.06-°C/W

--4Nm

Revision: 01-Mar-12

3

Document Number: 93412

For technical questions, contact: [e-mail]

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

I

C

(A)

VCE (V)

1 10 100 1000

0.01

0.1

1

93412_02

1000

10

100

I

C

(A)

VCE (V)

012345

0

93412_03

250

50

150

100

200

VGE = 9 V

VGE = 12 V

VGE = 15 V

VGE = 18 V

I

C

(A)

VCE (V)

012345

0

93412_04

250

50

150

100

200

VGE = 9 V

VGE = 12 V

VGE = 15 V

VGE = 18 V

I

CES

(mA)

V

CES

(V)

100 600200 300 400 500

0.0001

0.001

93412_06

10

1

0.1

0.01

150 °C

25 °C

160

140

120

100

80

60

40

Maximum Allowable

Case Temperature (°C)

20

0

0

93412_01

IC - Continuous Collector Current (A)

Fig. 1 - Maximum IGBT Continuous Collector Current vs.

Case Temperature

80 100604020

VS-100MT060WDF

Vishay Semiconductors

140120

Fig. 4 - Typical IGBT Output Characteristics, T

250

200

= 125 °C

J

Fig. 2 - IGBT Reverse BIAS SOA T

= 150 °C, VGE = 15 V

J

TC = 125 °C

TC = 25 °C

(A)

C

I

150

100

50

0

5678910

93412_05

VGE (V)

Fig. 5 - Typical IGBT Transfer Characteristics, T

= 125 °C

J

Fig. 3 - Typical IGBT Output Characteristics, T

Revision: 01-Mar-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 25 °C

J

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

4

For technical questions, contact: [e-mail]

Document Number: 93412

5.0

93412_09

IF - Continuous Forward Current (A)

Allowable Case Temperature (°C)

0

20

40

60

80

100

120

140

160

0 5 10 15 20

I

F

- Instantaneous Forward Drop (A)

VF - Forward Voltage Drop (V)

0.25 0.75 1.25 2.251.75 2.75 3.753.25

0

90

30

50

70

40

10

20

60

80

100

93412_10

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

I

R

(mA)

VR (V)

100 200 300 400 500 600

0.00001

0.001

0.0001

0.01

0.1

93412_12

TJ = 150 °C

TJ = 25 °C

www.vishay.com

VS-100MT060WDF

Vishay Semiconductors

TJ = 25 °C

TJ = 125 °C

IC (mA)

(V)

geth

V

93412_07

4.5

4.0

3.5

3.0

0.2 1.00.3 0.4 0.6 0.80.5 0.7 0.9

Fig. 7 - Typical IGBT Gate Thresold Voltage

100

90

80

70

60

50

40

30

20

10

- Instantaneous Forward Current (A)

F

I

93412_08

0

0.5 1.0 1.5 2.0 2.5 3.0

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

VF - Anode to Cathode

Forward Voltage Drop (V)

Fig. 8 - Typical Diode Forward Voltage Characteristics of

Antiparallel Diode, t

= 500 μs

p

Fig. 10 - Typical PFC Diode Forward Voltage

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 5 10 15 20 25 30 35 40

93412_11

IF - Continuous Forward Current (A)

Fig. 11 - Maximum Continuous Forward Current vs.

Case Temperature PFC Diode

Revision: 01-Mar-12

Fig. 9 - Maximum Continuous Forward Current vs.

Case Temperature Antiparallel Diode

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Fig. 12 - Typical FRED Pt Chopper Diode Reverse Current vs.

5

For technical questions, contact: [e-mail]

Reverse Voltage

Document Number: 93412

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Energy (mJ)

IC (A)

020 608010040 120

0

93412_13

2.0

1.2

1.6

0.8

0.4

E

on

E

off

Switching Time (ns)

IC (A)

020 8040 10060 120

10

93412_15

1000

100

t

d(off)

t

d(on)

t

f

t

r

t

rr

(ns)

dIF/dt (A/μs)

100 200 300 400

93412_17

500

100

150

250

200

TJ = 25 °C

TJ = 125 °C

I

rr

(A)

dIF/dt (A/μs)

100 200 300 400

93412_18

500

0

25

20

10

15

5

TJ = 25 °C

TJ = 125 °C

VS-100MT060WDF

Vishay Semiconductors

TJ = 125 °C, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 

Fig. 13 - Typical IGBT Energy Loss vs. I

5

4

3

E

off

2

Energy (mJ)

1

E

on

C

1000

100

t

f

t

r

t

d(off)

t

d(on)

Switching Time (ns)

10

010 304020 50

93412_16

Rg (Ω)

Fig. 16 - Typical IGBT Switching Time vs. R

I

= 100 A, VCE = 360 V, VGE = 15 V, L = 500 μH

C

, TJ = 125 °C

g

93412_14

Revision: 01-Mar-12

0

0 1020304050

Rg (Ω)

Fig. 14 - Typical IGBT Energy Loss vs. R

I

= 100 A, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 

C

Fig. 15 - Typical IGBT Switching Time vs. I

TJ = 125 °C, VDD = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 

, TJ = 125 °C

g

C

Fig. 17 - Typical t

Fig. 18 - Typical I

6

Antiparallel Diode vs. dIF/dt

rr

V

= 200 V, IF = 60 A

rr

Antiparallel Diode vs. dIF/dt

rr

V

= 200 V, IF = 60 A

rr

Document Number: 93412

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

(nC)

t

rr

(ns)

dIF/dt (A/μs)

100 200 300 400

93412_20

500

30

80

180

130

TJ = 25 °C

TJ = 125 °C

I

rr

(A)

dIF/dt (A/μs)

100 200 300 400

93412_21

500

0

20

10

15

5

TJ = 25 °C

TJ = 125 °C

Q

rr

(nC)

dIF/dt (A/μs)

100 200 300 400

93412_22

500

0

1100

400

600

900

1000

200

300

500

700

800

100

TJ = 25 °C

TJ = 125 °C

0.001

0.01

0.1

1

0.00001

93412_23

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

10

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

rr

Q

93412_19

www.vishay.com

1500

TJ = 125 °C

1200

900

600

300

100 200 300 400

Fig. 19 - Typical Qrr Antiparallel Diode vs. dIF/dt

TJ = 25 °C

dIF/dt (A/μs)

V

= 200 V, IF = 60 A

rr

500

Vishay Semiconductors

Fig. 21 - Typical I

V

= 200 V, IF = 60 A

rr

VS-100MT060WDF

Chopper Diode vs. dIF/dt

rr

Revision: 01-Mar-12

Fig. 20 - Typical t

Chopper Diode vs. dIF/dt

rr

V

= 200 V, IF = 60 A

rr

Fig. 23 - Maximum Thermal Impedance Z

7

Fig. 22 - Typical Q

Characteristics (IGBT)

thJC

Chopper Diode vs. dIF/dt

rr

V

= 200 V, IF = 40 A

rr

Document Number: 93412

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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93412_24

Z

thJC

-

Thermal Impedance

Junction to Case (°C/W)

t1 - Rectangular Pulse Duration (s)

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10

D = 0.02
D = 0.01
DC

D = 0.05

D = 0.10

D = 0.20

D = 0.50

L

80 V

R

g

1000 V

D.U.T.

+

-

R

g

D.U.T.

R =

V

CC

I

CM

V

CC

+

-

VS-100MT060WDF

Vishay Semiconductors

Fig. 24 - Maximum Thermal Impedance Z

0

1K

D.U.T.

Fig. C.T.1 - Gate Charge Circuit (Turn-Off)

Characteristics (PFC Diode)

thJC

Driver

L

V

CC

+

-

D.U.T.

D

+

C

900 V

-

Fig. C.T.3 - S.C. SOA Circuit

Diode clamp/

D.U.T.

-

- 5 V

+

R

g

L

D.U.T./

Driver

+

-

V

CC

Fig. C.T.2 - RBSOA Circuit

Revision: 01-Mar-12

Fig. C.T.5 - Resistive Load Circuit

For technical questions, contact: [e-mail]

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Fig. C.T.4 - Switching Loss Circuit

8

Document Number: 93412

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CIRCUIT CONFIGURATION

DIMENSIONS in millimeters

VS-100MT060WDF

Vishay Semiconductors

E1
F1

Q1

D1

A7
E6

E7

Th

G6

I1
L1

D2

A1
B1

Q4

G7

M7

D3

M2
M3

D4

19.8 ± 0.1

12 ± 0.3 12.1± 0.3

2.5 ± 0.1

0.8 Ra

1.3 7.4

45°

Ø 2.1(X4)

39.5 ± 0.3

Ø 1.1± 0.025

45 ± 0.1

63.5 ± 0.15

48.7± 0.3

BACDEF LG HI M

1

2

3

4

5

6

7

6

12

18

24

30

3.0

2.1

1.5

z detail

6

3

17± 0.3

7.6

22.8

15.2

X

5.2

R 2.6 (X2)

Use Self Tapping Screw

or M2.5 x X.
e.g. M2.5 x 6 or M2.5 x 8

according to Pcb

thickness used

21.1 ± 0.5

33.2 ± 0.3

31.8 ± 0.15

4.1

Diam. 5 (X4)

27.5 ± 0.3

PINS POSITION

WITH TOLERANCE

Ø 0.6

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95383

Revision: 01-Mar-12

9

Document Number: 93412

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DIMENSIONS in millimeters

48.7 ± 0.3

A

1

2

3

4

5

6

7

BCDE GH I LM

19.8 ± 0.1

45°

Ø 2.1 (x 4)

7.4

22.8

15.2

7.6

5.2

7

1.3

6

12

18

24

30

20

R2.6 (x 2)

Ø 1 ± 0.025

F

Pins position
with tolerance

Ø 0.5

Ø 5 (x 4)

21.1

+ 0.5

- 0.2

22.8 ± 0.5

Ground pin

31.8 ± 0.15

33.2 ± 0.3

27.5 ± 0.3

4.1

39.5 ± 0.3 12 ± 0.312 ± 0.3

2.5 ± 0.1

17 ± 0.3

3

0.8 Ra

Ø 1.1 ± 0.025

45 ± 0.1

63.5 ± 0.15

1.5

Use self taping screw
or M2.5 x X.
e.g. M2.5 x 6 or M2.5 x 8
according to PCB thickness used

z detail

3.0

2.1

6

Outline Dimensions

Vishay Semiconductors

MTP - Full Pin

Document Number: 95383 For technical questions, contact: [e-mail]
Revision: 19-Nov-10 1

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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

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Document Number: 91000