C&H Technology VS080DM12CCB User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
Vishay High Power Products
Standard Recovery Diodes
VS080DM12CCB
PRODUCT SUMMARY
Junction size Square 80 x 80 mils
Wafer size 4"
class 1200 V
V
RRM
Passivation process Glassivated MOAT
Reference Vishay HPP
packaged part
4EWS..S Series
FEATURES
• 100 % tested at probe
• Bondable top metal
• Wafer in box, and die in chip carrier
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage V
Maximum repetitive reverse voltage V
Note
(1)
Nitrogen flow on die edge
RRM
TJ = 25 °C, IF = 4 A 1.1
FM
(1)
TJ = 25 °C, I
= 10 µA 1200
RRM
V
MECHANICAL DATA
Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (5 µm)
Chip dimensions 80 x 80 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 290 µm ± 10 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
RoHS
COMPLIANT
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95151
Packaging information http://www.vishay.com/doc?95166
Document Number: 93880 For technical questions, contact: die-wafer@vishay.com
Revision: 27-Mar-08 1
VS 080 D M 12 C CB
5132467
1 - Vishay HPP device
2 - Chip dimension in mils
3 - Type of device: D = Wire bondable standard recovery diode
4 - Passivation process: M = Glassivated MOAT
- Voltage code x 100 = V
5
6
- Metallization: C = Aluminum (anode) - silver (cathode)
- CB = Probed uncut die (wafer in box)
7
None = Probed die in chip carrier
LINKS TO RELATED DOCUMENTS
RRM
www.vishay.com
Loading...