C&H Technology UFL200FA60P User Manual

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1-800-274-4284
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Please contact the C&H Technology team for the following questions -
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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
SOT-227
2
4
3
Vishay High Power Products
INSULATED ULTRAFAST
RECTIFIER MODULE
FEATURES
• Two Fully Independent Diodes
• Ceramic Fully Insulated Package (V
1
• Ultrafast Reverse Recovery
• Ultrasoft Reverse Recovery Current Shape
• Low Forward Voltage
• Optimized for Power Conversion: Welding and Industrial SMPS Applications
• Industry Standard Outline
• Plug-in Compatible with other SOT-227 Packages
• Easy to Assemble
• Direct Mounting to Heatsink
• TOTALLY LEAD-FREE
UFL200FA60P
= 2500V AC)
ISOL
PRODUCT SUMMARY
t
rr
I
F(AV)
@ T
C
V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETERS MAX UNITS
V
I
F
I
FSM
P
V
T
R
D
ISOL
J
Collector-to-Anode Voltage 600 V
Continuos Forward Current, per Diode @ TC = 85°C 144 A
Single Pulse Forward Current, per Diode @ TC = 25°C 1000
Maximum Power Dissipation, per Module @ TC = 85°C 360 W
Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V
Operating Junction and Storage Temperatures -55 to 175 °C
102ns
200A
105°C
600V
DESCRIPTION
The UFL200FA60P insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life-time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC-DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/ RFI.
Document Number: I27322 Revision: 30-Oct-07
www.vishay.com
1
UFL200FA60P
Vishay Semiconductor Italy
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (UNLESS OTHERWISE SPECIFIED)
PARAMETERS MIN TYP MAX UNITS TETS CONDITIONS
V
BR
Cathode Anode 600 - - V IR = 100μA
Breakdown Voltage
V
FM
Forward Voltage - 1.28 1.44 V IF = 100A
- 1.48 1.66 V IF = 200A
- 1.13 1.24 V IF = 100A, TJ = 125°C
- 1.37 1.55 V IF = 200A
I
RM
Reverse Leakage Current - 5 100 μAVR = VR Rated
- 0.2 1 mA TJ = 175°C, VR = VR Rated
C
T
Junction Capacitance - 80 - pF VR = 600V
DYNAMIC RECOVERY CHARACTERISTICS @ TJ = 25°C (UNLESS OTHERWISE SPECIFIED)
PARAMETERS MIN TYP MAX UNITS TETS CONDITIONS
t
rr
I
RRM
Reverse Recovery Time 102 141 ns TJ = 25°C
- 210 293 TJ = 125°C
Peak Recovery Current - 9 12 A TJ = 25°C
I
= 50A
F
VR = 200V
diF /dt = 200A/μs
-2125 TJ = 125°C
Q
rr
Reverse Recovery Charge - 443 744 nC TJ = 25°C
- 2086 3355 TJ = 125°C
THERMAL-MECHANICAL SPECIFICATIONS
PARAMETERS MIN TYP MAX Units
R
thJC
Junction to Case, Single Leg Conducting 0.5 °C/W
Both Leg Conducting 0.25 K/W
R
thCS
Case to Heat Sink, Flat, Greased Surface 0.05
Wt Weight 30 g
T Mounting Torque 1.3 (N•m)
www.vishay.com 2
Document Number: I27322
Revision 30-Oct-07
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