C&H Technology UFL200FA60P User Manual

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Suite 108
Minnetonka, MN 55345

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SOT-227

2

4

3

Vishay High Power Products

INSULATED ULTRAFAST

RECTIFIER MODULE

FEATURES

• Two Fully Independent Diodes

• Ceramic Fully Insulated Package (V

1

• Ultrafast Reverse Recovery

• Ultrasoft Reverse Recovery Current Shape

• Low Forward Voltage

• Optimized for Power Conversion: Welding and
Industrial SMPS Applications

• Industry Standard Outline

• Plug-in Compatible with other SOT-227 Packages

• Easy to Assemble

• Direct Mounting to Heatsink

• TOTALLY LEAD-FREE

UFL200FA60P

= 2500V AC)

ISOL

PRODUCT SUMMARY

t

rr

I

F(AV)

@ T

C

V

R

ABSOLUTE MAXIMUM RATINGS

PARAMETERS MAX UNITS

V

I

F

I

FSM

P

V

T

R

D

ISOL

J

Collector-to-Anode Voltage 600 V

Continuos Forward Current, per Diode @ TC = 85°C 144 A

Single Pulse Forward Current, per Diode @ TC = 25°C 1000

Maximum Power Dissipation, per Module @ TC = 85°C 360 W

Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V

Operating Junction and Storage Temperatures -55 to 175 °C

102ns

200A

105°C

600V

DESCRIPTION

The UFL200FA60P insulated modules integrate two
state-of-the-art International Rectifier's Ultrafast
recovery rectifiers in the compact, industry standard
SOT-227 package. The planar structure of the diodes,
and the platinum doping life-time control, provide a
Ultrasoft recovery current shape, together with the
best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed
not to be predominant portion of the total energy, such
as in the output rectification stage of Welding machines,
SMPS, DC-DC converters. Their extremely optimized
stored charge and low recovery current reduce both
over dissipation in the switching elements (and
snubbers) and EMI/ RFI.

Document Number: I27322
Revision: 30-Oct-07

www.vishay.com

1

UFL200FA60P

Vishay Semiconductor Italy

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (UNLESS OTHERWISE SPECIFIED)

PARAMETERS MIN TYP MAX UNITS TETS CONDITIONS

V

BR

Cathode Anode 600 - - V IR = 100μA

Breakdown Voltage

V

FM

Forward Voltage - 1.28 1.44 V IF = 100A

- 1.48 1.66 V IF = 200A

- 1.13 1.24 V IF = 100A, TJ = 125°C

- 1.37 1.55 V IF = 200A

I

RM

Reverse Leakage Current - 5 100 μAVR = VR Rated

- 0.2 1 mA TJ = 175°C, VR = VR Rated

C

T

Junction Capacitance - 80 - pF VR = 600V

DYNAMIC RECOVERY CHARACTERISTICS @ TJ = 25°C (UNLESS OTHERWISE SPECIFIED)

PARAMETERS MIN TYP MAX UNITS TETS CONDITIONS

t

rr

I

RRM

Reverse Recovery Time 102 141 ns TJ = 25°C

- 210 293 TJ = 125°C

Peak Recovery Current - 9 12 A TJ = 25°C

I

= 50A

F

VR = 200V

diF /dt = 200A/μs

-2125 TJ = 125°C

Q

rr

Reverse Recovery Charge - 443 744 nC TJ = 25°C

- 2086 3355 TJ = 125°C

THERMAL-MECHANICAL SPECIFICATIONS

PARAMETERS MIN TYP MAX Units

R

thJC

Junction to Case, Single Leg Conducting 0.5 °C/W

Both Leg Conducting 0.25 K/W

R

thCS

Case to Heat Sink, Flat, Greased Surface 0.05

Wt Weight 30 g

T Mounting Torque 1.3 (N•m)

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2

Document Number: I27322

Revision 30-Oct-07

UFL200FA60P

10

100

1000

10000

10 100 1000

T = 25˚C

J

0

1

0.0001 0.001 0.01 0.1 1 10

Vishay Semiconductor Italy

1000

(A)

F

100

Tj = 175°C

10

Tj = 125°C

Instantaneous Forward Current - I

1000

175°C

100

( μA)

R

10

1

0.1

Reverse Current - I

0.01

0.001
100 200 300 400 500 600

Reverse Voltage - VR (V)

(pF)

T

125C

25°C

Tj = 25°C

1

0.0 0.5 1.0 1.5 2.0 2.5

Forward Voltage Drop - VF (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

(per diode)

(°C/W)

thJC

0.1

Single Pulse

(Thermal Resistance)

Thermal Impedance Z

Junction Capacitance - C

Reverse Voltage - VR (V)

Fig. 3 - Typical Junction Capacitance

Vs. Reverse Voltage

P

DM

t

1

t

2

Notes:

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

.01

t 1, Rectangular Pulse Duration (Seconds)

Fig. 4 - Max. Thermal Impedance Z

Document Number: I27322
Revision 30-Oct-07

Characteristics (per diode)

thJC

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3

UFL200FA60P

Vishay Semiconductor Italy

200

150

100

50

Square wave (D=0.50)
80% rated Vr applied

Allowable Case Temperature (°C)

see note

DC

0

0 50 100 150 200 250

Average Forward Current - I

Fig. 5 - Max. Allowable Case Temperature

Vs. Average Forward Current (per leg)

250

Vr = 200V

F(AV)

(A)

180

150

120

RMS Limit

90

60

30

Average Power Loss ( W )

0

DC

D = 0.01
D = 0.02
D = 0.05

D = 0.1
D = 0.2

0 25 50 75 100 125 150

Average Forward Current - I

F(AV)

(A)

Fig. 6 - Forward Power Loss Characteristics

(per leg)

3500

Vr = 200V

3000

200

150

If = 50A, 125°C

trr ( ns )

di

/dt (A/μs )

F

If = 50A, 25°C

100

50

100 1000

Fig. 7 - Typical Reverse Recovery time vs. di

2500

2000

1500

Qrr ( nC )

1000

500

0

If = 50A, 125°C

If = 50A, 25°C

100 1000

di F /dt (A/μs )

/dt

F

Fig. 8 - Typical Stored Charge vs. di

/dt

F

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4

Document Number: I27322

Revision 30-Oct-07

50

40

30

Irr ( A )

20

10

UFL200FA60P

Vishay Semiconductor Italy

Vr = 200V

If = 50A, 125°C

If = 50A, 25°C

dif/dt
ADJUST

V = 200V

L = 70µH

G

R

0

100 1000

di F /dt (A/μs )

Fig. 9 - Typical Stored Current vs. di

0

Ω

0.01

D.U.T.

D

IRFP250

S

1. diF/dt - Rate of change of current through
zero crossing

2. I

- Peak reverse recovery current

RRM

- Reverse recovery time measured from

3. t

rr

zero crossing point of negative going I
point where a line passing through 0.75 I
and 0.50 I

RRM

/dt

F

I

F

1

di /dt

f

F

extrapolated to zero current

RRM

3

t

rr

t

a

2

to

t

b

Q

I

RRM

0.75

4. Qrr - Area under curve defined by
t

and I

rr

5. di

(rec) M

portion of t

rr

0.5

I

RRM

di(rec)M/dt

I

RRM

RRM

/ dt - Peak rate of change

of current during t

rr

4

5

t rr x I

Q

RRM

=

rr

2

b

Fig. 10 - Reverse Recovery Parameter Test

Circuit

Document Number: I27322
Revision 30-Oct-07

Fig. 11 - Reverse Recovery Waveform and Defini-

tions

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5

UFL200FA60P

Vishay Semiconductor Italy

SOT-227 PACKAGE DETAILS

Tube

QUANTITY PER TUBE IS 10
M4 SCREW AND WASHER INCLUDED

ORDERING INFORMATION TABLE

Device Code

1 - ULTRAFAST RECTIFIER
2 - Ultrafast Pt low V
3 - Current Rating (200 = 200A)
4 - Circuit Configuration (2 separate Diodes, parallel pin-out)
5 - Package Indicator (SOT-227 Standard Isolated Base)
6 - Voltage Rating (60 = 600V)
7 - P = Lead-Free

UF L 200 F A 60 P

1 5

24

F

63

7

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6

Document Number: I27322

Revision 30-Oct-07

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