C&H Technology UFB200CB40P User Manual

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1-800-274-4284
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Application
Assembly
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Anode Anode
1423
Base common cathode
PRODUCT SUMMARY
V
R
I
at TC = 146 °C per module
F(AV)
t
rr
Note
(1)
All 4 anode terminals connected
Vishay High Power Products
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
FEATURES
• Not insulated package
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Optimized for power conversion: welding and industrial SMPS applications
SOT-227
(1)
400 V
200 A
89 ns
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The UFB200CB40P not insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI.
UFB200CB40P
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
Operating junction and storage temperatures T
Notes
(1)
Both anode terminals connected; Maximum I
(2)
10 ms sine or 6 ms rectangular pulse
Document Number: 94276 For technical questions, contact: indmodules@vishay.com Revision: 16-Jul-09 1
current per leg 200 A to do not exceed the maximum temperature of terminals, see fig. 6
RMS
F
FSM
, T
J
R
(1)
D
TC = 140 °C 142
(2)
TC = 25 °C 1300
TC = 140 °C 368 W
Stg
400 V
A
- 55 to 175 °C
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UFB200CB40P
Vishay High Power Products
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
BR
FM
RM
Junction capacitance C
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
IR = 100 µA 400 - -
IF = 100 A - 1.11 1.34
I
= 100 A, TJ = 125 °C - 0.99 1.1
F
= 200 A - 1.3 1.6
I
F
I
= 200 A, TJ = 125 °C - 1.22 1.4
F
VR = VR rated - - 50 µA
T
= 175 °C, VR = VR rated - - 4 mA
J
VR = 400 V - 100 - pF
T
IF = 1.0 A, dIF/dt = 400 A/µs, VR = 30 V - 39 -
= 25 °C
J
= 125 °C - 184 235
T
J
TJ = 25 °C - 9 12
T
= 125 °C - 20 25
J
= 50 A
I
F
dI
/dt = 200 A/µs
F
V
= 100 V
R
- 89 136
TJ = 25 °C - 400 815
rr
T
= 125 °C - 1840 2940
J
V
nsT
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink, per module R
R
thJC
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
- - 0.19
°C/WJunction to case, both leg conducting - - 0.095
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94276
2 Revision: 16-Jul-09
UFB200CB40P
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
1000
100
TJ = 175 °C
= 125 °C
T
10
1
- Instantaneous Forward Current (A)
F
I
0 0.5 1.0 1.5 2.0 2.5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
J
= 25 °C
T
J
(Per Diode)
1000
T
J
= 25 °C
Vishay High Power Products
1000
100
10
1
0.1
- Reverse Current (µA)
R
I
0.01
0.001 0 50 100 150 200 250 300 350 400
Fig. 2 - Typical Values of Reverse Current vs.
T
T
VR - Reverse Voltage (V)
Reverse Voltage
= 175 °C
J
= 125 °C
J
= 25 °C
T
J
100
- Junction Capacitance (pF)
T
C
10
10 100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.75 D = 0.50 D = 0.33
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.25 D = 0.20
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics (Per Diode)
thJC
1000
10
Document Number: 94276 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 16-Jul-09 3
UFB200CB40P
Vishay High Power Products
180
160
140
120
100
80
Square wave (D = 0.50) 80 % rated V
60
40
20
0
0 400320 3602802402001601208040
See note (1)
I
F(AV)
Allowable Case Temperature (°C)
R
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
350
300
250
200
150
100
Average Power Loss (W)
50
0
0 20406080 100 120 140 160 180 200 220
I
- Average Forward Current (A)
F(AV)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
applied
DC
DC
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
250
230
210
190
170
150
(ns)
rr
t
130
RMS limit
110
90
70
50
100 1000
Fig. 7 - Typical Reverse Recovery Time vs. dI
4000
3500
3000
2500
2000
(nC)
rr
Q
1500
1000
500
0
100 1000
Fig. 8 - Typical Reverse Recovery Charge vs. dI
T
VR = 100 V
= 50 A
I
F
= 25 °C
J
T
= 125 °C
J
dIF/dt (A/µs)
dIF/dt (A/µs)
VR = 100 V
= 50 A
I
F
T
= 125 °C
J
T
= 25 °C
J
/dt
F
/dt
F
50
V
= 100 V
R
= 50 A
I
F
40
30
T
= 125 °C
J
(A)
RR
I
20
10
0
100 1000
T
J
= 25 °C
dIF/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Current vs. dI
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
R
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94276
4 Revision: 16-Jul-09
UFB200CB40P
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
V
= 200 V
R
0.01 Ω
L = 70 µH
D.U.T.
(3)
a
(2)
D
IRFP250
S
t
rr
t
b
I
RRM
0.75 I
(4) Q
- area under curve defined by t
rr
and I
RRM
(5) dI current during t
/dt - peak rate of change of
(rec)M
dIF/dt
adjust
G
Fig. 10 - Reverse Recovery Parameter Test Circuit
I
F
0
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
t
Vishay High Power Products
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
=
rr
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
rr
RRM
dI
Fig. 11 - Reverse Recovery Waveform and Definitions
Document Number: 94276 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 16-Jul-09 5
UFB200CB40P
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
UF B 200 C B 40 P
1 - Ultrafast rectifier
2 - Ultrafast Pt diffused
3 - Current rating (200 = 200 A)
4 - Circuit configuration (2 common cathode diodes)
5 - Package indicator (SOT-227 standard not insulated)
6 - Voltage rating (40 = 400 V)
7 - P = Lead (Pb)-free
Quantity per tube is 10 pcs, M4 screw and washer included
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 200 A
51324
67
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
www.vishay.com For technical questions, contact: indmodules@vishay.com 6 Revision: 16-Jul-09
Document Number: 94276
Legal Disclaimer Notice
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Vishay

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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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