C&H Technology UFB120FA40P User Manual

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SOT-227
1
2
Insulated Ultrafast
Rectifier Module, 120 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package (V
= 2500 VAC)
ISOL
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
• Optimized for power conversion: welding and industrial SMPS applications
4
3
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• Lead (Pb)-free
• Designed and qualified for industrial level
UFB120FA40P
Vishay High Power Products
RoHS
COMPLIANT
DESCRIPTION
The UFB120FA40P insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a
PRODUCT SUMMARY
V
R
I
at TC = 65 °C 120 A
F(AV)
t
rr
400 V
35 ns
ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
RMS isolation voltage V
Operating junction and storage temperatures T
J
F
FSM
ISOL
, T
R
TC = 65 °C 60
TC = 25 °C 800
D
Stg
TC at 90 °C 96 W
Any terminal to case, t = 1 minute 2500 V
400 V
A
- 55 to 150 °C °C
Document Number: 94086 For technical questions, contact: ind-modules@vishay.com Revision: 25-Apr-08 1
www.vishay.com
UFB120FA40P
Vishay High Power Products
Insulated Ultrafast
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
BR
FM
RM
Junction capacitance C
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
IR = 100 µA 400 - -
IF = 60 A - 1.16 1.37
I
= 60 A, TJ = 150 °C - 0.96 1.13
F
VR = VR rated - - 0.1
T
= 150 °C, VR = VR rated - - 1
J
VR = 400 V - 67 - pF
T
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 30 35
= 25 °C
J
T
= 125 °C - 128 -
J
TJ = 25 °C - 7.4 -
T
= 125 °C - 17.8 -
J
TJ = 25 °C - 240 -
rr
T
= 125 °C - 1139 -
J
I
= 50 A
F
/dt = 200 A/µs
dI
F
= 200 V
V
R
-65-
V
mA
nsT
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single diode conducting
Case to heatsink R
R
thJC
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
- 0.99 1.24
°C/WJunction to case, both diodes conducting - 0.49 0.62
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94086
2 Revision: 25-Apr-08
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