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SOT-227
Insulated Ultrafast
Rectifier Module, 120 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
= 2500 VAC)
ISOL
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
4
3
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL E78996 approved
• Totally lead (Pb)-free
• Designed and qualified for industrial level
UFB120FA20P
Vishay High Power Products
RoHS
COMPLIANT
DESCRIPTION
The UFB120FA20P insulated modules integrate two state of
the art Vishay HPP ultrafast recovery rectifiers in the
compact, industry standard SOT-227 package. The planar
PRODUCT SUMMARY
V
R
at TC = 90 °C 120 A
I
F(AV)
t
rr
200 V
28 ns
structure of the diodes, and the platinum doping life time
control, provide a ultrasoft recovery current shape, together
with the best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not to
be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
RMS isolation voltage V
Operating junction and storage temperatures T
J
F
FSM
ISOL
, T
R
TC = 90 °C 60
TC = 25 °C 850
D
Stg
TC = 90 °C 110 W
Any terminal to case, t = 1 min 2500 V
200 V
A
- 55 to 150 °C
Document Number: 94522 For technical questions, contact: ind-modules@vishay.com
Revision: 07-May-08 1
www.vishay.com

UFB120FA20P
Vishay High Power Products
Insulated Ultrafast
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
BR
FM
RM
Junction capacitance C
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
IR = 100 µA 200 - -
IF = 60 A - 0.96 1.13
= 60 A, TJ = 150 °C - 0.79 0.90
I
F
VR = VR rated - - 100 µA
= 150 °C, VR = VR rated - - 1.0 mA
T
J
VR = 200 V - 105 - pF
T
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - - 28
= 25 °C
J
T
= 125 °C - 64 -
J
TJ = 25 °C - 4.0 -
T
= 125 °C - 8.2 -
J
= 50 A
I
F
/dt = 200 A/µs
dI
F
= 100 V
V
R
- 32-
TJ = 25 °C - 64 -
rr
T
= 125 °C - 263 -
J
V
nsT
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case,
single diode conducting
Junction to case,
R
thJC
both diodes conducting
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight - 30- g
Mounting torque -1.3 -Nm
-0.81.1
- 0.4 0.55
K/W
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94522
2 Revision: 07-May-08