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D-55
PRODUCT SUMMARY
I
F(AV)
Vishay High Power Products
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
FEATURES
• Electrically isolated base plate
40 to 110 A
• Types up to 1200 V
• 3500 V
isolating voltage
RMS
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
• RoHS compliant
• Designed and qualified for industrial level
DESCRIPTION
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
RRM
T..HF Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS T40HF T70HF T85HF T110HF UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
2
I
√ t 16 300 70 700 148 700 204 300 A 2√ s
V
RRM
T
J
T
C
50 Hz 570 1200 1700 2000
60 Hz 600 1250 1800 2100
50 Hz 1630 7100 14 500 20 500
60 Hz 1500 6450 13 500 18 600
40 70 85 110 A
85 85 85 85 °C
63 110 134 173 A
A
A2s
100 to 1200 V
- 40 to 150 °C
Document Number: 93587 For technical questions, contact: ind-modules@vishay.com
Revision: 12-Jun-08 1
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T..HF Series
Vishay High Power Products
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM REPETITIVE
TYPE
NUMBER
VOLTAGE
CODE
RRM
PEAK REVERSE VOLTAGE
V
10 100 150
20 200 300
T40HF..
T70HF..
T85HF..
T110HF..
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle
forward, non-repetitive
surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√ t for fusing I 2√ t t = 0.1 to 10 ms, no voltage reapplied 16 300 70 700 148 700 204 300 A 2√ s
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of
forward slope resistance
High level value of
forward slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
V
F(TO)1
V
F(TO)2
r
r
180° conduction, half sine wave
63 110 134 173 A
t = 10 ms
t = 8.3 ms 600 1250 1800 2100
t = 10 ms
t = 8.3 ms 500 1050 1500 1780
t = 10 ms
t = 8.3 ms 1500 6450 13 500 18 600
t = 10 ms
t = 8.3 ms 1050 4570 9600 13 200
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
f1
(I > π x I
f2
IFM = π x I
t
FM
= 400 µs square pulse
p
Average power = V
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
< I < π x I
F(AV)
), TJ maximum 0.84 0.95 0.90 0.86
F(AV)
< I < π x I
F(AV)
), TJ maximum 3.1 1.7 1.08 1.12
F(AV)
, TJ = 25 °C,
F(AV)
F(TO)
Sinusoidal
half wave,
initial T
T
x I
F(AV)
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
40 70 85 110 A
85 85 85 85 °C
570 1200 1700 2000
480 1000 1450 1700
=
J
maximum
J
1630 7100 14 500 20 500
1150 5000 10 500 14 500
), TJ maximum 0.66 0.76 0.68 0.68
F(AV)
), TJ maximum 4.3 2.4 1.76 1.56
F(AV)
1.30 1.35 1.27 1.35 V
F(RMS)
2
)
+ rf x (I
I
MAXIMUM
RRM
AT T
= 25 °C
J
µA
100
A
A
V
mΩ
2
s
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 93587
2 Revision: 12-Jun-08
T..HF Series
Power Rectifier Diodes (T-Modules),
Vishay High Power Products
40 A/70 A/85 A/110 A
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS
Maximum peak reverse
leakage current
RMS isolation voltage V
I
RRM
ISOL
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
Mounting torque,
± 10 %
Approximate weight See dimensions - link at the end of datasheet 54 g
Case style T-module D-55
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
to heatsink
terminals M5 screw terminals 3 ± 10 %
, T
T
J
R
thJC
R
thCS
TJ = 150 °C 15 15 20 20 mA
50 Hz, circuit to base, all terminals shorted
T
= 25 °C, t = 1 s
J
Stg
DC operation 1.36 0.69 0.62 0.47
Mounting surface smooth, flat
and greased
Non-lubricated
threads
M3.5 mounting screws
3500 3500 3500 3500 V
- 40 to 150 °C
0.2
(1)
1.3 ± 10 %
K/W
Nm
ΔR CONDUCTION PER JUNCTION
DEVICES
T40HF 0.12 0.14 0.18 0.27 0.46 0.09 0.15 0.20 0.28 0.46
T70HF 0.09 0.11 0.14 0.20 0.35 0.07 0.11 0.15 0.21 0.35
T85HF 0.08 0.09 0.12 0.18 0.31 0.06 0.10 0.13 0.19 0.31
T110HF 0.05 0.07 0.09 0.14 0.23 0.05 0.08 0.10 0.15 0.24
Note
• Table shows the increment of thermal resistance R
Document Number: 93587 For technical questions, contact: ind-modules@vishay.com
Revision: 12-Jun-08 3
SINUSOIDAL CONDUCTION AT T
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM
J
when devices operate at different conduction angles than DC
thJC
UNITS
K/W
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