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TBSD__210H
r
Phase Control Thyristo
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com 2115 Amperes 4500 Volts
The TBSD is a high voltage, high current disc
pack SCR employing a high di/dt gate structure.
This gate design allows the SCR to be reliably
operated at high di/dt and dv/dt conditions in
various phase control applications.
FEATURES:
Low On-State Voltage
High di/dt Capability
High dv/dt Capability
Hermetic Ceramic Package
Excellent Surge and I
APPLICATIONS:
DC Power Supplies
ORDERING INFORMATION Motor Controls
AC Soft-Starters
Select the complete 12 digit Part Number using the table below.
EXAMPLE: TBSD45210HDH is a 4500V - 2115A SCR with 250ma
IGT and 12 inch gate and cathode potential leads.
PART
Voltage
Rating
V
DRM-VRRM
Voltage
Code
Current
Rating
I
tavg
Current
Code Turn-Off Gate Leads
Tq
I
GT
TBSD 4500 45 2115 21 0 H
4200 42
4000 40
600us 250ma 12"
(typ.) (max)
2
t Ratings
Revised: 2/17/2006
Page 1
TBSD__210H
r
Phase Control Thyristo
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com 2115 Amperes 4500 Volts
Absolute Maximum Ratings
Characteristic Symbol Rating Units
Repetitive Peak Voltage
=70°C
C
=55°C
C
=70°C
C
=55°C
C
Average On-State Current, T
RMS On-State Current, T
Average On-State Current, T
RMS On-State Current, T
Peak One Cycle Surge Current, 60Hz, V
Peak One Cycle Surge Current, 50Hz, V
Fuse Coordination I
Fuse Coordination I
2
t, 60Hz I2t
2
t, 50Hz I2t
=0V I
R
=0V I
R
V
DRM-VRRM
I
T(Avg.)
I
T(RMS)
I
T(Avg.)
I
T(RMS)
TSM
TSM
4000 - 4500 Volts
2115 A
3322 A
2410 A
3786 A
33,600 A
31,678 A
4.70E+06
5.02E+06
A2s
A2s
Critical Rate-of-Rise of On-State Current di/dt 100 A/us
Repetitive .67•VDRM
Critical Rate-of-Rise of On-State Current di/dt 200 A/us
Non-Repetitive .67•VDRM
Peak Gate Power, 100us
Average Gate Power
P
P
GM
G(avg)
16 Watts
5 Watts
Operating Temperature Tj -40 to+125 °C
Storage Temperature
T
Stg.
-50 to+150 °C
Approximate Weight 2.5 lb
Mounting Force 9000-10000 lbs
Information presented is based upon manufacturers testing and projected
capabilities. This information is subject to change without notice. The
manufacturer makes no claim as to suitability for use, reliability, capability or
future availability of this product.
1.13 Kg
40 - 44.5 KNewtons
Page 2
TBSD__210H
r
A
V
/
Phase Control Thyristo
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com 2115 Amperes 4500 Volts
Electrical Characteristics, Tj=25°C unless otherwise specified
Rating
Characteristic Symbol Test Conditions min typ max Units
Repetitive Peak Forward
Leakage Current
Repetitive Peak Reverse
Leakage Current
Peak On-State Voltage
V
Model, Low Level V
TM
VTM = V
+ r•I
O
TM
I
DRM
I
RRM
V
Tj=125°C, V
Tj=125°C, V
Tj=125°C, ITM=2000
TM
Tj=125°C 1.130 V
0
15% I
r
TM
- π•I
DRM
RRM
TM
=Rated
=Rated
250 ma
250 ma
1.70 V
2.75E-04 Ω
VTM Model, High Level V
VTM Model,
V
TM
VTM = V
4-Term A Tj=125°C
= A + B•Ln(ITM) +
C•(I
O
) + D•(ITM)
TM
+ r•I
TM
½
Turn-On Delay Time
Tj=125°C 1.274 V
0
r
B
π•I
15%ITM - I
TM
- I
TSM
TSM
C
D
VD = 0.5•V
t
d
DRM
3.5 us
2.46E-04 Ω
0.468
0.112
0.000249
-0.00253
Gate Drive: 40V - 20Ω
Turn-Off Time tq Tj=125°C 600 us
Reverse Recovery Current
Reverse Recovery Charge
dv/dt
(Crit)
Gate Trigger Current
Gate Trigger Voltage
Peak Reverse Gate Voltage
dv/dt = 20V/us to 80%
I
R(Rec)
Q
Tj=125°C 1500A -10A/us A
RR
dv/dt Tj=125°C Exp. Waveform 1000 V/us
=80% Rated
V
D
Tj=25°C VD = 12V
GT
GT
V
I
V
GRM
DRM
uCoul
30 150 250 ma
0.8 2.0 4.0 V
5V
Thermal Characteristics
Rating
Characteristic Symbol Test Conditions min typ max Units
Thermal Resistance
Junction to Case
Case to Sink
Thermal Impedance Model
ZΘjc(t) =
Σ(A(N)•(1-exp(-t
RΘ
RΘ
ZΘ
Double side cooled 0.009 0.010 °C/Watt
jc
Double side cooled 0.0015 0.002 °C/Watt
cs
Double side cooled
jc
Tau(N))))
where: N = 12 3 4
A(N) = 1.13E-04 7.51E-04 3.53E-03 5.61E-03
Tau(N) = 6.54E-04 1.48E-02 1.89E-01 1.20E+00
Page 3
TBSD__210H
r
Phase Control Thyristo
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com 2115 Amperes 4500 Volts
Maximum On-State Voltage Drop
6.0
5.0
Tj = 125°C
4.0
3.0
2.0
VTM (V)
1.0
0.0
100 1000 10000 100000
ITM (A)
Maximum On-State Power Dissipation
8000
7000
6000
5000
4000
3000
2000
Pavg (Watts)
1000
0
0 500 1000 1500 2000 2500 3000
Sinusoidal Waveform
60°
Iavg (A)
90°
120° 180°
CONDUCTION ANGLE
0° 180° 360°
MAXIMUM TRANSIENT THERMAL
IMPEDANCE
1.2E-02
1.0E-02
8.0E-03
6.0E-03
(°C/Watt)
4.0E-03
2.0E-03
Thermal Impedance
0.0E+00
0.001 0.01 0.1 1 10
Time (sec)
Maximum Allowable Case Temperature
Sinusoidal Waveform
130
120
110
100
90
80
Tc (°C)
70
60
50
0 500 1000 1500 2000 2500 3000
60°
90°
Iavg (A)
120°
CONDUCTION ANGLE
0° 180° 360°
180°
Maximum On-State Power Dissipation
Square Waveform
8000
7000
6000
5000
90°
60°
180°
120°
4000
3000
2000
Pavg (Watts)
1000
0
0 1000 2000 3000 4000
Iavg (A)
360°
CONDUCTION ANGLE
0° 180° 360°
Page 4
Maximum Allowable Case Temperature
Square Waveform
130
120
110
100
90
80
Tc (°C)
70
60
50
60°
90°
120°
0 1000 2000 3000 4000
Iavg (A)
CONDUCTION ANGLE
0° 180° 360°
180°
360°
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