C&H Technology ST780CLPbF User Manual

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ST780CLPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 1350 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AC (B-PUK)

• Lead (Pb)-free

TO-200AC (B-PUK)

PRODUCT SUMMARY

I

T(AV)

1350 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 24 400

60 Hz 25 600

50 Hz 2986

60 Hz 2726

Typical 150 µs

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

1350 A

55 °C

2700 A

25 °C

A

kA2s

400 to 600 V

- 40 to 125 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST780C..L

Document Number: 94415 For technical questions, contact: [e-mail]
Revision: 06-May-08 1

VOLTAGE

CODE

04 400 500

06 600 700

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

NON-REPETITIVE PEAK VOLTAGE

V

RSM

, MAXIMUM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

www.vishay.com

MAXIMUM

mA

80

ST780CLPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 1350 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 29 860 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 2700

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 25 600

t = 10 ms

t = 8.3 ms 21 500

t = 10 ms

t = 8.3 ms 2726

t = 10 ms

t = 8.3 ms 1928

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 3600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.31 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.90

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.13

T(AV)

), TJ = TJ maximum 0.80

T(AV)

), TJ = TJ maximum 0.14

T(AV)

1350 (500) A

55 (85) °C

24 400

20 550

2986

2112

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

150

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 80 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94415

2 Revision: 06-May-08

ST780CLPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 1350 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C

= 25 °C 1.8 3.0

J

T

= 125 °C 1.1 -

J

Maximum required gate
trigger/current/voltage are the
lowest value which will trigger
all units 12 V anode to cathode
applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

2.0

20

5.0

200 -

2.5

-

10 mA

0.25 V

UNITS

W

mAT

V

VT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.073

DC operation double side cooled 0.031

DC operation single side cooled 0.011

DC operation double side cooled 0.006

Mounting force, ± 10 %

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

ΔR

CONDUCTION ANGLE

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.009 0.009 0.006 0.006

120° 0.011 0.011 0.011 0.011

90° 0.014 0.014 0.015 0.015

= TJ maximum K/W

T

J

60° 0.020 0.020 0.021 0.021

30° 0.036 0.036 0.036 0.036

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

Document Number: 94415 For technical questions, contact: [e-mail]
Revision: 06-May-08 3

- 40 to 125

- 40 to 150

14 700
(1500)

°C

K/W

N

(kg)

www.vishay.com

ST780CLPbF Series

Vishay High Power Products

130

120

110

100

90

80

70

60

50

40

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 200 400 600 800 1000 1200 1400

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

ST7 8 0 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W

thJ-hs

Conduction Angle

30°

60°

90°

120°

ST7 8 0 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W

thJ-hs

Cond uc tion Period

30°

60°

90°

120°

180°

Phase Control Thyristors

(Hockey PUK Version), 1350 A

130

120

110

100

90

80

70

60

50

Maximum Allowable Heatsink Temperature (°C)

2500

2000

1500

1000

Maximum Average On-state Power Loss (W)

40

30

20

500

0

180°

DC

ST7 8 0 C . . L Se r ie s
(Double Side Cooled)
R (DC) = 0.031 K/ W

thJ-hs

Conduct ion Period

30°

60°

90°

120°

180°

DC

0 500 10 00 1500 2000 2500 3000

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

RM S Li m i t

Conduction Angle

ST780C..L Series
T = 125°C

J

0 400 800 1200 1600 2000

Average On-state Current (A)

Fig. 5 - On-State Power Loss Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 400 800 120016002000

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

ST780C..L Series
(Double Side Cooled)
R (DC ) = 0.031 K/ W

thJ-hs

Conduction Angle

30°

60°

90°

120°

180°

Fig. 3 - Current Ratings Characteristics

3500

3000

2500

2000

1500

1000

500

Maximum Average On-sta te Power Loss (W)

DC
180°
120°

90°
60°
30°

RM S Li m i t

Conduction Period

ST780C..L Serie s
T = 125°C

J

0

0 500 1000 1500 2000 2500 3000

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94415

4 Revision: 06-May-08

ST780CLPbF Series

Phase Control Thyristors

(Hockey PUK Version), 1350 A

22000

20000

18000

16000

14000

12000

Peak Half Sine Wave On -st a t e Current (A)

10000

At Any Rat ed Loa d Cond it ion And Wit h

Rat ed V Applied Follow ing Surge.

RRM

ST7 80 C . . L Se r i e s

110100

Number Of Eq ual Amplitud e Ha lf Cyc le Current Pulses (N)

Init ial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10000

Vishay High Power Products

26000

24000

22000

20000

18000

16000

14000

12000

Peak Half Sine Wave On-sta te Current (A)

10000

Maximum Non Repetitive Surge Current

Versus Pulse Train Durat ion. Control

Of Conduction May Not Be Maintained.

ST7 80 C . . L Se r i e s

0.01 0.1 1

Pulse Train Duration (s)

Init ia l T = 125°C

No Voltage Reapplied
Ra t e d V Re a p p l ie d

RRM

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

J

T = 2 5 ° C

1000

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2. 5

Instantaneous On-state Voltage (V)

J

T = 12 5° C

J

ST7 8 0 C . . L Se r i e s

Fig. 9 - On-State Voltage Drop Characteristics

0.1

Steady State Value

R = 0.073 K/ W

thJ-hs

thJ-hs

(Single Side Cooled)

R = 0.031 K/ W

thJ-hs

(Double Side Cooled)

(DC Operation)

0.01

ST7 8 0 C . . L Se r i e s

0.001

Transient Thermal Impedance Z (K/ W)

0.001 0.01 0.1 1 10

Sq u a r e W a v e P u l se D u r a t i o n ( s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Document Number: 94415 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 06-May-08 5

ST780CLPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/ dt : 10V, 10oh m s

10

tr<=1 µs

1

Insta nt a n e o us Ga te Vo lt ag e (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

IGD

Phase Control Thyristors

(Hockey PUK Version), 1350 A

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(a)

(b)

Tj = - 4 0 ° C

T
j=25 °C

Tj = 1 25 ° C

De vic e: ST780C..L Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

Frequenc y Limited b y PG(AV)

(1)

(2)

(3)

(4)

Device code

ST 78 0 C 06 L 1 - PbF

324

51

6789

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- L = PUK case TO-200AC (B-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8 - Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

9 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95076

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 06-May-08

Document Number: 94415

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

TO-200AC (B-PUK)

Case Style TO-200AC (B-PUK)

Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum

0.7 (0.03) MIN.

27 (1.06) MAX.

0.7 (0.03) MIN.

34 (1.34) DIA. MAX.

2 places

53 (2.09) DIA. MAX.

58.5 (2.3) DIA. MAX.

6.2 (0.24) MIN.

Pin receptacle
AMP. 60598-1

4.7 (0.18)

20° ± 5°

36.5 (1.44)

2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95076 For technical questions concerning discrete products, contact: [e-mail]
Revision: 01-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1