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ST700CLPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 910 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Lead (Pb)-free
TO-200AC (B-PUK)
PRODUCT SUMMARY
I
T(AV)
910 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 15 700
60 Hz 16 400
50 Hz 1232
60 Hz 1125
Typical 150 µs
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
910 A
55 °C
1857 A
25 °C
A
kA2s
1200 to 2000 V
- 40 to 125 °C
RoHS
COMPLIANT
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
ST700C..L
Document Number: 94413 For technical questions, contact: ind-modules@vishay.com
Revision: 06-May-08 1
VOLTAGE
CODE
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
DRM/VRRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
www.vishay.com
MAXIMUM
mA
80
ST700CLPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 910 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√ t for fusing I 2√ t t = 0.1 to 10 ms, no voltage reapplied 12 321 kA 2√ s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1857
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
t = 10 ms
t = 8.3 ms 16 400
t = 10 ms
t = 8.3 ms 13 800
t = 10 ms
t = 8.3 ms 1125
t = 10 ms
t = 8.3 ms 795
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.80 V
TJ = 25 °C, anode supply 12 V resistive load
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 1.13
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.35
T(AV)
), TJ = TJ maximum 1.00
T(AV)
), TJ = TJ maximum 0.40
T(AV)
910 (355) A
55 (85) °C
15 700
13 200
1232
871
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
≤ 1 µs
r
DRM
Gate current 1 A, dIg/dt = 1 A/µs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs,
V
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω , tp = 500 µs
R
1000 A/µs
1.0
µs
150
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
RRM,
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 80 mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94413
2 Revision: 06-May-08
ST700CLPbF Series
Phase Control Thyristors
Vishay High Power Products
(Hockey PUK Version), 910 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
G(AV)
GM
TJ = TJ maximum, tp ≤ 5 ms 10.0
GM
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp ≤ 5 ms 3.0 A
GM
TJ = TJ maximum, tp ≤ 5 ms
GM
TJ = - 40 °C
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GT
GT
GD
GD
= 25 °C 100 200
J
T
= 125 °C 50 -
J
TJ = - 40 °C 2.5 -
= 25 °C 1.8 3.0
T
J
= 125 °C 1.1 -
T
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode-to-cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
anode to
DRM
cathode applied
VALUES
TYP. MAX.
20
5.0
200 -
10 mA
0.25 V
UNITS
W
V
mA T
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.073
DC operation double side cooled 0.031
DC operation single side cooled 0.011
DC operation double side cooled 0.006
Mounting force, ± 10 %
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)
ΔR
CONDUCTION ANGLE
CONDUCTION
thJ-hs
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS UNITS
180° 0.009 0.009 0.006 0.006
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
= TJ maximum K/W
T
J
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
- 40 to 125
- 40 to 150
14 700
(1500)
°C
K/W
N
(kg)
Document Number: 94413 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 06-May-08 3
ST700CLPbF Series
Vishay High Power Products
130
120
110
100
90
80
70
60
50
40
0 100 200 300 400 500 600 700
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0 200 400 600 800 1000
Maximum Allowable Heatsink Temp erature (°C)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
ST7 0 0 C . . L Se r ie s
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
Conduction Angle
30°
60°
90°
ST7 0 0C . . L Se r ie s
(Single Side Cooled)
R (DC ) = 0.073 K/ W
thJ-hs
Conduction Period
30°
60°
90°
120°
120°
180°
Phase Control Thyristors
(Hockey PUK Version), 910 A
130
120
110
100
90
80
70
60
50
180°
DC
40
30
20
Maximum Allowable Heatsink Temperature (°C)
2800
2400
2000
1600
1200
800
400
Ma ximum Av e rag e On -stat e Pow e r Loss (W)
ST7 00 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/W
thJ-hs
Conduction Period
30°
60°
90°
120°
180°
DC
0 400 800 1200 1600 2000
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
ST7 0 0 C . . L Se r ie s
T = 125°C
J
0
0 200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 5 - On-State Power Loss Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0 200 400 600 800 1000 1200
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
ST700C..L Ser ies
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
Conduction Angle
30°
60°
90°
Fig. 3 - Current Ratings Characteristics
120°
180°
3500
3000
2500
2000
1500
1000
Maximum Average On-state Power Loss (W)
DC
180°
120°
90°
60°
30°
RM S Lim it
Conduction Period
500
0
0 400 800 1200 1600 2000
Average On-state Current (A)
ST7 0 0 C . . L Se r i e s
T = 1 2 5° C
J
Fig. 6 - On-State Power Loss Characteristics
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94413
4 Revision: 06-May-08
ST700CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 910 A
14000
13000
12000
11000
10000
Pe a k Half Sine Wave On-state Curren t (A)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
9000
8000
ST7 00 C . . L Se r i e s
7000
6000
11 01 0 0
Numb er Of Equal Amplitude Ha lf Cycle Current Pulses (N)
RRM
Init ial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T = 2 5° C
J
Vishay High Power Products
16000
15000
14000
13000
12000
11000
10000
Peak Half Sine Wave On-state Current (A)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduc tion Ma y Not Be Maintained.
9000
8000
ST7 00 C . . L Se r i e s
7000
6000
0.01 0.1 1
Pu l se Tr a in Du ra t io n (s)
Initial T = 125°C
No Volta g e Rea p p lied
Ra t e d V Re a p p l i e d
RRM
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
J
T = 1 2 5 ° C
J
1000
ST7 0 0 C . . L Se r ie s
Instantaneous On-state Current (A)
100
0 . 511 . 522 . 533 . 54
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
thJ-hs
0.001
Transient Thermal Impedance Z (K/ W)
0.01
ST700C..L Serie s
St e a d y St a t e V a l u e
R = 0.073 K/ W
thJ-hs
(Single Side Cooled)
R = 0.031 K/ W
thJ-hs
(Double Side Cooled)
(DC Operation)
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu lse D u r a t i o n ( s)
Fig. 10 - Thermal Impedance Z
Characteristics
thJ-hs
Document Number: 94413 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 06-May-08 5
ST700CLPbF Series
Vishay High Power Products
100
Rectangular gate pulse
a) Recommended load line for
ra t ed d i/ dt : 20V, 10ohm s; t r<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
1
Instantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1 10 100
ORDERING INFORMATION TABLE
VGD
IGD
Phase Control Thyristors
(Hockey PUK Version), 910 A
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
Tj = -4 0 ° C
Tj = 25 ° C
Tj = 1 25 ° C
Devic e: ST700C ..L Se ries
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
Freq uenc y Limited b y PG(AV)
(1)
(2)
(3)
(4)
Device code
ST 70 0 C 20 L 1 - PbF
3 24
5 1
6789
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4
- C = Ceramic PUK
5
- Voltage code x 100 = V
6
- L = PUK case TO-200AC (B-PUK)
7
- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
(see Voltage Ratings table)
RRM
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
8 - Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
9 - Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95076
www.vishay.com For technical questions, contact: ind-modules@vishay.com
6 Revision: 06-May-08
Document Number: 94413
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay High Power Products
TO-200AC (B-PUK)
Case Style TO-200AC (B-PUK)
Creepage distance: 36.33 (1.430) minimu m
Strike distance: 17.43 (0.686) minimu m
0.7 (0.03) MIN .
27 (1.06) MAX.
0.7 (0.03) MIN .
34 (1.34) DIA. MAX.
2 places
53 (2.09) DIA. MAX.
58.5 (2.3) DIA. MAX.
6.2 (0.24) MIN .
Pin receptacle
AMP. 60598-1
4.7 (0.18)
20° ± 5°
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Qu ote b etw een u pper and low er pole pieces has to b e considered after
application of mou nting force (see thermal and mechanical specification)
Document Number: 95076 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 01-Aug-07 For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1