C&H Technology ST650C-L User Manual
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Suite 108
Minnetonka, MN 55345
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Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 790 A
FEATURES
• Center amplifying gate
ST650C..L Series
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Lead (Pb)-free
TO-200AC (B-PUK)
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
T(AV)
790 A
• DC motor control
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 10 100
60 Hz 10 700
50 Hz 510
60 Hz 475
Typical 200 µs
790 A
55 °C
1557 A
25 °C
A
kA2s
2000 to 2400 V
- 40 to 125 °C
RoHS
COMPLIANT
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
ST650C..L
Document Number: 93738 For technical questions, contact: ind-modules@vishay.com
Revision: 15-May-08 1
VOLTAGE
CODE
20 2000 2100
22 2200 2300
24 2400 2500
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
= TJ MAXIMUM
AT T
J
www.vishay.com
MAXIMUM
mA
80
ST650C..L Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version),
790 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 5100 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state
slope resistance
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
T(AV)
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1857
I
TSM
T(TO)1
T(TO)2
t1
r
t2
TM
H
L
t = 10 ms
t = 8.3 ms 10 700
t = 10 ms
t = 8.3 ms 9150
t = 10 ms
t = 8.3 ms 475
t = 10 ms
t = 8.3 ms 347
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.07 V
TJ = 25 °C, anode supply 12 V resistive load
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 1.13
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.35
T(AV)
), TJ = TJ maximum 1.04
T(AV)
), TJ = TJ maximum 0.61
T(AV)
790 (324) A
55 (85) °C
10 100
8600
510
370
600
1000
kA
mΩ
mA
A
2
s
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Maximum turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
Gate current 1 A, dIg/dt = 1 A/µs
V
= 0.67 % V
d
DRM
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs
= 50, dV/dt = 20 V/µs, Gate 0 V 100 Ω, tp = 500 µs
V
R
≤ 1 µs
r
, TJ = 25 °C
DRM
1000 A/µs
1.0
µs
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt T
,
I
Maximum peak reverse and off-state leakage current
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
applied 80 mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 15-May-08
500 V/µs
Document Number: 93738
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