C&H Technology ST650C-L User Manual

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Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 790 A

FEATURES

• Center amplifying gate

ST650C..L Series

• Metal case with ceramic insulator

• International standard case TO-200AC (B-PUK)

• Lead (Pb)-free

TO-200AC (B-PUK)

TYPICAL APPLICATIONS

PRODUCT SUMMARY

I

T(AV)

790 A

• DC motor control

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 10 100

60 Hz 10 700

50 Hz 510

60 Hz 475

Typical 200 µs

790 A

55 °C

1557 A

25 °C

A

kA2s

2000 to 2400 V

- 40 to 125 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST650C..L

Document Number: 93738 For technical questions, contact: [e-mail]
Revision: 15-May-08 1

VOLTAGE

CODE

20 2000 2100

22 2200 2300

24 2400 2500

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

= TJ MAXIMUM

AT T

J

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MAXIMUM

mA

80

ST650C..L Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version),

790 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 5100 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state
slope resistance

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
Double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1857

I

TSM

T(TO)1

T(TO)2

t1

r

t2

TM

H

L

t = 10 ms

t = 8.3 ms 10 700

t = 10 ms

t = 8.3 ms 9150

t = 10 ms

t = 8.3 ms 475

t = 10 ms

t = 8.3 ms 347

(16.7 % x π x I

(I > π x I

(16.7 % x π x I

(I > π x I

Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.07 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.13

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.35

T(AV)

), TJ = TJ maximum 1.04

T(AV)

), TJ = TJ maximum 0.61

T(AV)

790 (324) A

55 (85) °C

10 100

8600

510

370

600

1000

kA

mΩ

mA

A

2

s

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Maximum turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

DRM

ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs

= 50, dV/dt = 20 V/µs, Gate 0 V 100 Ω, tp = 500 µs

V

R

≤ 1 µs

r

, TJ = 25 °C

DRM

1000 A/µs

1.0
µs

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt T

,

I

Maximum peak reverse and off-state leakage current

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

applied 80 mA

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 15-May-08

500 V/µs

Document Number: 93738

ST650C..L Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 790 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.8 3.0

T

J

= 125 °C 1.1 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

DRM

anode to

cathode applied

VALUES

TYP. MAX.

3.0 A

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.073

DC operation double side cooled 0.031

DC operation single side cooled 0.011

DC operation double side cooled 0.006

Mounting force, ± 10 %

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

ΔR

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.009 0.009 0.006 0.006

120° 0.011 0.011 0.011 0.011

90° 0.014 0.014 0.015 0.015

T

60° 0.020 0.020 0.021 0.021

30° 0.036 0.036 0.036 0.036

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

Document Number: 93738 For technical questions, contact: [e-mail]
Revision: 15-May-08 3

- 40 to 125

- 40 to 150

K/W

14 700
(1500)

= TJ maximum K/W

J

(kg)

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°C

N

ST650C..L Series

Vishay High Power Products

130

120

110

100

90

80

70

60

0 50 100 150 200 250 300 350 400

Maxim um A llowable Heatsink Temperature (°C)

Av erag e O n-s ta t e C urren t (A )

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500 600 700 800

Maximum Allowable Heatsink Temperature (°C)

Av era g e O n - sta te C u rre nt (A )

Fig. 2 - Current Ratings Characteristics

ST 6 50C ..L Se ries
(Single Side C oo le d )
R (D C ) = 0.073 K/W

th J-hs

Conduction Angle

30°

60°

90°

120°

ST 6 50C ..L Se ries
(Double Side Cooled)
R (D C ) = 0.031 K /W

thJ-h s

Conduction Angle

90°

60°

30°

180°

120°

Phase Control Thyristors

(Hockey PUK Version),

790 A

180°

130

120

110

100

90

80

70

60

50

40

30

20

0 200 400 600 800 1000 1200 1400

Maxim um Allowable Heatsink Tem perature (°C)

ST650C..L Series
(D ouble S ide C ooled)
R (DC ) = 0.031 K /W

th J-hs

Cond uc tion Period

90°

60°

30°

Averag e O n-state C urrent (A)

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

2000

1750

1500

1250

1000

750

500

250

M axim um A vera g e O n -sta te P o w er Loss (W )

180°
120°

90°
60°
30°

RMS Lim it

Conduction Angle

ST650C..L Series
T = 12 5°C

J

0

0 100 200 300 400 500 600 700 800

Average On-state Current (A)

Fig. 5 - On-State Power Loss Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500 600 700 800

Maximum Allowable Heatsink Temperature (°C)

Av era g e O n - sta te C u rre nt (A )

ST 6 50C ..L Se ries
(Double Side Cooled)
R (D C ) = 0.031 K /W

thJ-h s

Conduction Angle

90°

60°

30°

Fig. 3 - Current Ratings Characteristics

180°

120°

2400

DC

2200

180°

2000

120°

90°

1800

60°

1600

30°

1400

RMS Lim it

1200

1000

800

600

400

200

0

M axim um Ave rage On-state P ow er Loss (W)

0 200 400 600 800 1000 1200 1400

A ve ra g e O n -st a te C urre nt (A )

Conduction Period

ST650C ..L Series
T = 12 5°C

J

Fig. 6 - On-State Power Loss Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93738

4 Revision: 15-May-08

ST650C..L Series

Phase Control Thyristors

(Hockey PUK Version), 790 A

10000

Peak Half Sine Wave On-state Current (A)

Fig. 7 - Maximum Non-Repetitive Surge Current

A t Any Rate d Lo a d C ond ition A n d W ith

R a t e d V Ap pl ie d F o llo w ing Su r g e .

9000

8000

7000

6000

5000

ST650 C..L S e r ies

4000

Num ber Of Equ al Amp litude H alf Cycle Curren t Pulse s (N)

RRM

Initia l T = 12 5°C

J

@ 60 H z 0.0083 s
@ 50 H z 0.0100 s

Single and Double Side Cooled

10000

Vishay High Power Products

12000

M a x im u m N on R e pet itive S urg e C urre nt

11000

10000

9000

8000

7000

6000

5000

Pe ak Ha lf Sine W ave O n-state C urre nt (A )

001011

4000

Fig. 8 - Maximum Non-Repetitive Surge Current

Ve rsu s P u lse T ra in D ura tion . C o n t rol

O f C ondu c tion M a y N ot Be M a inta ined.

ST650C..L Series

Pulse Train Duration (s)

In i t ia l T = 1 2 5 °C

N o Vo l t a g e R e a p p l ie d
Ra te d V Rea p p lied

J

RRM

Single and Double Side Cooled

11.010.0

thJ-h s

0.1

Stead y St a te V a lue

R = 0.073 K/W

thJ-h s

(Sin gle Side Coo led)

R = 0.031 K/W

thJ-h s

(Do uble Side Coo led)

(DC O p era tion)

0.01

T = 25°C

J

1000

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2 .5 3

Insta n tan eo us O n-stat e V oltage (V)

T = 125°C

J

ST650C..L Series

Fig. 9 - On-State Voltage Drop Characteristics

ST6 50C ..L Series

0.001

Tra nsien t Th erm al Impe d a nc e Z (K/ W )

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

0111.010.0100.0

Document Number: 93738 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 15-May-08 5

ST650C..L Series

Vishay High Power Products

100

Rectangular gate pulse

a) Recommended load line for
rated di/dt : 20V, 10ohm s; tr<=1 µs

b ) Re c o m m e n d e d lo a d lin e fo r

<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Inst a nt ane o us G a te V o lta g e (V )

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

Device code

ST 65 0 C 24 L 1 -

VG D

Phase Control Thyristors

(Hockey PUK Version),

790 A

(a)

(b)

Tj=-40 °C

Tj = 25 ° C

Tj=125 °C

IG D

ST6 50C ..L Se rie s

Insta n tan e o us G ate C urren t (A)

Fig. 11 - Gate Characteristics

Frequency Limited by PG(AV)

(1) PG M = 10W , tp = 4m s
(2) PG M = 20W , tp = 2m s
(3) PG M = 40W , tp = 1m s
(4) PG M = 60W , tp = 0.66m s

(2) (3)

(1)

(4)

51324678

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- L = PUK case TO-200AC (B-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8 - Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95076

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 15-May-08

Document Number: 93738