C&H Technology ST380CPbF User Manual

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(Hockey PUK Version), 960 A

TO-200AB (E-PUK)

Vishay High Power Products

Phase Control Thyristors

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (E-PUK)

• Low profile hockey PUK to increase
current-carrying capability

• Lead (Pb)-free

• Designed and qualified for industrial level

ST380CPbF Series

RoHS

COMPLIANT

PRODUCT SUMMARY

I

T(AV)

960 A

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 15 000

60 Hz 15 700

50 Hz 1130

60 Hz 1030

Typical 100 µs

960 A

55 °C

1900 A

25 °C

400/600 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

A

kA2s

VOLTAGE RATINGS

V

TYPE NUMBER

ST380C..C

Document Number: 94410 For technical questions, contact: [e-mail]
Revision: 06-May-08 1

VOLTAGE

CODE

04 400 500

06 600 700

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

NON-REPETITIVE PEAK VOLTAGE

V

RSM

, MAXIMUM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

www.vishay.com

MAXIMUM

mA

50

ST380CPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 960 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 300 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1900

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 15 700

t = 10 ms

t = 8.3 ms 13 200

t = 10 ms

t = 8.3 ms 1030

t = 10 ms

t = 8.3 ms 725

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 3000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.60 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.88

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.24

T(AV)

), TJ = TJ maximum 0.85

T(AV)

), TJ = TJ maximum 0.25

T(AV)

960 (440) A

55 (75) °C

15 000

12 600

1130

800

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

RRM,

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 50 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94410

2 Revision: 06-May-08

ST380CPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 960 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

GM

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.8 3.0

T

J

= 125 °C 1.1 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.09

DC operation double side cooled 0.04

DC operation single side cooled 0.02

DC operation double side cooled 0.01

Mounting force, ± 10 %

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)

ΔR

CONDUCTION ANGLE

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.010 0.011 0.007 0.007

120° 0.012 0.012 0.012 0.013

90° 0.015 0.015 0.016 0.017

= TJ maximum K/W

T

J

60° 0.022 0.022 0.023 0.023

30° 0.036 0.036 0.036 0.037

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 125

- 40 to 150

9800

(1000)

°C

K/W

N

(kg)

Document Number: 94410 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 06-May-08 3

ST380CPbF Series

Vishay High Power Products

130

120

110

100

90

80

70

60

50

40

0 100 200 300 400 500 600 700

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 200 400 600 800 1000 1200

Maximum Allowa ble Heatsink Temp erature (°C)

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

ST3 80 C . . C Se ri e s
(Single Side Cooled)
R (DC) = 0.09 K/ W

thJ-hs

30°

60°

ST380C..C Se rie s
(Single Side Cooled)
R (DC ) = 0.09 K/ W

thJ-hs

30°

60°

90°

120°

Cond uc tion Angle

90°

120°

Conduction Period

180°

DC

Phase Control Thyristors

(Hockey PUK Version), 960 A

130

120

110

100

90

80

70

60

50

180°

40

30

20

Maximum Allowable Heatsink Temp erature (°C)

2000

1800

1600

1400

1200

1000

800

600

400

200

Maximum Average On-sta te Power Loss (W)

Fig. 5 - On-State Power Loss Characteristics

ST3 80 C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.04 K/ W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

DC

0 400 800 1200 1600 2000

Average On-stat e Current (A)

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

0

0 200 400 600 800 1000 1200 1400

Average On-state Current (A)

RM S Li m i t

Conduction Angle

ST3 80 C . . C Se ri e s
T = 1 25 ° C

J

130

120

110

100

90

80

70

60

50

40

30

20

0 200 400 600 800 1000 1200 1400

Maximum Allowable He atsink Temperature (°C)

Average On-state Current (A)

ST38 0 C . . C Se ri e s
(Double Side Cooled)
R (DC) = 0.04 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Fig. 3 - Current Ratings Characteristics

180°

2800

2400

2000

1600

1200

800

400

Maximum Averag e On-stat e Power Loss (W)

DC
180°
120°

90°

60°

30°

RM S Li m i t

Cond uction Period

ST380C..C Se ries
T = 12 5 °C

J

0

0 400 800 1200 1600 2000

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94410

4 Revision: 06-May-08

ST380CPbF Series

Phase Control Thyristors

(Hockey PUK Version), 960 A

14000

At Any Rated Load Condition And With

Rat ed V Applied Follow ing Surge.

13000

12000

11000

10000

9000

8000

ST380C..C Se rie s

7000

Pe a k Half Sine Wa ve On-state Current (A)

6000

110100

Number Of Equa l Amplitude Ha lf Cycle C urrent Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

RRM

Initia l T = 125°C

J

@ 6 0 H z 0. 0 0 8 3 s
@ 50 Hz 0.0100 s

10000

T = 2 5° C

J

Vishay High Power Products

15000

Maximum Non Repetitive Surge Current

14000

13000

12000

11000

10000

9000

8000

7000

Pe a k Ha lf Si ne Wa ve O n -st a t e C ur re n t ( A)

6000

Fig. 8 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Durat ion. Control

Of C onduc tion Ma y Not Be Ma int ained .

ST3 8 0 C . .C Se r i e s

0.01 0.1 1

Pulse Tr a in Dura t io n ( s)

Initial T = 125°C

No Vo lt ag e Re ap p lied

Ra t e d V Re a p p l i ed

J

RRM

Single and Double Side Cooled

T = 125°C

J

1000

ST3 80 C . . C Se r i e s

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 3 3.5

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

0.1

thJ-hs

0.01

ST3 8 0 C . .C Se ri e s

St e a d y St a t e V a l u e

R = 0.09 K/ W

thJ-hs

(Single Side Cooled)

R = 0.04 K/ W

thJ-hs

(Double Side Cooled)

(DC Operation)

0.001

Transient The rma l Imp eda nce Z (K/ W)

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Document Number: 94410 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 06-May-08 5

ST380CPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Rec ommended load line for

<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

In st a nt a n eo us G a t e Vo lt a g e ( V)

0.1

0.001 0.0 1 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

Phase Control Thyristors

(Hockey PUK Version), 960 A

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, t p = 0.66ms

(a)

(b)

Tj =- 4 0 ° C

Tj=25 °C

Tj = 1 25 ° C

IG D

De vic e: ST380C ..C Se rie s

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

Frequenc y Limited by PG(AV)

(1)

(2)

(3)

(4)

Device code

ST 38 0 C 06 C 1 - PbF

324

51

6789

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- C = PUK case TO-200AB (E-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8 - Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

9 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95075

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 06-May-08

Document Number: 94410

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

TO-200AB (E-PUK)

Case Style TO-200AB (E-PUK)

Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum

25.3 (0.99)
DIA. MAX.

0.3 (0.01) MIN.

14.1/15.1

(0.56/0.59)

25.3 (0.99)
DIA. MAX.

40.5 (1.59) DIA. MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

0.3 (0.01) MIN.

Gate terminal for

1.47 (0.06) DIA.
pin receptacle

6.5 (0.26)

4.75 (0.19)

25° ± 5°

42 (1.65) MAX.

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95075 For technical questions concerning discrete products, contact: [e-mail]
Revision: 01-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1