C&H Technology ST333SP User Manual

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Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 330 A

FEATURES

• Center amplifying gate

ST333SP Series

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Lead (Pb)-free

TO-209AE (TO-118)

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

•Inverters

PRODUCT SUMMARY

I

T(AV)

330 A

• Choppers

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 11 000

60 Hz 11 520

50 Hz 605

60 Hz 550

330 A

75 °C

518

A

kA2s

400 to 800 V

15 µs

- 40 to 125 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST333S

Document Number: 94377 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 1

VOLTAGE

CODE

04 400 500

08 800 900

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

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MAXIMUM

mA

50

ST333SP Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 330 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 840 600 1280 1040 5430 4350

400 Hz 650 450 1280 910 2150 1560

1000 Hz 430 230 1090 730 1080 720

2500 Hz 140 60 490 250 400 190

Recovery voltage V

R

Voltage before turn-on V

D

50 50 50

V

DRM

V

Rise of on-state current dI/dt 50 - - A/µs

Case temperature 50 75 50 75 50 75 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state
current at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave

DC at 63 °C case temperature 518

t = 10 ms

t = 8.3 ms 11 520

t = 10 ms

t = 8.3 ms 9700

t = 10 ms

t = 8.3 ms 550

t = 10 ms

t = 8.3 ms 390

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 1810 A, TJ = TJ maximum,
t

= 10 ms sine wave pulse

p

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.92

< I < π x I

T(AV)

), TJ = TJ maximum 0.58

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 0.91

T(AV)

), TJ = TJ maximum 0.58

T(AV)

100 µs

V

= TJ maximum

J

DRM

I

TM

330 A

75 °C

11 000

9250

605

430

1.96

A

V

A

kA2s

V

mΩ

mA

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Document Number: 94377

2 Revision: 30-Apr-08

ST333SP Series

Inverter Grade Thyristors

Vishay High Power Products

(Stud Version), 330 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Maximum turn-off time t

dI/dt

d

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage current

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

= TJ maximum, V

T

J

= Rated V

DRM

DRM

ITM = 2 x dI/dt

TJ = 25 °C, VDM = Rated V

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,
I

= 550 A, commutating dI/dt = 40 A/µs

TM

= 50 V, tp = 500 µs, dV/dt = 200 V/µs

V

R

= TJ maximum, linear to 80 % V

T

J

higher value available on request

I

,

RRM

I

DRM

G(AV)

GM

GT

GD

GM

GM

GM

GT

GD

TJ = TJ maximum, rated V

DRM/VRRM

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

1000 A/µs

1.0

15

,

DRM

500 V/µs

applied 50 mA

60

10

10 A

20

200 mA

applied

20 mA

0.25 V

µs

W

5

V

3V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.10

Mounting surface, smooth, flat and greased 0.03

Mounting torque, ± 10 % Non-lubricated threads

Approximate weight 535 g

Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)

Document Number: 94377 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 3

- 40 to 125

- 40 to 150

48.5

(425)

°C

K/W

N · m

(lbf · in)

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ST333SP Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 330 A

ΔR

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.011 0.008

120° 0.013 0.014

T

90° 0.017 0.018

= TJ maximum K/W

J

60° 0.025 0.026

30° 0.041 0.042

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

ST333S Se ries
R (DC) = 0.10 K/ W

thJC

Cond uction Ang le

130

120

110

100

ST3 33 S Se r i e s
R (DC) = 0.10 K/ W

thJC

Cond uction Period

100

90

30°

60°

90°

80

70

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300 350

Average On-state Current (A)

120°

180°

90

80

70

60

Maximum Allowable Case Temperature (°C)

30°

60°

90°

120°

180°

0 100 200 300 400 500 600

Average On-state Current (A)

DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

500

450

400

350

300

250

200

150

100

50

Maximum Average On-state Power Loss (W)

180°
120°

90°
60°
30°

RM S Li m it

Cond uction Angle

ST3 33 S Se r i e s
T = 12 5 °C

J

0

0 50 100 150 200 250 300 350

Average On-state Current (A)

0

0

.

0

8

K

/

W

0

.

1

2

K

/

W

0

.

1

6

K

/

W

0

.

2

K

/

W

0

.

3

K

/

W

0

.

5

K

/

W

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

R

0

.

.

0

t

0

h

6

3

S

K

A

K

/

/

=

W

W

0

.

0

1K

/

W

­D

e

l

t
a

R

Fig. 3 - On-State Power Loss Characteristics

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Document Number: 94377

4 Revision: 30-Apr-08

ST333SP Series

700

600

500

400

RM S Li m i t

300

200

100

0

Ma ximum Ave rag e On-state Power Loss (W)

0 100 200 300 400 500 600

10000

At Any Rated Loa d Co ndition And With

Rated V Applied Following Surge.

9000

RRM

8000

Inverter Grade Thyristors

(Stud Version), 330 A

DC
180°
120°

90°

60°

30°

Conduc tion Period

ST3 33 S Se r i e s
T = 12 5 °C

J

Average On-state Current (A)

Fig. 4 - On-State Power Loss Characteristics

Init ial T = 125°C

J

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

Vishay High Power Products

R

0

t

.

0

h

3

S

A

K

=

/

W

0

0

.

0

0

.

1

0

.

2

0

.

3

0

.

5

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

.

0

6

2

K

K

K

1

K

/

K

/

/

/

K

/

W

/

W

W

W

W

W

­D

e

l

t

a

R

10000

T = 25 ° C

J

T = 12 5 °C

J

7000

6000

5000

ST3 33 S Se ri e s

Peak Half Sine Wave On-sta te Current (A)

4000

110100

Numbe r Of Equa l Amplitude Ha lf Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

11000

Maximum Non Repetitive Surge Current

10000

9000

8000

Versus Pulse Train Duration. Control

Of Conduct ion May Not Be Mainta ined.

Init ial T = 125°C

No Volt ag e Re ap p lie d
Rated V Reapplied

J

RRM

7000

6000

5000

ST3 33 S Se r i e s

Peak Half Sine Wave On-st at e Current (A)

4000

0.01 0.1 1

Pulse Tr a in Du r a t io n (s)

Fig. 6 - Maximum Non-Repetitve Surge Current

1000

ST3 3 3 S Se r i e s

Instantaneous On-state Current (A)

100

01234567

In st a nt a n e o u s On -st a t e V olt a g e ( V )

Fig. 7 - On-State Voltage Drop Characteristics

1

Steady State Value

R = 0.10 K/ W

thJC

0.001

Transient Therma l Imp ed anc e Z (K/W)

Fig. 8 - Thermal Impedance Z

thJC

(DC Operation)

0.1

0.01

ST333S Se rie s

0.001 0.01 0.1 1 10

Sq u a r e W a v e Pu l se D u r a t i o n ( s)

Characteristics

thJC

Document Number: 94377 For technical questions, contact: [e-mail]

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Revision: 30-Apr-08 5

ST333SP Series

Vishay High Power Products

320

300

280

260

240

220

200

180

160

140

120

100

80

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Ra te Of Fall Of On-state Curren t - di/ dt (A / µs)

Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics

1E4

1E3

2500

3000

1E2

Pea k On-sta te Curre nt ( A)

5000

1E1

1E1 1E2 1E3 1E4

I = 500 A

TM

300 A
200 A
100 A

50 A

ST333S Se rie s
T = 12 5 ° C

500

1000

1500

2000

Pu lse Ba sew id t h ( µs)

J

400

tp

Inverter Grade Thyristors

(Stud Version), 330 A

50 Hz

100

200

Snu bb er c ircu it
R = 1 0 o hm s

s

C = 0.47 µF

s

V = 80% V

D

DRM

ST3 33 S Se r i e s
Si n u so i d a l p u l se
T = 50°C

C

1E4

Fig. 11 - Frequency Characteristics

180

160

140

I = 500 A

TM

300 A
200 A
100 A

50 A

120

100

80

60

ST333S Se rie s
T = 125 °C

J

40

20

Ma ximum Rev e rse Rec ove ry Curren t - Irr (A)

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of On-st ate Current - di/d t (A/ µs)

50 Hz

100

200

400

500

1000

1500

2000

2500

3000

1E1

1E1 1E2 1E3 1E4

tp

Sn u b b e r c ir c u i t
R = 10 o hm s

s

C = 0.47 µF

s

V = 80% V

ST3 33 S Se r i e s
Sinusoid al p ulse
T = 75°C

C

DRM

D

Pu lse Ba se w i dt h ( µs)

1E4

50 Hz

1E3

1E2

2500

3000

1000

1500

2000

Peak O n-sta te C urrent ( A)

1E1

1E11E21E31E4

500

400

Snu b be r c irc uit
R = 10 o h ms

s

C = 0.47 µF

s

V = 80% V

ST333S Series
Trapezoidal pulse
T = 50°C

C

di/dt = 50A/µs

DRM

D

1E4

100

200

Pu lse Ba se w id t h ( µs)

200

400

500

1000

1500

2000

2500

3000

1E1

1E1 1E2 1E3 1E4

Pu lse Ba sew id t h (µ s)

50 Hz

100

Sn u b b e r c i r c u i t
R = 1 0 o h m s

s

C = 0.47 µF

s

V = 80% V

ST3 33 S Se r i e s
Trapezoidal pulse
T = 75°C

C

di/dt = 50A/µs

DRM

D

Fig. 12 - Frequency Characteristics

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Document Number: 94377

6 Revision: 30-Apr-08

ST333SP Series

Inverter Grade Thyristors

1E4

100

200

1E3

1000

1500

2000

1E2

3000

2500

Peak O n-sta te C urren t ( A)

1E1

1E1 1E2 1E3 1E4

Pul se Base w id t h ( µs)

1E5

1E4

1E3

1E2

Peak On-state Current (A)

1E1

1E1 1E2 1E3 1E4

0.3

0.2

tp

0.5

ST33 3 S Se r ie s
Sinusoidal pulse

Pulse Ba sew id t h (µs)

500

3

2

1

400

Sn u b b e r c i rc u i t
R = 10 o hm s
C = 0.47 µF
V = 80% V

ST3 33 S Se r i e s
Tr a p e z o id a l p u l se
T = 50 ° C

C

tp

di/dt = 100A/µs

20 jo ule s p er p ulse

10

5

s
s
D

(Stud Version), 330 A

50 Hz

DRM

1E4

Fig. 13 - Frequency Characteristics

1E4

Vishay High Power Products

50 Hz

100

200

400

500

1000

1500

2000

2500

3000

1E1

1E1 1E2 1E3 1E4

Pu lse Ba sew id t h (µ s)

ST33 3 S Se r i es
Rectangular pulse

tp

di/dt = 50A/µs

2

1

0.5

0.4

0.3

0.2

1E1

1E1 1 E2 1E3 1E4

Pulse Ba sew id th (µ s)

ST3 3 3 S Se r i e s
Trapezoidal pulse
T = 7 5 ° C

C

tp

di/dt = 100A/µs

20 jou les pe r p ulse

10

5

3

Sn u b b e r c i r c u i t
R = 10 o hm s

s

C = 0.47 µF

s

V = 80% V

D

DRM

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

(b)

Tj =- 40 ° C

Tj = 2 5 ° C

Tj = 12 5 ° C

(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, t p = 5ms
(4) PGM = 60W, t p = 3.3ms

(a)

1

(2)

(3)

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

VGD

IGD

De vic e: ST333S Serie s

Fr e q ue n c y Lim i t e d b y PG ( A V)

(1)

(4)

Insta nta neous Gat e Current (A)

Fig. 15 - Gate Characteristics

Document Number: 94377 For technical questions, contact: [e-mail]

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Revision: 30-Apr-08 7

ST333SP Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 33 3 S 08 P F L 0 P

324

1 - Thyristor

2 - Essential part number

3 - 3 = Fast turn-off

4 - S = Compression bonding stud

5 - Voltage code x 100 = V

(see Voltage Ratings table)

6 - P = Stud base 3/4" 16UNF-2A

7 - Reapplied dV/dt code (for t

8 -t

9 - 0 = Eyelet terminals

10

code (L = 15 µs)

q

(gate and auxiliary cathode leads)

1 = Fast-on terminals

(gate and auxiliary cathode leads)

- Lead (Pb)-free

Inverter Grade Thyristors

(Stud Version), 330 A

51

678910

RRM

test condition) F = 200 V/µs

q

Note: For metric device M24 x 1.5 contact factory

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95080

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8 Revision: 30-Apr-08

Document Number: 94377