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Page 2

Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
ST333SP Series
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Lead (Pb)-free
TO-209AE (TO-118)
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
•Inverters
PRODUCT SUMMARY
I
T(AV)
330 A
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 11 000
60 Hz 11 520
50 Hz 605
60 Hz 550
330 A
75 °C
518
A
kA2s
400 to 800 V
15 µs
- 40 to 125 °C
RoHS
COMPLIANT
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
ST333S
Document Number: 94377 For technical questions, contact: ind-modules@vishay.com
Revision: 30-Apr-08 1
VOLTAGE
CODE
04 400 500
08 800 900
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
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MAXIMUM
mA
50
Page 3

ST333SP Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 330 A
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 840 600 1280 1040 5430 4350
400 Hz 650 450 1280 910 2150 1560
1000 Hz 430 230 1090 730 1080 720
2500 Hz 140 60 490 250 400 190
Recovery voltage V
R
Voltage before turn-on V
D
50 50 50
V
DRM
V
Rise of on-state current dI/dt 50 - - A/µs
Case temperature 50 75 50 75 50 75 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state
current at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA2√s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
T(AV)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
180° conduction, half sine wave
DC at 63 °C case temperature 518
t = 10 ms
t = 8.3 ms 11 520
t = 10 ms
t = 8.3 ms 9700
t = 10 ms
t = 8.3 ms 550
t = 10 ms
t = 8.3 ms 390
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
ITM = 1810 A, TJ = TJ maximum,
t
= 10 ms sine wave pulse
p
(16.7 % x π x I
(I > π x I
T(AV)
(16.7 % x π x I
(I > π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.92
< I < π x I
T(AV)
), TJ = TJ maximum 0.58
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
DRM
I
TM
RRM
Sinusoidal half wave,
initial T
RRM
), TJ = TJ maximum 0.91
T(AV)
), TJ = TJ maximum 0.58
T(AV)
100 µs
V
= TJ maximum
J
DRM
I
TM
330 A
75 °C
11 000
9250
605
430
1.96
A
V
A
kA2s
V
mΩ
mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94377
2 Revision: 30-Apr-08
Page 4

ST333SP Series
Inverter Grade Thyristors
Vishay High Power Products
(Stud Version), 330 A
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Maximum turn-off time t
dI/dt
d
q
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate currrent required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
= TJ maximum, V
T
J
= Rated V
DRM
DRM
ITM = 2 x dI/dt
TJ = 25 °C, VDM = Rated V
, ITM = 50 A DC, tp = 1 µs
DRM
Resistive load, gate pulse: 10 V, 5 Ω source
TJ = TJ maximum,
I
= 550 A, commutating dI/dt = 40 A/µs
TM
= 50 V, tp = 500 µs, dV/dt = 200 V/µs
V
R
= TJ maximum, linear to 80 % V
T
J
higher value available on request
I
,
RRM
I
DRM
G(AV)
GM
GT
GD
GM
GM
GM
GT
GD
TJ = TJ maximum, rated V
DRM/VRRM
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
TJ = TJ maximum, rated V
DRM
1000 A/µs
1.0
15
,
DRM
500 V/µs
applied 50 mA
60
10
10 A
20
200 mA
applied
20 mA
0.25 V
µs
W
5
V
3V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
J
Stg
thJC
thCS
DC operation 0.10
Mounting surface, smooth, flat and greased 0.03
Mounting torque, ± 10 % Non-lubricated threads
Approximate weight 535 g
Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)
Document Number: 94377 For technical questions, contact: ind-modules@vishay.com
Revision: 30-Apr-08 3
- 40 to 125
- 40 to 150
48.5
(425)
°C
K/W
N · m
(lbf · in)
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Page 5

ST333SP Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 330 A
ΔR
Note
• The table above shows the increment of thermal resistance R
CONDUCTION
thJ-hs
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.011 0.008
120° 0.013 0.014
T
90° 0.017 0.018
= TJ maximum K/W
J
60° 0.025 0.026
30° 0.041 0.042
when devices operate at different conduction angles than DC
thJ-hs
130
120
110
ST333S Se ries
R (DC) = 0.10 K/ W
thJC
Cond uction Ang le
130
120
110
100
ST3 33 S Se r i e s
R (DC) = 0.10 K/ W
thJC
Cond uction Period
100
90
30°
60°
90°
80
70
Maximum Allowable Case Temperature (°C)
0 50 100 150 200 250 300 350
Average On-state Current (A)
120°
180°
90
80
70
60
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
0 100 200 300 400 500 600
Average On-state Current (A)
DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
500
450
400
350
300
250
200
150
100
50
Maximum Average On-state Power Loss (W)
180°
120°
90°
60°
30°
RM S Li m it
Cond uction Angle
ST3 33 S Se r i e s
T = 12 5 °C
J
0
0 50 100 150 200 250 300 350
Average On-state Current (A)
0
0
.
0
8
K
/
W
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
5
K
/
W
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
0
.
.
0
t
0
h
6
3
S
K
A
K
/
/
=
W
W
0
.
0
1K
/
W
D
e
l
t
a
R
Fig. 3 - On-State Power Loss Characteristics
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94377
4 Revision: 30-Apr-08
Page 6

ST333SP Series
700
600
500
400
RM S Li m i t
300
200
100
0
Ma ximum Ave rag e On-state Power Loss (W)
0 100 200 300 400 500 600
10000
At Any Rated Loa d Co ndition And With
Rated V Applied Following Surge.
9000
RRM
8000
Inverter Grade Thyristors
(Stud Version), 330 A
DC
180°
120°
90°
60°
30°
Conduc tion Period
ST3 33 S Se r i e s
T = 12 5 °C
J
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Init ial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Vishay High Power Products
R
0
t
.
0
h
3
S
A
K
=
/
W
0
0
.
0
0
.
1
0
.
2
0
.
3
0
.
5
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
.
0
6
2
K
K
K
1
K
/
K
/
/
/
K
/
W
/
W
W
W
W
W
D
e
l
t
a
R
10000
T = 25 ° C
J
T = 12 5 °C
J
7000
6000
5000
ST3 33 S Se ri e s
Peak Half Sine Wave On-sta te Current (A)
4000
110100
Numbe r Of Equa l Amplitude Ha lf Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
11000
Maximum Non Repetitive Surge Current
10000
9000
8000
Versus Pulse Train Duration. Control
Of Conduct ion May Not Be Mainta ined.
Init ial T = 125°C
No Volt ag e Re ap p lie d
Rated V Reapplied
J
RRM
7000
6000
5000
ST3 33 S Se r i e s
Peak Half Sine Wave On-st at e Current (A)
4000
0.01 0.1 1
Pulse Tr a in Du r a t io n (s)
Fig. 6 - Maximum Non-Repetitve Surge Current
1000
ST3 3 3 S Se r i e s
Instantaneous On-state Current (A)
100
01234567
In st a nt a n e o u s On -st a t e V olt a g e ( V )
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
R = 0.10 K/ W
thJC
0.001
Transient Therma l Imp ed anc e Z (K/W)
Fig. 8 - Thermal Impedance Z
thJC
(DC Operation)
0.1
0.01
ST333S Se rie s
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
Characteristics
thJC
Document Number: 94377 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 30-Apr-08 5
Page 7

ST333SP Series
Vishay High Power Products
320
300
280
260
240
220
200
180
160
140
120
100
80
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC)
Ra te Of Fall Of On-state Curren t - di/ dt (A / µs)
Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics
1E4
1E3
2500
3000
1E2
Pea k On-sta te Curre nt ( A)
5000
1E1
1E1 1E2 1E3 1E4
I = 500 A
TM
300 A
200 A
100 A
50 A
ST333S Se rie s
T = 12 5 ° C
500
1000
1500
2000
Pu lse Ba sew id t h ( µs)
J
400
tp
Inverter Grade Thyristors
(Stud Version), 330 A
50 Hz
100
200
Snu bb er c ircu it
R = 1 0 o hm s
s
C = 0.47 µF
s
V = 80% V
D
DRM
ST3 33 S Se r i e s
Si n u so i d a l p u l se
T = 50°C
C
1E4
Fig. 11 - Frequency Characteristics
180
160
140
I = 500 A
TM
300 A
200 A
100 A
50 A
120
100
80
60
ST333S Se rie s
T = 125 °C
J
40
20
Ma ximum Rev e rse Rec ove ry Curren t - Irr (A)
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-st ate Current - di/d t (A/ µs)
50 Hz
100
200
400
500
1000
1500
2000
2500
3000
1E1
1E1 1E2 1E3 1E4
tp
Sn u b b e r c ir c u i t
R = 10 o hm s
s
C = 0.47 µF
s
V = 80% V
ST3 33 S Se r i e s
Sinusoid al p ulse
T = 75°C
C
DRM
D
Pu lse Ba se w i dt h ( µs)
1E4
50 Hz
1E3
1E2
2500
3000
1000
1500
2000
Peak O n-sta te C urrent ( A)
1E1
1E11E21E31E4
500
400
Snu b be r c irc uit
R = 10 o h ms
s
C = 0.47 µF
s
V = 80% V
ST333S Series
Trapezoidal pulse
T = 50°C
C
di/dt = 50A/µs
DRM
D
1E4
100
200
Pu lse Ba se w id t h ( µs)
200
400
500
1000
1500
2000
2500
3000
1E1
1E1 1E2 1E3 1E4
Pu lse Ba sew id t h (µ s)
50 Hz
100
Sn u b b e r c i r c u i t
R = 1 0 o h m s
s
C = 0.47 µF
s
V = 80% V
ST3 33 S Se r i e s
Trapezoidal pulse
T = 75°C
C
di/dt = 50A/µs
DRM
D
Fig. 12 - Frequency Characteristics
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Document Number: 94377
6 Revision: 30-Apr-08
Page 8

ST333SP Series
Inverter Grade Thyristors
1E4
100
200
1E3
1000
1500
2000
1E2
3000
2500
Peak O n-sta te C urren t ( A)
1E1
1E1 1E2 1E3 1E4
Pul se Base w id t h ( µs)
1E5
1E4
1E3
1E2
Peak On-state Current (A)
1E1
1E1 1E2 1E3 1E4
0.3
0.2
tp
0.5
ST33 3 S Se r ie s
Sinusoidal pulse
Pulse Ba sew id t h (µs)
500
3
2
1
400
Sn u b b e r c i rc u i t
R = 10 o hm s
C = 0.47 µF
V = 80% V
ST3 33 S Se r i e s
Tr a p e z o id a l p u l se
T = 50 ° C
C
tp
di/dt = 100A/µs
20 jo ule s p er p ulse
10
5
s
s
D
(Stud Version), 330 A
50 Hz
DRM
1E4
Fig. 13 - Frequency Characteristics
1E4
Vishay High Power Products
50 Hz
100
200
400
500
1000
1500
2000
2500
3000
1E1
1E1 1E2 1E3 1E4
Pu lse Ba sew id t h (µ s)
ST33 3 S Se r i es
Rectangular pulse
tp
di/dt = 50A/µs
2
1
0.5
0.4
0.3
0.2
1E1
1E1 1 E2 1E3 1E4
Pulse Ba sew id th (µ s)
ST3 3 3 S Se r i e s
Trapezoidal pulse
T = 7 5 ° C
C
tp
di/dt = 100A/µs
20 jou les pe r p ulse
10
5
3
Sn u b b e r c i r c u i t
R = 10 o hm s
s
C = 0.47 µF
s
V = 80% V
D
DRM
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
(b)
Tj =- 40 ° C
Tj = 2 5 ° C
Tj = 12 5 ° C
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, t p = 5ms
(4) PGM = 60W, t p = 3.3ms
(a)
1
(2)
(3)
Instantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1 10 100
VGD
IGD
De vic e: ST333S Serie s
Fr e q ue n c y Lim i t e d b y PG ( A V)
(1)
(4)
Insta nta neous Gat e Current (A)
Fig. 15 - Gate Characteristics
Document Number: 94377 For technical questions, contact: ind-modules@vishay.com
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Revision: 30-Apr-08 7
Page 9

ST333SP Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
ST 33 3 S 08 P F L 0 P
324
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn-off
4 - S = Compression bonding stud
5 - Voltage code x 100 = V
(see Voltage Ratings table)
6 - P = Stud base 3/4" 16UNF-2A
7 - Reapplied dV/dt code (for t
8 -t
9 - 0 = Eyelet terminals
10
code (L = 15 µs)
q
(gate and auxiliary cathode leads)
1 = Fast-on terminals
(gate and auxiliary cathode leads)
- Lead (Pb)-free
Inverter Grade Thyristors
(Stud Version), 330 A
51
678910
RRM
test condition) F = 200 V/µs
q
Note: For metric device M24 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95080
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8 Revision: 30-Apr-08
Document Number: 94377