C&H Technology ST333SP User Manual

6121 Baker Road, Suite 108 Minnetonka, MN 55345
www.chtechnology.com
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1-800-274-4284
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Application
Assembly
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Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
ST333SP Series
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Lead (Pb)-free
TO-209AE (TO-118)
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
•Inverters
PRODUCT SUMMARY
I
T(AV)
330 A
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 11 000
60 Hz 11 520
50 Hz 605
60 Hz 550
330 A
75 °C
518
A
kA2s
400 to 800 V
15 µs
- 40 to 125 °C
RoHS
COMPLIANT
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
ST333S
Document Number: 94377 For technical questions, contact: ind-modules@vishay.com Revision: 30-Apr-08 1
VOLTAGE
CODE
04 400 500
08 800 900
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
www.vishay.com
MAXIMUM
mA
50
ST333SP Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 330 A
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 840 600 1280 1040 5430 4350
400 Hz 650 450 1280 910 2150 1560
1000 Hz 430 230 1090 730 1080 720
2500 Hz 140 60 490 250 400 190
Recovery voltage V
R
Voltage before turn-on V
D
50 50 50
V
DRM
V
Rise of on-state current dI/dt 50 - - A/µs
Case temperature 50 75 50 75 50 75 °C Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one half cycle, non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA2√s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
T(AV)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
180° conduction, half sine wave
DC at 63 °C case temperature 518
t = 10 ms
t = 8.3 ms 11 520
t = 10 ms
t = 8.3 ms 9700
t = 10 ms
t = 8.3 ms 550
t = 10 ms
t = 8.3 ms 390
No voltage reapplied
100 % V reapplied
No voltage reapplied
100 % V reapplied
ITM = 1810 A, TJ = TJ maximum, t
= 10 ms sine wave pulse
p
(16.7 % x π x I (I > π x I
T(AV)
(16.7 % x π x I (I > π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.92
< I < π x I
T(AV)
), TJ = TJ maximum 0.58
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
DRM
I
TM
RRM
Sinusoidal half wave, initial T
RRM
), TJ = TJ maximum 0.91
T(AV)
), TJ = TJ maximum 0.58
T(AV)
100 µs
V
= TJ maximum
J
DRM
I
TM
330 A
75 °C
11 000
9250
605
430
1.96
A
V
A
kA2s
V
mΩ
mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94377
2 Revision: 30-Apr-08
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