C&H Technology ST333C-C User Manual
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Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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(Hockey PUK Version), 720 A
TO-200AB (E-PUK)
Vishay High Power Products
Inverter Grade Thyristors
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AB (E-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
• Lead (Pb)-free
ST333C..C Series
RoHS
COMPLIANT
PRODUCT SUMMARY
I
T(AV)
720 A
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 11 000
60 Hz 11 500
50 Hz 605
60 Hz 553
Range 10 to 30 µs
720 A
55 °C
1435 A
25 °C
A
kA2s
400 to 800 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
ST333C..C
Document Number: 93678 For technical questions, contact: ind-modules@vishay.com
Revision: 15-May-08 1
VOLTAGE
CODE
04 400 500
08 800 900
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
= TJ MAXIMUM
AT T
J
www.vishay.com
MAXIMUM
mA
50
ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 1630 1420 2520 2260 7610 6820
400 Hz 1630 1390 2670 2330 4080 3600
1000 Hz 1350 1090 2440 2120 2420 2100
2500 Hz 720 550 1450 1220 1230 1027
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA2√s
Maximum peak on-state voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
T(AV)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1435
t = 10 ms
t = 8.3 ms 11 500
t = 10 ms
t = 8.3 ms 9700
t = 10 ms
t = 8.3 ms 553
t = 10 ms
t = 8.3 ms 391
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96
(16.7 % x π x I
(I > π x I
T(AV)
(16.7 % x π x I
(I > π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.93
< I < π x I
T(AV)
), TJ = TJ maximum 0.58
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
V
DRM
I
TM
RRM
Sinusoidal half wave,
initial T
RRM
), TJ = TJ maximum 0.91
T(AV)
), TJ = TJ maximum 0.58
T(AV)
100 µs
V
DRM
= TJ maximum
J
I
TM
720 (350) A
55 (75) °C
11 000
9250
605
428
A
V
A
kA2s
VLow level value of threshold voltage V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS
Maximum non-repetitive rate of rise
of turned on current
Typical delay time t
dI/dt T
d
= TJ maximum, V
J
TJ = 25 °C, VDM = Rated V
= Rated V
DRM
; ITM = 2 x dI/dt 1000 A/µs
DRM
, ITM = 50 A DC, tp = 1 µs
DRM
Resistive load, gate pulse: 10 V, 5 Ω source
TJ = TJ maximum,
= 550 A, commutating dI/dt = 40 A/µs
Maximum turn-off time t
q
I
TM
V
= 50 V, tp = 500 µs, dV/dt: See table in device code
R
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 15-May-08
VALUES
MIN. MAX.
UNITS
1.1
µs
10 30
Document Number: 93678
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