C&H Technology ST333C-C User Manual

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(Hockey PUK Version), 720 A

TO-200AB (E-PUK)

Vishay High Power Products

Inverter Grade Thyristors

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• International standard case TO-200AB (E-PUK)

• High surge current capability

• Low thermal impedance

• High speed performance

• Lead (Pb)-free

ST333C..C Series

RoHS

COMPLIANT

PRODUCT SUMMARY

I

T(AV)

720 A

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 11 000

60 Hz 11 500

50 Hz 605

60 Hz 553

Range 10 to 30 µs

720 A

55 °C

1435 A

25 °C

A

kA2s

400 to 800 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST333C..C

Document Number: 93678 For technical questions, contact: [e-mail]
Revision: 15-May-08 1

VOLTAGE

CODE

04 400 500

08 800 900

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

= TJ MAXIMUM

AT T

J

www.vishay.com

MAXIMUM

mA

50

ST333C..C Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 720 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 1630 1420 2520 2260 7610 6820

400 Hz 1630 1390 2670 2330 4080 3600

1000 Hz 1350 1090 2440 2120 2420 2100

2500 Hz 720 550 1450 1220 1230 1027

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50

V

DRM

Rise of on-state current dI/dt 50 - - A/µs

Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA2√s

Maximum peak on-state voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave
Double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1435

t = 10 ms

t = 8.3 ms 11 500

t = 10 ms

t = 8.3 ms 9700

t = 10 ms

t = 8.3 ms 553

t = 10 ms

t = 8.3 ms 391

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96
(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.93

< I < π x I

T(AV)

), TJ = TJ maximum 0.58

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

V

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 0.91

T(AV)

), TJ = TJ maximum 0.58

T(AV)

100 µs

V

DRM

= TJ maximum

J

I

TM

720 (350) A

55 (75) °C

11 000

9250

605

428

A

V

A

kA2s

VLow level value of threshold voltage V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS

Maximum non-repetitive rate of rise
of turned on current

Typical delay time t

dI/dt T

d

= TJ maximum, V

J

TJ = 25 °C, VDM = Rated V

= Rated V

DRM

; ITM = 2 x dI/dt 1000 A/µs

DRM

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,

= 550 A, commutating dI/dt = 40 A/µs

Maximum turn-off time t

q

I

TM

V

= 50 V, tp = 500 µs, dV/dt: See table in device code

R

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2 Revision: 15-May-08

VALUES

MIN. MAX.

UNITS

1.1

µs

10 30

Document Number: 93678

ST333C..C Series

Inverter Grade Thyristors

Vishay High Power Products

(Hockey PUK Version), 720 A

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

= TJ maximum, linear to 80 % V

T

Maximum critical rate of rise of off-state voltage dV/dt

I

Maximum peak reverse and off-state leakage current

RRM

I

DRM

,

J

higher value available on request

TJ = TJ maximum, rated V

DRM/VRRM

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

applied

,

DRM

500 V/µs

applied 50 mA

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.09

DC operation double side cooled 0.04

DC operation single side cooled 0.020

DC operation double side cooled 0.010

Mounting force, ± 10 %

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)

ΔR

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.010 0.011 0.007 0.007

120° 0.012 0.012 0.012 0.013

90° 0.015 0.015 0.016 0.017

T

60° 0.022 0.022 0.023 0.023

30° 0.036 0.036 0.036 0.037

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 125

- 40 to 150

9800

(1000)

= TJ maximum K/W

J

°C

K/W

N

(kg)

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Revision: 15-May-08 3

ST333C..C Series

Vishay High Power Products

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 30 0 40 0 5 0 0 600

Maximum Allowable Heatsink Temperature (°C)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500 600 700 800 900

Maximum A llowable Heatsink Temperature (°C)

Fig. 2 - Current Ratings Characteristics

ST333C..C Series
(Single Side Coo led)
R ( D C) = 0 .09 K / W

th J-hs

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

ST333C ..C S eries
(Single S ide C oo led)
R ( D C) = 0.09 K/W

th J-hs

Cond uc tion Pe riod

30°

60°

90°

120°

180°

A ve ra g e O n -sta te C u rre n t (A )

DC

Inverter Grade Thyristors

(Hockey PUK Version), 720 A

130

120

110

100

180°

Maximum Allowable Heatsink Temperature (°C)

2200

2000

1800

1600

1400

1200

1000

Maximum Average On-state Power Loss (W)

ST333C..C Series
( Double Side C ooled )
R (DC) = 0.04 K/W

th J-hs

90

80

70

60

50

40

30

20

30°

60°

90°

0 200 400 600 800 10001200 1400 1600

Average On-state Current (A)

Conduction Period

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

800

600

400

200

0

0 200 400 600 800 1000

Averag e O n-state C urren t (A)

RMS Limit

Conduction Angle

ST333 C..C Ser ies
T = 125°C

J

Fig. 5 - On-State Power Loss Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

10

0 200 400 600 800 1 00 0

Maximum Allowable Heatsink Temperature (°C)

ST333 C..C Ser ies
(D o uble Side C oo le d )
R (D C ) = 0.04 K/W

thJ-h s

Conduction Angle

30°

60°

90°

Averag e O n-state C urrent (A )

Fig. 3 - Current Ratings Characteristics

120°

180°

2600

2400

DC

180°

2200

120°

2000

90°

1800

60°

1600

30°
1400
1200
1000

800

600
400
200

0

M ax im um Ave rage On-state P ow er Loss (W )

0 200 400 600 800 1000 1200 1400 1600

Averag e O n-state C urrent (A)

RMS Limit

Conduction Period

ST333C..C Series
T = 125°C

J

Fig. 6 - On-State Power Loss Characteristics

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Document Number: 93678

4 Revision: 15-May-08

ST333C..C Series

Inverter Grade Thyristors

(Hockey PUK Version), 720 A

10000

At An y Rated Loa d Con dition An d W ith

9500

9000

8500

8000

7500

7000

6500

6000

5500

5000

Peak Half Sine Wave On-state Current (A)

4500

Number O f Eq ual Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

12000

11000

10000

Peak Half Sine Wave On-state Current (A)

Fig. 8 - Maximum Non-Repetitive Surge Current

Rated V Applied Following Surge.

RRM

ST333C..C Series

In it i a l T = 1 2 5 °C

J

@ 60 H z 0.0083 s
@ 50 H z 0.0100 s

Single and Double Side Cooled

Max imum N on Repetitive Surg e Current

Versus Pulse Train Duration. C ontrol

Of Conduction May Not Be Maintained.

9000

8000

7000

6000

ST333C..C Series

5000

4000

0.01 0.1 1

Pulse T rain Duration (s)

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

J

RRM

Single and Double Side Cooled

Vishay High Power Products

0.1

ST333C ..C Series

thJ-h s

0.01

0.001

Tran sient The rm al Im peda nce Z (K/W )

001011

0.001 0.01 0.1 1 10

Sq ua re W a ve P u ls e D u r at io n ( s)

Fig. 10 - Thermal Impedance Z

320

300

280

260

240

220

200

180

160

140

120

100

80

10 20 30 40 50 60 70 80 90 100

Maximum R everse Recovery Charg e - Q rr (µC)

Rate Of Fall Of On-state Current - di/dt (A/µs)

Fig. 11 - Reverse Recovered Charge Characteristics

Steady State Value

R = 0 . 0 9 K /W

(Single Side Coo led )

R = 0 . 0 4 K /W

(D o uble S id e C o oled )

(D C O p e ration)

I = 500 A

TM

300 A
200 A

100 A

50 A

th J -h s

thJ-h s

Characteristics

thJ-hs

ST333C..C Series
T = 125 °C

J

10000

T = 25°C

100 0

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

Insta n tan e ous O n-s tate Voltage (V)

J

T = 125°C

J

ST3 33C. .C Serie s

Fig. 9 - On-State Voltage Drop Characteristics

180

160

140

120

100

80

60

40

20

M ax im u m R eve rse R e c o ve ry C u rre n t - Irr (A )

10 20 30 40 50 60 70 80 90 100

Ra te O f Fa ll O f Fo rw ard C urren t - d i/d t (A /µs)

I = 5 00 A

TM

300 A
200 A
100 A

50 A

ST333C ..C S eries
T = 1 2 5 ° C

J

Fig. 12 - Reverse Recovery Current Characteristics

Document Number: 93678 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 15-May-08 5

ST333C..C Series

Vishay High Power Products

1E4

400

500

1000

1500

5000

2500

3000

Pulse Basewidth (µs)

2500

3000

5000

Pulse Basewidth (µs)

200 0

1500

1000

500

tp

400

tp

ST333C..C Series
Trapezoid al p ulse
T = 40°C

C

di/d t = 50A/µs

1E3

Peak On-st ate Current (A)

1E2

1E1 1E2 1E3 1E4

1E4

1E3

Peak On-state C urrent (A)

1E2

1E1 1E2 1E3 1E4

Inverter Grade Thyristors

(Hockey PUK Version), 720 A

200

ST333C..C Series
Sinusoidal pulse
T = 40°C

200

Snubbe r circuit
R = 10 ohm s
C = 0.47 µF
V = 80% V

50 H z

100

Snubb er circu it
R = 10 ohm s

s

C = 0.47 µF

s

V = 80% V

C

DRM

D

Fig. 13 - Frequency Characteristics

50 H z

100

s

s

D DRM

1E1 1E2 1E3 1E4

Snubber circuit
R = 10 ohm s

s

C = 0.47 µF

s

V = 80% V

D

1E11E21E31E4

400

200

500

1000

150 0

2500

3000

5000 ST333C..C Serie s

tp

100

50 Hz

Snubb er circuit
R = 10 ohm s

s

C = 0.47 µF

s

V = 80% V

D

DRM

Sinusoidal pulse
T = 55°C

C

Pulse B a sew idth (µs)

DRM

5000

3000

2500

2000

1500

1000

400

500

ST333C..C Series
Tr a p ezo id a l p uls e
T = 55°C

tp

di/d t = 1 00A/µ s

200

C

100

50 H z

Pulse Basewidth (µs)

Fig. 14 - Frequency Characteristics

1E4

100

200

400

500

1000

1E3

Pea k O n- sta te C u rre nt (A )

1E2

1E1 1E2 1E3 1E4

5000

1500

2000

2500

3000

ST333C..C Series
Trapezoidal pulse
T = 40°C

tp

d i/dt = 100A/µ s

Snubb er circuit
R = 10 ohms

s

C = 0.47 µF

s

V = 80% V

D

C

Pu lse B asew idt h (µs)

50 Hz

DRM

Snubber circuit
R = 10 ohm s

s

C = 0.47 µF

s

V = 80% V

DR M

D

200

400

500

100 0

1500

2000

2500

3000

5000

ST333C..C Series
Tr a p ezo id a l p uls e
T = 55°C

tp

di/d t = 10 0A/µ s

50 Hz

100

C

1E1 1E 2 1 E3 1 E4

Pulse Basew idth (µs)

Fig. 15 - Frequency Characteristics

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Document Number: 93678

6 Revision: 15-May-08

ST333C..C Series

Inverter Grade Thyristors

(Hockey PUK Version), 720 A

1E4

1E3

0.5

0.3

0.2

1E2

Peak On-state C urrent (A)

1E1

1E1 1E2 1E3 1E4

ST33 3C ..C Se ries
Sinusoidal pulse

tp

Pulse Basew idth (µs)

100

Rectangular gate pulse
a ) Re c om m e n d e d lo a d lin e fo r
rated di/dt : 20V, 10ohm s; tr<=1 µs
b ) Re c o m m en d e d lo a d lin e f o r
<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Insta n tan e ou s G ate Vo ltage (V)

0.1

0.001 0.01 0.1 1 10 100

20 joule s pe r pu lse

10

5

3

2

1

Fig. 16 - Maximum On-State Energy Power Loss Characteristics

VGD

IG D

Vishay High Power Products

ST3 3 3 C Se r ies
Re c t a ng ula r puls e
di/dt = 50A/µs

t p

0.3

0.2

1E4

(b)

Tj=25 °C

Tj=125 °C

Device: ST333C..C Series Freq uen cy Lim ite d by PG (AV )

Instan tane ous G ate C urr en t (A )

1E1 1E2 1E3 1E4

Pulse Basew idth (µs)

(1) PGM = 1 0W , tp = 20m s
(2) PGM = 2 0W , tp = 10m s
(3) PGM = 4 0W , tp = 5m s
(4) PGM = 60W, tp = 3.3m s

(a)

Tj=-40 °C

(2)

(1)

(3 )

0.4

(4)

0.5

10

5

3

2

1

20 joules per pulse

Fig. 17 - Gate Characteristics

Document Number: 93678 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 15-May-08 7

ST333C..C Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 33 3 C 08 C H K 1 -

324

1 - Thyristor

2 - Essential part number

3 - 3 = Fast turn off

4 - C = Ceramic PUK

5 - Voltage code x 100 = V

6 - C = PUK case TO-200AB (E-PUK)

7 - Reapplied dV/dt code (for t

8 -t

9 - 0 = Eyelet term.

code

q

(gate and aux. cathode unsoldered leads)

1 = Fast-on term.

(gate and aux. cathode unsoldered leads)

2 = Eyelet term.

(gate and aux. cathode soldered leads)

3 = Fast-on term.

(gate and aux. cathode soldered leads)

Inverter Grade Thyristors

(Hockey PUK Version), 720 A

51

678910

(see Voltage Ratings table)

RRM

test condition)

q

dV/dt - t

dV/dt (V/µs)

tq (µs)

* Standard part number.
All other types available only on request.

combinations available

q

20 50 100 200 400

10 CN DN EN -- -­12 CM DM EM FM* -­15 CL DL EL FL* HL
18 CP DP EP FP HP
20 CK DK EK FK HK
25 -- -- -- FJ HJ
30 -- -- -- -- HH

- Critical dV/dt:

10

None = 500 V/µs (standard value)

L = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95075

www.vishay.com For technical questions, contact: [e-mail]
8 Revision: 15-May-08

Document Number: 93678