C&H Technology ST330SPbF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 330 A

FEATURES

• Center amplifying gate

• International standard case TO-209AE (TO-118)

• Hermetic metal case with ceramic insulator

• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling

• Lead (Pb)-free

• Designed and qualified for industrial level

ST330SPbF Series

RoHS

COMPLIANT

TO-209AE (TO-118)

TYPICAL APPLICATIONS

• DC motor controls

PRODUCT SUMMARY

I

T(AV)

330 A

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 9000

60 Hz 9420

50 Hz 405

60 Hz 370

Typical 100 µs

330 A

75 °C

520

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

A

kA2s

VOLTAGE RATINGS

V

TYPE NUMBER

ST330S

Document Number: 94409 For technical questions, contact: [e-mail]
Revision: 06-May-08 1

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

www.vishay.com

MAXIMUM

mA

50

ST330SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 330 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4050 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave 330 A

75 °C

DC at 75 °C case temperature 520

t = 10 ms

t = 8.3 ms 9420

t = 10 ms

t = 8.3 ms 7920

t = 10 ms

t = 8.3 ms 370

t = 10 ms

t = 8.3 ms 262

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.898

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.636

T(AV)

), TJ = TJ maximum 0.834

T(AV)

), TJ = TJ maximum 0.687

T(AV)

9000

7570

405

287

Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V

TJ = 25 °C, anode supply 12 V resistive load

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

RRM,

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 50 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94409

2 Revision: 06-May-08

ST330SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 330 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.8 3

T

J

= 125 °C 1.1 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thC-hs

DC operation 0.10

Mounting surface, smooth, flat and greased 0.03

Mounting torque, ± 10 % Non-lubricated threads

Approximate weight 535 g

Case style See dimension - link at the end of datasheet TO-209AE (TO-118)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.011 0.008

120° 0.013 0.014

T

90° 0.017 0.018

= TJ maximum K/W

J

60° 0.025 0.026

30° 0.041 0.042

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

48.5

(425)

(lbf · in)

°C

K/W

N · m

Document Number: 94409 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 06-May-08 3

ST330SPbF Series

Vishay High Power Products

130

120

110

100

90

80

70

Maximum Allowab le Case Temperature (°C)

0 50 100 150 200 250 300 350

ST3 30 S Se r i e s
R (DC) = 0.10 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

480

440

400

360

320

280

240

200

160

120

80

180°
120°

90°
60°
30°

RM S Lim it

40

0

Maximum Average On-state Power Loss (W)

0 50 100 1 50 200 250 300 350

Average On-state Current (A)

Phase Control Thyristors

(Stud Version), 330 A

130

120

110

100

90

80

180°

0

.

0

8

K

/

W

0

.

1

2

K

/

W

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

Conduction Angle

ST3 3 0S Se r i e s
T = 12 5° C

J

W

0

.

6

K

/

W

1

.

2

K

/

W

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

70

60

Maximum Allowable Case Temperature (°C)

0 100 200 300 400 500 600

R

t

h

S

A

=

0

.

0

3

K

/

W

ST3 3 0S Se r i e s
R (DC) = 0.10 K/ W

thJC

Conduction Period

30°

60°

90°

120°

180°

Average On-st ate Current (A)

­D

e

l

t

a

R

DC

650

600

550

500

450

400

350

300

250

200

150

100

50

Maximum Average On-state Power Loss (W)

DC
180°
120°

90°

60°

30°

RM S Li m it

Conduc tion Period

ST3 30 S Se r i e s
T = 125°C

J

0

0 100 200 300 400 500 600

Average On-st ate Current (A)

R

t

hS

=

A

0.0

0

.

0

0

.

1

0

.

2

0

.

3

0

.

4

0

.

6

1

.

2

3 K/W

8

K

/

W

2

K

/

W

K

/

W

K

/

W

K

/

W

K

/

W

K

/

W

-

De

lta R

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94409

4 Revision: 06-May-08

ST330SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 330 A

8000

At Any Rated Load C ond ition And With

Rated V Applied Following Surge.

7500

7000

6500

6000

5500

5000

4500

ST3 3 0S Se r i e s

4000

3500

Pe a k Half Sine Wa ve On-state Current (A)

110100

Numbe r Of Equa l Amplitud e Half Cy c le Current Pulse s (N)

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000

9000

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Cont rol

Of Conduction May Not Be Maintained.

8000

7000

6000

5000

Pe a k Ha lf Sin e W a ve On -st a t e C urr ent (A )

4000

3000

ST330S Se rie s

0.01 0.1 1

Pulse Train Duration (s)

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

RRM

J

1

thJC

0.1

0.01

1000

Instantaneous On-state Current (A)

100

St e a d y St a t e V a l u e

R = 0.10 K/ W

thJC

(DC Operation)

Tj = 25 °C

Tj = 125 °C

ST330S Series

0123 4567

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

ST3 3 0 S Se r i e s

0.001

Transient Thermal Impedance Z (K/W)

0.001 0.01 0. 1 1 10

Sq u a r e W a v e P u l se D u r a t i o n ( s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

Document Number: 94409 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 06-May-08 5

ST330SPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rat ed d i/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Inst an ta n e ous Ga te Vo lta ge (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

Phase Control Thyristors

(Stud Version), 330 A

(a)

(b)

Tj = -4 0 °C

Tj = 2 5 ° C

Tj = 1 2 5 ° C

IGD

D e v i c e : ST3 30 S Se r ie s

In st a n t a n e o us G a t e C ur re n t ( A )

Fig. 9 - Gate Characteristics

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, t p = 0.66ms

(2)

(1)

Frequenc y Limited by PG(AV)

(3)

(4)

Device code

ST 33 0 S 16 P 0 PbF

51324678

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- S = Compression bonding stud

5

- Voltage code x 100 = V

6

- P = Stud base 3/4"-16UNF-2A threads

7

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode leads)

8 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95080

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 06-May-08

Document Number: 94409