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TO-209AE (TO-118)
PRODUCT SUMMARY
I
T(AV)
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
•Inverters
• Choppers
300 A
• Induction heating
• All types of force-commutated converters
ST303SPbF Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 7950
60 Hz 8320
50 Hz 316
60 Hz 288
300 A
65 °C
471
400 to 1200 V
10/20 µs
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
ST303S
V
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
A
kA2s
MAXIMUM
= TJ MAXIMUM
J
mA
50
Document Number: 94375 For technical questions, contact: ind-modules@vishay.com
Revision: 30-Apr-08 1
www.vishay.com
ST303SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 300 A
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 670 470 1050 940 5240 4300
400 Hz 480 330 1021 710 1800 1270
1000 Hz 230 140 760 470 730 430
2500 Hz 35 - 150 - 90 -
Recovery voltage V
R
Voltage before turn-on V
D
50 50 50
V
DRM
V
Rise of on-state current di/dt 50 - - A/µs
Case temperature 40 65 40 65 40 65 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 kA2√s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
T(AV)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
180° conduction, half sine wave
DC at 45 °C case temperature 471
t = 10 ms
t = 8.3 ms 8320
t = 10 ms
t = 8.3 ms 7000
t = 10 ms
t = 8.3 ms 288
t = 10 ms
t = 8.3 ms 204
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
ITM = 1255 A, TJ = TJ maximum,
t
= 10 ms sine wave pulse
p
(16.7 % x π x I
(I > π x I
T(AV)
(16.7 % x π x I
(I > π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 1.46
< I < π x I
T(AV)
), TJ = TJ maximum 0.56
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
DRM
I
TM
RRM
Sinusoidal half wave,
initial T
RRM
), TJ = TJ maximum 1.44
T(AV)
), TJ = TJ maximum 0.57
T(AV)
100 µs
V
= TJ maximum
J
DRM
I
TM
300 A
65 °C
7950
6690
316
224
2.16
A
V
A
kA2s
V
mΩ
mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94375
2 Revision: 30-Apr-08