C&H Technology ST303SPbF User Manual

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TO-209AE (TO-118)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 300 A

FEATURES

• Center amplifying gate

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

•Inverters

• Choppers

300 A

• Induction heating

• All types of force-commutated converters

ST303SPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 7950

60 Hz 8320

50 Hz 316

60 Hz 288

300 A

65 °C

471

400 to 1200 V

10/20 µs

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST303S

V

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

50

Document Number: 94375 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 1

www.vishay.com

ST303SPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 300 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 670 470 1050 940 5240 4300

400 Hz 480 330 1021 710 1800 1270

1000 Hz 230 140 760 470 730 430

2500 Hz 35 - 150 - 90 -

Recovery voltage V

R

Voltage before turn-on V

D

50 50 50

V

DRM

V

Rise of on-state current di/dt 50 - - A/µs

Case temperature 40 65 40 65 40 65 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 kA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave

DC at 45 °C case temperature 471

t = 10 ms

t = 8.3 ms 8320

t = 10 ms

t = 8.3 ms 7000

t = 10 ms

t = 8.3 ms 288

t = 10 ms

t = 8.3 ms 204

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 1255 A, TJ = TJ maximum,
t

= 10 ms sine wave pulse

p

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.46

< I < π x I

T(AV)

), TJ = TJ maximum 0.56

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 1.44

T(AV)

), TJ = TJ maximum 0.57

T(AV)

100 µs

V

= TJ maximum

J

DRM

I

TM

300 A

65 °C

7950

6690

316

224

2.16

A

V

A

kA2s

V

mΩ

mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94375

2 Revision: 30-Apr-08

ST303SPbF Series

Inverter Grade Thyristors

Vishay High Power Products

(Stud Version), 300 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

dI/dt

d

minimum

Maximum turn-off time

maximum 20

t

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage current

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

= TJ maximum, V

T

J

= Rated V

DRM

DRM

ITM = 2 x dI/dt

TJ = 25 °C, VDM = Rated V

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,
I

= 550 A, commutating dI/dt = 40 A/µs

TM

V

= 50 V, tp = 500 µs, dV/dt = 200 V/µs

R

= TJ maximum, linear to 80 % V

T

J

higher value available on request

I

RRM

I

DRM

G(AV)

GM

GT

GD

GM

GM

GM

GT

GD

TJ = TJ maximum, rated V

DRM/VRRM

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

1000 A/µs

0.80

10

,

DRM

500 V/µs

applied 50 mA

60

10

10 A

20

200 mA

applied

20 mA

0.25 V

µs

W

5

V

3V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.10

Mounting surface, smooth, flat and greased 0.03

Mounting force, ± 10 % Non-lubricated threads

Approximate weight 535 g

Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)

Document Number: 94375 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 3

- 40 to 125

- 40 to 150

48.5

(425)

°C

K/W

N · m

(lbf · in)

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ST303SPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 300 A

ΔR

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.011 0.008

120° 0.013 0.014

T

90° 0.017 0.018

= TJ maximum K/W

J

60° 0.025 0.026

30° 0.041 0.042

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

ST3 03 S Se r i e s
R ( D C ) = 0 .1 0 K/ W

thJC

130

120

110

ST3 03 S Se r i e s
R ( DC) = 0.10 K/ W

thJC

100

60°

90°

120°

Conduction Period

180°

DC

100

90

30°

80

70

60

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300 350

Conduc tion Angle

60°

90°

120°

Average On-state Current (A)

180°

90

80

70

30°

60

50

40

Maximum Allowable Case Temperature (°C)

0100200300400500

Average On-state C urrent (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

600

500

180°
120°

90°

400

300

200

100

0

Maximum Average On-state Power Loss (W)

0 50 100 150 200 250 300

60°
30°

RM S Li m i t

Conduc tion Angle

ST303S Series
T = 12 5 ° C

J

Average On-state Current (A)

0

0

0

.

1

0

0

0

25 50 75 100 125

Maximum Allowab le Ambient Temperature (°C)

R

0

.

0

3

t

h

K

0

.

0

.

0

8

.

1

2

6

.

2

.

3

.

5

S

A

/

W

6

K/

K

/

W

K

/

K

/

W

K

/

W

K

/

W

K

/

W

=

0

.

W

W

0

1

K

/

W

­D

e

l

t

a

R

Fig. 3 - On-State Power Loss Characteristics

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Document Number: 94375

4 Revision: 30-Apr-08

ST303SPbF Series

900

800

700

600

DC
180°
120°

90°

60°

30°

500

400

RM S Lim it

300

200

100

0

Maximum Averag e On-sta te Power Loss (W)

0 50 100150200250300350400450500

Average On-state Current (A)

7000

At Any Rated Load Cond ition And With

Ra te d V A p plie d Follo win g Surg e.

6500

RRM

6000

5500

Inverter Grade Thyristors

(Stud Version), 300 A

Fig. 4 - On-State Power Loss Characteristics

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Conduc tion Period

ST3 03 S Se r i e s
T = 12 5°C

J

Vishay High Power Products

R

t

h

S

A

=

0

0

.

0

.

0

3

1

K

K

/

W

/

0

.

0

6

0

.

1

2

0

.

2

0

.

3

0

.

5

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

W

-

K

/

K

/

K

/

W

K

/

W

K

/

D

W

W

W

e

l

t

a

R

10000

5000

4500

4000

ST3 0 3 S Se r i e s

3500

Pe a k Ha lf Sine Wave On-st ate Current (A)

3000

110100

Numb er Of Eq ual Amplitud e Half Cycle Current Pulse s (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

8000

Maximum Non Repetitive Surge Current

7500

7000

6500

6000

Versus Pulse Train Duration. Control

Of Cond uction May Not Be Maintained.

Init ial T = 125°C

No Voltage Reapplied
Rated V Reapplied

J

RRM

5500

5000

4500

Peak Half Sine Wave On-state Current (A)

4000

3500

3000

ST3 0 3 S Se r i e s

0.01 0.1 1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitve Surge Current

1000

T = 2 5 ° C

J

T = 12 5° C

J

ST3 03 S Se r i e s

Instantaneous On-state Current (A)

100

12345678

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

1

St e a d y St a t e V a l u e

R = 0. 10 K/ W

thJC

thJC

(DC Operation)

0.1

0.01

ST3 0 3S Se r i e s

0.001

Transient Thermal Impedance Z (K/W)

0.001 0.01 0.1 1 10

Sq u a r e Wa v e Pu l se D u ra t i o n ( s )

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

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Revision: 30-Apr-08 5

ST303SPbF Series

Vishay High Power Products

320

300

280

260

240

220

200

180

160

140

120

100

80

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Rec overy Ch arge - Qrr (µC)

Rate Of Fall Of On-state Current - di/dt (A/µs)

Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics

1E4

1E3

1E2

2500

Pea k O n - sta t e Curre n t (A )

1E1

1E1 1E2 1E3 1E4

I = 500 A

TM

300 A
200 A
100 A

50 A

ST3 0 3 S Se r i e s
T = 12 5 ° C

500

1000

1500

2000

Pu l se Ba se w id t h ( µs)

J

200

400

tp

Inverter Grade Thyristors

(Stud Version), 300 A

50 Hz

100

Snu b b er c irc uit
R = 10 oh ms

s

C = 0.47 µF

s

V = 80% V

D

ST3 03 S Series
Sinusoidal pulse
T = 40°C

C

DRM

Fig. 11 - Frequency Characteristics

180

160

140

I = 500 A

TM

300 A
200 A
100 A

50 A

120

100

80

60

ST3 03 S Se r ie s
T = 125 °C

J

40

20

Maximum Reverse Recovery Current - Irr (A)

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of On-state Current - di/dt (A/µs)

50 Hz

100

200

400

500

1000

tp

Sn ub b e r c i rc u i t
R = 10 ohms

s

C = 0.47 µF

s

V = 80% V

D

ST3 03 S Se r ie s
Si n u so i d a l p u l se
T = 65 ° C

C

DRM

1500

1 E1 1 E2 1 E3 1 E4

Pu lse Ba se w id t h ( µs)

1E4

1E3

1000

1E2

2500

1E1

Peak On-state Current (A)

1E0

1E1 1E2 1E3 1E4

1500

2000

500

400

100

200

Sn u b b e r c i r c u i t
R = 1 0 o h m s

s

C = 0.47 µF

s

V = 80% V

D

ST3 03 S Se r ie s
Trapezoidal pulse
T = 40 ° C

C

di/dt = 50A/µs

Pu lse Ba se w id t h ( µs)

50 Hz

DRM

200

400

500

1000

1500

2000

1E1 1E2 1E3 1E4

Pulse Ba sew id th (µ s)

50 Hz

100

Snubb er circuit
R = 1 0 o hm s

s

C = 0.47 µF

s

V = 80% V

ST3 0 3S Se r i e s
Trapezoidal pulse
T = 65°C

C

di/dt = 50A/µs

DRM

D

Fig. 12 - Frequency Characteristics

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Document Number: 94375

6 Revision: 30-Apr-08

ST303SPbF Series

Inverter Grade Thyristors

(Stud Version), 300 A

1E4

50 Hz

100

1E3

1000

1E2

1E1

Peak On-state Current (A)

1E0

1E1 1E2 1E3 1E4

1500

2000

2500

Pu lse Ba se w id t h ( µs)

1E5

1E4

3

2

0.5

0.4

tp

1

ST30 3 S Se r ie s
Sinuso idal pulse

1E3

1E2

Peak On-state Current (A)

1E1

1 E1 1 E2 1 E3 1 E4

Pulse Basew id th ( µ s)

400

500

tp

20 joules p er pulse

10

5

200

Snub ber circuit
R = 10 o h m s

s

C = 0.47 µF

s

V = 80% V

D

ST3 03 S Se ri e s
Trapezoidal pulse
T = 40 ° C

C

d i/ d t = 100A / µs

DRM

1 E1 1 E2 1 E3 1 E4

Fig. 13 - Frequency Characteristics

1E1 1E2 1E3 1E4

Vishay High Power Products

50 Hz

100

200

400

500

ST30 3 S Se r ie s
Re ctangular pulse

tp

di/dt = 50A/µs

1000

1500

2000

Pu l se Ba se w id t h ( µs)

2

1

0.5

0.4

Pulse Ba se wid th ( µs)

tp

3

Sn u b b e r c i rc u i t
R = 10 o hms

s

C = 0.47 µF

s

V = 80% V

D

ST3 03 S Series
Trapezoidal pulse
T = 6 5 ° C

C

di / d t = 100A/µs

20 jou le s p er p ulse

10

5

DRM

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

100

Rectangular gate pulse
a) Recommended load line for
rat ed d i/ dt : 20V, 10ohms; t r<=1 µs
b) Recommended load line for

<=30% ra ted d i/d t : 10V, 10ohms

10

tr<=1 µs

(a)

(b)

Tj= -4 0 ° C

Tj =2 5 ° C

Tj = 12 5 ° C

(1) PGM = 10W, t p = 20ms
(2) PGM = 20W, t p = 10ms
(3) PGM = 40W, t p = 5ms
(4) PGM = 60W, t p = 3.3ms

1

(2)

(3)

(1)

Insta nt a n eo us Ga t e Vo lt a ge ( V)

0.1

0.001 0.01 0. 1 1 10 100

VGD

IG D

De vic e: ST303S Serie s

Frequency Limited b y PG(AV)

(4)

Insta nt a ne ou s Ga te Curre nt (A )

Fig. 15 - Gate Characteristics

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Revision: 30-Apr-08 7

ST303SPbF Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 30 3 S 12 P F K 0 P

324

1 - Thyristor

2 - Essential part number

3 - 3 = Fast turn-off

4 - S = Compression bonding stud

5 - Voltage code x 100 = V

(see Voltage Ratings table)

6 - P = Stud base 3/4" 16UNF-2A

7 - Reapplied dV/dt code (for t

8 -t

9 - 0 = Eyelet terminals

10

code

q

(gate and auxiliary cathode leads)

1 = Fast-on terminals

(gate and auxiliary cathode leads)

- Lead (Pb)-free

Inverter Grade Thyristors

(Stud Version), 300 A

51

678910

RRM

test condition)

q

dV/dt - tq combinations available

dV/dt (V/µs) 200

(µs)

t

q

up to 800 V

(µs)

t

q

only for
1000/1200 V

10
20

20

FN
FK

FK

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95080

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8 Revision: 30-Apr-08

Document Number: 94375