C&H Technology ST303CPbF User Manual

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TO-200AB (E-PUK)

Vishay High Power Products

Inverter Grade Thyristors

(PUK Version), 620 A

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• International standard case TO-200AB (E-PUK)

• High surge current capability

• Low thermal impedance

• High speed performance

• Lead (Pb)-free

• Designed and qualified for industrial level

ST303CPbF Series

RoHS

COMPLIANT

PRODUCT SUMMARY

I

T(AV)

620 A

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

Note

(1)

tq = 10 to 20 µs for 400 to 800 V devices
t

= 15 to 30 µs for 1000 to 1200 V devices

q

T

hs

T

hs

50 Hz 7950

60 Hz 8320

50 Hz 316

60 Hz 289

(1)

Range

620 A

55 °C

1180 A

25 °C

400 to 1200 V

10 to 30 µs

- 40 to 125 °C

A

kA2s

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST303C..C

Document Number: 94373 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 1

VOLTAGE

CODE

04 400 500

08 800 900

10 1000 1100

12 1200 1300

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

www.vishay.com

MAXIMUM

mA

50

ST303CPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(PUK Version), 620 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 1314 1130 2070 1940 6930 6270

400 Hz 1260 1040 2190 1880 3440 2960

1000 Hz 900 700 1900 1590 1850 1540

2500 Hz 340 230 910 710 740 560

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50

V

DRM

V

Rise of on-state current dI/dt 50 - - A/µs

Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 klA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1180

t = 10 ms

t = 8.3 ms 8320

t = 10 ms

t = 8.3 ms 7000

t = 10 ms

t = 8.3 ms 289

t = 10 ms

t = 8.3 ms 204

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 1255 A, TJ = TJ maximum,

= 10 ms sine wave pulse

t

p

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.48

< I < π x I

T(AV)

), TJ = TJ maximum 0.56

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 1.44

T(AV)

), TJ = TJ maximum 0.57

T(AV)

100 µs

V

= TJ maximum

J

DRM

I

TM

620 (230) A

55 (85) °C

7950

6690

316

224

2.16

A

V

kA

mΩ

mA

A

2

s

V

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94373

2 Revision: 30-Apr-08

ST303CPbF Series

Inverter Grade Thyristors

Vishay High Power Products

(PUK Version), 620 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned on current

Typical delay time t

minimum

Maximum turn-off time

(1)

maximum 30

Note

(1)

tq = 10 to 20 µs for 400 to 800 V devices; tq = 15 to 30 µs for 1000 to 1200 V devices

dI/dt

d

t

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage current

= TJ maximum, V

T

J

= Rated V

DRM

DRM

ITM = 2 x dI/dt

TJ = 25 °C, VDM = Rated V

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,
I

= 550 A, commutating dI/dt = 40 A/µs

TM

V

= 50 V, tp = 500 µs, dV/dt: See table in device code

R

= TJ maximum, linear to 80 % V

T

J

higher value available on request

,

I

RRM

I

DRM

TJ = TJ maximum, rated V

DRM/VRRM

1000 A/µs

0.83

10

,

DRM

500 V/µs

applied 50 mA

µs

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

applied

60

10

W

10 A

20

5

V

200 mA

3V

20 mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.09

DC operation double side cooled 0.04

DC operation single side cooled 0.020

DC operation double side cooled 0.010

Mounting force, ± 10 %

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)

- 40 to 125

- 40 to 150

9800

(1000)

°C

K/W

N

(kg)

Document Number: 94373 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 30-Apr-08 3

ST303CPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(PUK Version), 620 A

ΔR

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

CONDUCTION ANGLE

180° 0.010 0.010 0.007 0.007

120° 0.012 0.012 0.012 0.013

90° 0.015 0.015 0.016 0.017

60° 0.022 0.022 0.023 0.023

30° 0.036 0.036 0.036 0.037

130

120

110

100

90

80

70

Maximum Allowable

60

Heatsink Temperature (°C)

50

40

0

50

Average On-State Current (A)

Fig. 1 - Current Ratings Characteristics

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

ST303C..C Series
(Single side cooled)

(DC) = 0.09 K/W

R

thJ-hs

Ø

Conduction angle

180°

100

60°30° 90°

150 200

250 300 350 400

120°

TEST CONDITIONS UNITS

= TJ max. K/W

T

J

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

100

90

80

70

60

50

Maximum Allowable

40

Heatsink Temperature (°C)

30

20

0

30°

100 200

ST303C..C Series
(Double side cooled)
R

thJ-hs

60°

90°

400300 500 600 700 800

Average On-State Current (A)

Fig. 3 - Current Ratings Characteristics

(DC) = 0.04 K/W

Ø

Conduction angle

180°

120°

130

120

110

100

90

80

70

60

50

Maximum Allowable

40

Heatsink Temperature (°C)

30

20

0

60°

30°

200 400

100 300

ST303C..C Series
(Single side cooled)

(DC) = 0.09 K/W

R

thJ-hs

Conduction period

90°

180°

120°

Ø

DC

500 600 700

Average On-State Current (A)

Fig. 2 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

Maximum Allowable

40

Heatsink Temperature (°C)

30

20

0

30°

200 400

60°

90°

600 800

ST303C..C Series
(Double side cooled)

(DC) = 0.04 K/W

R

thJ-hs

Ø

Conduction period

180°

120°

1000

DC

1200

Average On-State Current (A)

Fig. 4 - Current Ratings Characteristics

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Document Number: 94373

4 Revision: 30-Apr-08

ST303CPbF Series

2000

1800

1600

1400

1200

1000

800

600

Power Loss (W)

400

Maximum Average On-State

200

2800

2400

2000

1600

1200

Power Loss (W)

800

Inverter Grade Thyristors

(PUK Version), 620 A

180°
120°
90°
60°
30°

RMS limit

Ø

Conduction angle

ST303C..C Series

= 125 °C

T

0

100 300200 400

0

Average On-State Current (A)

Fig. 5 - On-State Power Loss Characteristics

DC
180°
120°
90°
60°
30°

RMS limit

J

500 600 700 800

Ø

Conduction period

Vishay High Power Products

8000

7500

7000

6500

6000

5500

5000

4500

On-State Current (A)

Peak Half Sine Wave

4000

3500

3000

0.01 0.1 1

Fig. 8 - Maximum Non-Repetitive Surge Current

10 000

1000

Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained

ST303C..C Series

Single and Double Side Cooled

Initial TJ = 125 °C
No voltage reapplied
Rated V

RRM

Pulse Train Duration (s)

TJ = 25 °C

TJ = 125 °C

reapplied

400

Maximum Average On-State

0

200

0

Average On-State Current (A)

Fig. 6 - On-State Power Loss Characteristics

7500

7000

6500

6000

5500

5000

4500

On-State Current (A)

4000

Peak Half Sine Wave

3500

3000

At any rated load condition and with
rated V

ST303C..C Series

1 10 100

Number of Equal Amplitude Half Cycle

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

ST303C..C Series

= 125 °C

T

J

400 600 800 1000 1200

applied following surge

RRM

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Current Pulses (N)

Instantaneous On-State Current (A)

100

012345678

Instantaneous On-State Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

1

ST303C..C Series

0.1

Transient Thermal

-

0.01

Impedance (K/W)

thJ-hs

Z

0.001

0.01 0.1 1 100.001

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

ST303C..C Series

Steady state value

= 0.09 K/W

R

thJ-hs

(Single side cooled)
R

= 0.04 K/W

thJ-hs

(Double side cooled)
(DC operation)

Characteristics

thJ-hs

Document Number: 94373 For technical questions, contact: [e-mail]

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Revision: 30-Apr-08 5

ST303CPbF Series

Vishay High Power Products

320

300

280

260

240

220

200

180

160

140

120

100

80

- Maximum Reverse Recovery Charge (µC)

rr

dI/dt - Rate of Fall of On-State Current (A/µs)

Q

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovered Current Characteristics

10 000

1000

Peak On-State Current (A)

100

10 100 1000 10 000

ITM = 500 A

= 300 A

I

TM

= 200 A

I

TM

= 100 A

I

TM

= 50 A

I

TM

ST303C..C Series
T

= 125 °C

J

2010 30 50 70 9040 60 80 100

200

400

500

1000

1500

2000

2500

3000

Snubber circuit
R

C
V

ST303C..C Series
Sinusoidal pulse

t

p

= 40 °C

T

C

Pulse Basewidth (µs)

Inverter Grade Thyristors

(PUK Version), 620 A

50 Hz

100

= 10 Ω

s

= 0.47 µF

s

= 80 % V

D

DRM

Fig. 13 - Frequency Characteristics

180

160

140

120

ITM = 500 A
I

= 300 A

TM

I

= 200 A

TM

I

= 100 A

TM

I

= 50 A

TM

100

80

60

ST303C..C Series
T

= 125 °C

J

40

20

- Maximum Reverse Recovery Current (A)

rr

I

20 30 50 70 9010 40 60 80 100

dI/dt - Rate of Fall of Forward Current (A/µs)

10 000

200

400

500

1000

Peak On-State Current (A)

100

1000

1500

2000

2500

3000

10 100 1000 10 000

Snubber circuit
R
C
V

ST303C..C Series
Sinusoidal pulse

t

p

= 55 °C

T

C

= 10 Ω

s

= 0.47 µF

s

D

Pulse Basewidth (µs)

50 Hz

100

= 80 % V

DRM

10 000

Snubber circuit

= 10 Ω

R

s

= 0.47 µF

C

s

= 80 % V

V

D

DRM

1000

2000

2500

Peak On-State Current (A)

100

10 100 1000 10 000

3000

Pulse Basewidth (µs)

1500

500

1000

t

200

p

50 Hz

100

400

ST303C..C Series
Trapezoidal pulse

= 40 °C

T

C

dI/dt = 50 A/µs

10 000

Snubber circuit

= 10 Ω

R

s

= 0.47 µF

C

s

= 80 % V

V

D

DRM

1000

1500

2500

2000

Peak On-State Current (A)

100

3000

10 100 1000 10 000

Pulse Basewidth (µs)

1000

200

500

400

ST303C..C Series
Trapezoidal pulse
T

t

p

dI/dt = 50 A/µs

50 Hz

100

= 55 °C

C

Fig. 14 - Frequency Characteristics

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Document Number: 94373

6 Revision: 30-Apr-08

ST303CPbF Series

10 000

Snubber circuit

= 10 Ω

R

s

= 0.47 µF

C

s

= 80 % V

V

D

DRM

400

1000

1500

2000

2500

Peak On-State Current (A)

100

3000

10 100 1000 10 000

Pulse Basewidth (µs)

100 000

10 000

1000

100

Peak On-State Current (A)

10

10 100 1000 10 000

ST303C..C Series
Sinusoidal pulse

t

p

Pulse Basewidth (µs)

1000

0.4

Inverter Grade Thyristors

Vishay High Power Products

(PUK Version), 620 A

10 000

Snubber circuit

50 Hz

200

100

500

ST303C..C Series
Trapezoidal pulse
T

C

t

p

dI/dt = 100 A/µs

= 40 °C

Peak On-State Current (A)

Fig. 15 - Frequency Characteristics

20 joules per pulse

10

3

5

2

1

0.5

Peak On-State Current (A)

Fig. 16 - Maximum On-State Energy Power Loss Characteristics

R
C
V

1000

100

10 100 1000 10 000

100 000

10 000

1000

100

10

10 100 1000 10 000

= 10 Ω

s

= 0.47 µF

s

= 80 % V

D

2000

2500

3000

t

p

0.5

DRM

400

500

1000

1500

200

ST303C..C Series
Trapezoidal pulse
T

C

t

p

dI/dt = 100 A/µs

Pulse Basewidth (µs)

ST303C..C Series
Rectangular pulse
dI/dt = 50 A/µs

3

2

1

0.4

Pulse Basewidth (µs)

50 Hz

100

= 55 °C

20 joules per pulse

5

10

100

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω

10

≤ 1 µs

t

r

1

Instantaneous Gate Voltage (V)

V

≤ 1 µs

r

GD

(a)

(b)

T

J

T

J

= 25 °C

= 40 °C

T

J

= 125 °C

I

GD

Device: ST303C..C Series

(1) PGM = 10 W, tp = 20 ms

= 20 W, tp = 10 ms

(2) P

GM

= 40 W, tp = 5 ms

(3) P

GM

= 60 W, tp = 3.3 ms

(4) P

GM

(1) (2)

Frequency limited by P

(3) (4)

G(AV)

0.1

0.001

0.01 0.1 1 10 100

Instantaneous Gate Current (A)

Fig. 17 - Gate Characteristics

Document Number: 94373 For technical questions, contact: [e-mail]

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Revision: 30-Apr-08 7

ST303CPbF Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 30 3 C 12 C H K 1 - P

324

1 - Thyristor

2 - Essential part number

3 - 3 = Fast turn-off

4 - C = Ceramic PUK

5 - Voltage code x 100 = V

(see Voltage Ratings table)

6 - C = PUK case TO-200AB (E-PUK)

7 - Reapplied dV/dt code (for t

8 -t

9 - 0 = Eyelet terminals

10

11

code

q

(gate and aux. cathode unsoldered leads)

1 = Fast-on terminals

(gate and aux. cathode unsoldered leads)

2 = Eyelet terminals

(gate and aux. cathode soldered leads)

3 = Fast-on terminals

(gate and aux. cathode soldered leads)

- Critical dV/dt:

None = 500 V/µs (standard value)

L = 1000 V/µs (special selection)

- P = Lead (Pb)-free

Inverter Grade Thyristors

(PUK Version), 620 A

51

6 7 8 9 10 11

RRM

test condition)

q

t

up to 800 V

t

only for
1000/1200 V

* Standard part number.
All other types available only on request.

dV/dt - tq combinations available

dV/dt (V/µs) 20 50 100 200 400

q

q

(µs)

(µs)

10
12
15 CL DL EL FL* HL
20 CK DK EK FK* HK

15
18
20 CK DK EK FK* HK
25 CJ DJ EJ FJ* HJ
30

CN DN EN

CM DM EM FM HM

CL - ­CP DP - -

-DHEHFHHH

FN* HN

--

-

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95075

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8 Revision: 30-Apr-08

Document Number: 94373