C&H Technology ST303CLPbF User Manual

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Suite 108
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TO-200AC (B-PUK)

PRODUCT SUMMARY

I

T(AV)

ST303CLPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• International standard case TO-200AC (B-PUK)

• High surge current capability

• Low thermal impedance

• High speed performance

• Lead (Pb)-free

• Designed and qualified for industrial level

515 A

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

Note

(1)

tq = 10 to 20 µs for 400 to 800 V devices
t

= 15 to 30 µs for 1000 to 1200 V devices

q

T

hs

T

hs

50 Hz 7950

60 Hz 8320

50 Hz 316

60 Hz 289

(1)

Range

515 A

55 °C

995 A

25 °C

400 to 1200 V

10 to 30 µs

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST303C..L

V

VOLTAGE

CODE

04 400 500

08 800 900

10 1000 1100

12 1200 1300

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

J

A

kA2s

MAXIMUM

= TJ MAXIMUM

mA

50

Document Number: 94374 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 1

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ST303CLPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 1130 950 1800 1540 5660 4990

400 Hz 1010 820 1850 1570 2830 2420

1000 Hz 680 530 1560 1300 1490 1220

2500 Hz 230 140 690 510 540 390

Recovery voltage V

R

Voltage before turn-on V

D

50 50 50

V

DRM

V

Rise of on-state current dI/dt 50 - - A/µs

Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state
current at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 kA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 995

t = 10 ms

t = 8.3 ms 8320

t = 10 ms

t = 8.3 ms 7000

t = 10 ms

t = 8.3 ms 289

t = 10 ms

t = 8.3 ms 204

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 1255 A, TJ = TJ maximum,
t

= 10 ms sine wave pulse

p

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.48

< I < π x I

T(AV)

), TJ = TJ maximum 0.56

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 1.44

T(AV)

), TJ = TJ maximum 0.57

T(AV)

100 µs

V

= TJ maximum

J

DRM

I

TM

515 (190) A

55 (85) °C

7950

6690

316

224

2.16

A

V

A

kA2s

V

mΩ

mA

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Document Number: 94374

2 Revision: 30-Apr-08

ST303CLPbF Series

Inverter Grade Thyristors

Vishay High Power Products

(Hockey PUK Version), 515 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned on current

Typical delay time t

minimum

Maximum turn-off time

(1)

maximum 30

Note

(1)

tq = 10 to 20 µs for 400 to 800 V devices; tq = 15 to 30 µs for 1000 to 1200 V devices

dI/dt

d

t

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage current

= TJ maximum, V

T

J

DRM

= rated V

DRM

ITM = 2 x dI/dt

TJ = 25 °C, VDM = Rated V

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,
I

= 550 A, commutating dI/dt = 40 A/µs

TM

V

= 50 V, tp = 500 µs, dV/dt: See table in device code

R

= TJ maximum, linear to 80 % V

T

J

higher value available on request

,

I

RRM

I

DRM

TJ = TJ maximum, rated V

DRM/VRRM

1000 A/µs

0.83

10

,

DRM

500 V/µs

applied 50 mA

µs

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

applied

60

10

W

10 A

20

5

V

200 mA

3V

20 mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.11

DC operation double side cooled 0.05

DC operation single side cooled 0.011

DC operation double side cooled 0.005

Mounting force, ± 10 %

Approximate weight 250 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

- 40 to 125

- 40 to 150

9800

(1000)

°C

K/W

N

(kg)

Document Number: 94374 For technical questions, contact: [e-mail]

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Revision: 30-Apr-08 3

ST303CLPbF Series

)

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

ΔR

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

CONDUCTION ANGLE

180° 0.012 0.010 0.008 0.008

120° 0.014 0.015 0.014 0.014

90° 0.018 0.018 0.019 0.019

60° 0.026 0.027 0.027 0.028

30° 0.045 0.046 0.046 0.046

130

120

110

100

90

80

70

60

50

40

0 50 100150200250300350

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

ST3 0 3C . .L Se ri e s
(Single Side Cooled)
R ( DC) = 0.11 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

180°

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

100

90

80

70

60

50

40

30

0 100 200 300 400 500 600 700

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

ST3 0 3 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.05 K/W

thJ-hs

Cond uction Ang le

30°

60°

90°

Fig. 3 - Current Ratings Characteristics

120°

180°

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500 600

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

ST303C.. L Serie s
(Single Side Cooled)
R (DC) = 0.11 K/W

thJ-hs

30°

60°

90°

120°

Conduction Period

180°

Fig. 2 - Current Ratings Characteristics

DC

130

120

110

100

90

80

70

60

50

40

30

20

Maximum Allowable Heatsink Temperature (°C

30°

0 200 400 600 800 1000 1200

Average On-state Current (A)

ST3 0 3 C . . L Se r ie s
(Double Side Cooled)
R (DC) = 0.05 K/W

thJ-hs

Conduction Period

60°

90°

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

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ST303CLPbF Series

2000

1800

1600

1400

1200

1000

800

600

400

200

0

Maximum Average On-state Power Loss (W)

0 100 200 300 400 500 600 700 800

180°
120°

90°
60°
30°

RM S Li m i t

Cond uction Ang le

ST303C. .L Serie s
T = 12 5° C

J

Average On-state Current (A)

Fig. 5 - On-State Power Loss Characteristics

2600

2400

2200

2000

1800

1600

1400

1200

1000

800

600

400

200

Maximum Average On-state Power Loss (W)

DC
180°
120°

90°

60°

30°

RM S Li m i t

Conduction Period

ST3 0 3 C . . L Se r i e s
T = 1 2 5 °C

J

0

0 200 400 600 800 1000 1200

Average On-state Current (A)

Fig. 6 - On-state Power Loss Characteristics

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

8000

7500

7000

6500

6000

5500

5000

4500

4000

3500

Peak Half Sine Wave On-state Current (A)

3000

Fig. 8 - Maximum Non-Repetitive Surge Current

10000

1000

Instantaneous On-state Current (A)

100

Vishay High Power Products

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

ST3 03 C . . L Se r i e s

0.01 0.1 1

Pulse Train Duration (s)

Single and Double Side Cooled

012345678

Instantaneous On-state Voltage (V)

Fig. 9 - On-state Voltage Drop Characteristics

Init ia l T = 125° C

No Voltage Reapplied

Ra t e d V Re a p p l i e d

T = 25 °C

J

T = 125°C

J

ST30 3 C .. L Se r i e s

J

RRM

7000

At Any Ra t e d Load Cond ition And Wit h

Rated V Applied Following Surge.

6500

6000

5500

5000

4500

4000

ST303C..L Series

3500

Peak Half Sine Wa ve On -sta te Current (A)

3000

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

RRM

Initial T = 125°C

J

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

1

Steady State Value

R = 0.11 K/ W

thJ-hs

(Single Side Cooled)

thJ-hs

R = 0.05 K/ W

thJ-hs

0.1
(Double Side Cooled)

(DC Operation)

0.01

ST3 0 3 C . . L Se r i e s

0.001

Transient Thermal Impedance Z (K/W)

0.001 0.01 0.1 1 10

Sq u a r e W a v e Pu l se D u r a t i o n ( s)

Fig. 10 - Thermal Impedance Z

thJ-hs

Characteristics

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Revision: 30-Apr-08 5

ST303CLPbF Series

Vishay High Power Products

320

300

280

260

240

220

200

180

160

140

120

100

Maximum Reverse Recovery Charge - Qrr (µC)

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

1E4

I = 1000 A

TM

500 A

300 A

200 A

100 A

ST303C..L Series
T = 125 °C

J

80

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of On-state Current - di/dt (A/µs)

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

180
170
160
150
140
130
120
110
100

90
80
70
60
50
40
30

Maximum Reverse Rec overy Current - Irr (A)

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/dt (A/µs)

I = 1000 A

TM

500 A

300 A

200 A

100 A

ST3 03 C . .L Se r i e s
T = 1 2 5 ° C

J

100

200

400

500

1000

1E3

2500

Peak On-state C urrent (A )

1E2

1E11E21E31E

3000

1500

2000

tp

Snu bb er c irc uit
R = 10 o h m s
C = 0.47 µF
V = 80% V

ST3 0 3C . .L Se r i e s
Si n u so i d a l p u l s e
T = 40 ° C

C

50 Hz

s
s

DRM

D

Pu l se Ba se w id t h ( µs)

Fig. 13 - Frequency Characteristics

1E4

Sn u b b e r c i r c u i t
R = 10 o hm s

s

C = 0.47 µF

s

V = 80% V

D

1E3

1E2

Pe a k O n -st a t e C ur re nt ( A )

1E1

1E1 1E2 1E3 1E4

3000

DRM

2000

2500

Pu lse Ba se w id t h ( µs)

1500

1000

400

500

ST3 03 C . . L Se r i e s
Trapezoidal pulse
T = 40 ° C

tp

di/dt = 50A/µs

50 Hz

100

200

C

100

200

400

500

1000

1500

2000

2500

3000

1E1

1E1 1E2 1E3 1E4

tp

Sn u b b e r c i r c u i t
R = 10 o h ms

s

C = 0.47 µF

s

V = 80% V

D

ST3 03 C . . L Se r i e s
Si n u so i d a l p u l se
T = 5 5 ° C

C

50 Hz

DRM

Pu l se Ba se w i d t h ( µs)

Snu bb er c irc ui t
R = 10 o h m s

s

C = 0.47 µF

s

V = 80% V

D

3000

DRM

2500

2000

1500

1000

400

500

ST3 03 C . . L Se r i e s
Trapezoidal pulse
T = 55°C

tp

di/dt = 50A/µs

200

C

100

50 Hz

1E1 1E2 1E3 1E4

Pu lse Ba se w i d t h ( µs)

Fig. 14 - Frequency Characteristics

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Document Number: 94374

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(A)

ST303CLPbF Series

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

1E4

Snu bb er c irc ui t
R = 10 o h ms

s

C = 0.47 µF

s

V = 80% V

D

1E3

1E2

Pe a k O n- st a te Cu rre nt (A )

1E1

1E1 1E2 1E3 1E4

1E5

1E4

1E3

1E2

Peak On-st at e Curren t (A )

1E1

1E1 1E2 1E3 1E4

3000

2500

tp

DRM

1500

2000

Pu lse Ba se w i d t h ( µs)

0.4

ST3 03 C . . L Se r ie s
Si n u so i d a l p u l se

Pul se Ba sew id t h ( µs)

0.5

1000

100

200

400

500

ST3 03 C . . L Se r i e s
Trap ezoid al p ulse
T = 40°C

C

tp

di/ dt = 100A/ µs

20 joules per pulse

10

5

3

2

1

Fig. 16 - Maximum On-State Energy Power Loss Characteristics

Snubber circuit
R = 10 o h m s

s

C = 0.47 µF

s

V = 80% V

50 Hz

D

1E1 1E2 1E3 1E4

Fig. 15 - Frequency Characteristics

tp

1E11E21E31E4

1E1

Vishay High Power Products

DRM

2000

2500

3000

ST3 03 C . . L Se r i e s
Rectangular pulse

di/dt = 50A/µs

500

1000

1500

tp

Pu l se Ba se w i d t h ( µs)

3

2

1

0.5

0.4

Pu l se Ba se w id t h ( µs)

200

400

ST303C..L Series
Trapezoidal pulse
T = 55 ° C

C

di/dt = 100A/µs

20 jo ule s p er p ulse

10

5

100

50 Hz

100

Rec tangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% ra te d di / dt : 10V, 10o hms
tr<=1 µs

10

(a)

(b)

T
j=-40 °C

Tj =25 °C

T
j=125 °C

(1) PGM = 10W, t p = 20ms
(2) PGM = 20W, t p = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, t p = 3.3ms

1

(2)

(3)

(1)

(4)

VGD

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

IGD

De vi ce : ST303C.. L Series Frequenc y Limited by PG(AV)

Instantaneous Gate Current

Fig. 17 - Gate Characteristics

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Revision: 30-Apr-08 7

ST303CLPbF Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 30 3 C 12 L H K 1 - P

324

1 - Thyristor

2 - Essential part number

3 - 3 = Fast turn-off

4 - C = Ceramic PUK

5 - Voltage code x 100 = V

(see Voltage Ratings table)

6 - C = PUK case TO-200AC (B-PUK)

7 - Reapplied dV/dt code (for t

8 -t

9 - 0 = Eyelet terminals

10

11

code

q

(gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals

(gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals

(gate and auxiliary cathode soldered leads)

3 = Fast-on terminals

(gate and auxiliary cathode soldered leads)

- Critical dV/dt:

None = 500 V/µs (standard value)

L = 1000 V/µs (special selection)

- P = Lead (Pb)-free

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

51

6 7 8 9 10 11

RRM

(µs)

t

test condition)

q

q

up to 800 V

(µs)

t

q

only for
1000/1200 V

* Standard part number.
All other types available only on request.

dV/dt - tq combinations available

dV/dt (V/µs) 20 50 100 200 400

CN DN EN

10

CM DM EM FM HM

12

CL DL EL FL* HL

15

CK DK EK FK* HK

20

CL - -

15

CP DP - -

18

CK DK EK FK* HK

20

CJ DJ EJ FJ* HJ

25
30

-DHEHFHHH

FN* HN

--

-

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95076

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8 Revision: 30-Apr-08

Document Number: 94374