C&H Technology ST300SPbF User Manual
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TO-209AE (TO-118)
PRODUCT SUMMARY
I
T(AV)
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• International standard case TO-209AE (TO-118)
• Hermetic metal case with ceramic insulator
• Threaded studs UNF 3/4"-16UNF-2A or ISO M24 x 1.5
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
300 A
• Controlled DC power supplies
• AC controllers
ST300SPbF Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 8000
60 Hz 8380
50 Hz 320
60 Hz 292
Typical 100 µs
300 A
75 °C
470
400 to 2000 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
ST300S
V
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
DRM/VRRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
A
kA2s
MAXIMUM
= TJ MAXIMUM
J
mA
50
Document Number: 94406 For technical questions, contact: ind-modules@vishay.com
Revision: 06-May-08 1
www.vishay.com
ST300SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 300 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3200 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave 300 A
75 °C
DC at 64 °C case temperature 470
t = 10 ms
t = 8.3 ms 8380
t = 10 ms
t = 8.3 ms 7040
t = 10 ms
t = 8.3 ms 292
t = 10 ms
t = 8.3 ms 207
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 0.98
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.73
T(AV)
), TJ = TJ maximum 0.97
T(AV)
), TJ = TJ maximum 0.74
T(AV)
8000
6730
320
226
Ipk = 940 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.66 V
TJ = 25 °C, anode supply 12 V resistive load
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dIdt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
≤ 1 µs
r
DRM
Gate current 1 A, dIg/dt = 1 A/µs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
R
1000 A/µs
1.0
µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
,
I
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 30 mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94406
2 Revision: 06-May-08
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