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TO-209AE (TO-118)
PRODUCT SUMMARY
I
T(AV)
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• International standard case TO-209AE (TO-118)
• Hermetic metal case with ceramic insulator
• Threaded studs UNF 3/4"-16UNF-2A or ISO M24 x 1.5
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
300 A
• Controlled DC power supplies
• AC controllers
ST300SPbF Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 8000
60 Hz 8380
50 Hz 320
60 Hz 292
Typical 100 µs
300 A
75 °C
470
400 to 2000 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
ST300S
V
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
DRM/VRRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
A
kA2s
MAXIMUM
= TJ MAXIMUM
J
mA
50
Document Number: 94406 For technical questions, contact: ind-modules@vishay.com
Revision: 06-May-08 1
www.vishay.com

ST300SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 300 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3200 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave 300 A
75 °C
DC at 64 °C case temperature 470
t = 10 ms
t = 8.3 ms 8380
t = 10 ms
t = 8.3 ms 7040
t = 10 ms
t = 8.3 ms 292
t = 10 ms
t = 8.3 ms 207
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 0.98
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.73
T(AV)
), TJ = TJ maximum 0.97
T(AV)
), TJ = TJ maximum 0.74
T(AV)
8000
6730
320
226
Ipk = 940 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.66 V
TJ = 25 °C, anode supply 12 V resistive load
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dIdt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
≤ 1 µs
r
DRM
Gate current 1 A, dIg/dt = 1 A/µs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
R
1000 A/µs
1.0
µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
,
I
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 30 mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94406
2 Revision: 06-May-08

ST300SPbF Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 300 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
G(AV)
GM
TJ = TJ maximum, tp ≤ 5 ms 10.0
GM
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp ≤ 5 ms 3.0 A
GM
TJ = TJ maximum, tp ≤ 5 ms
GM
TJ = - 40 °C
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GT
GT
GD
GD
= 25 °C 100 200
J
T
= 125 °C 50 -
J
TJ = - 40 °C 2.5 -
= 25 °C 1.8 3
T
J
= 125 °C 1.1 -
T
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
anode to
DRM
cathode applied
VALUES
TYP. MAX.
20
5.0
200 -
10 mA
0.25 V
UNITS
W
V
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
J
Stg
thJC
thCS
DC operation 0.10
Mounting surface, smooth, flat and greased 0.03
Mounting torque, ± 10 % Non-lubricated threads
Approximate weight 535 g
Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)
ΔR
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.011 0.008
120° 0.013 0.014
T
90° 0.017 0.018
= TJ maximum K/W
J
60° 0.025 0.026
30° 0.041 0.042
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
- 40 to 125
- 40 to 150
48.5
(425)
(lbf · in)
°C
K/W
N · m
Document Number: 94406 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 06-May-08 3

ST300SPbF Series
Vishay High Power Products
130
120
110
100
90
80
70
Maximum Allowable Case Temperature (°C)
0 50 100 150 200 250 300 350
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
ST3 00 S Se r ie s
R (DC) = 0.10 K/ W
thJC
Cond uction Ang le
30°
60°
90°
120°
180°
Average On-state Current (A)
480
440
400
360
320
280
180°
120°
90°
60°
30°
RM S Li m i t
240
200
160
120
80
40
0
Maximum Average On-state Power Loss (W)
0 40 80 120 160 200 240 280 320
Avera ge On-state Current (A)
Phase Control Thyristors
(Stud Version), 300 A
130
120
110
100
90
80
70
60
Maximum Allowable Case Temp erature (°C)
0100200300400500
R
0
.
0
t
8
h
S
K
A
/
W
0
.
1
2
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
Conduction Angle
ST300S Se rie s
T = 125°C
J
W
0
.
6
K
/
W
1
.
2
K
/
W
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
=
0
.
0
3
K
/
W
D
e
l
t
a
ST3 00 S Se r ie s
R (DC) = 0.10 K/W
thJC
Conduc tion Period
30°
60°
90°
120°
Averag e On-sta te Current (A)
R
180°
DC
650
600
550
500
450
400
350
300
250
200
150
100
50
Maximum Averag e On-state Power Loss (W)
DC
180°
120°
90°
60°
30°
RM S Li m it
0
0
100 200 300 400 500
Average On-state Current (A)
Conduction Period
ST300S Se rie s
T = 125°C
J
R = 0. 03 K/
th
S
A
0
.
0
8
K
0
.
1
2
K
0
.
2
K
0
.
3
K
0
.
6
K
1
.
2
K
W
/
W
De
l
t
/
W
/
W
/
W
/
W
/
W
a
R
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94406
4 Revision: 06-May-08

ST300SPbF Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 300 A
7500
At Any Ra te d Loa d Condition And With
Rat ed V App lie d Following Surge .
7000
6500
6000
5500
5000
4500
4000
3500
Pe a k Ha lf Sine Wave On-sta te Current (A)
3000
110100
Number Of Equal Amp litud e Half Cycle C urrent Pulses (N)
RRM
ST3 00 S Se r ie s
Ini t ial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
10000
T = 2 5° C
J
T = 12 5° C
J
8500
Maximum Non Repetitive Surge Current
Peak Half Sine Wa ve On-stat e Current (A )
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
Versus Pulse Train Duration. Control
Of Cond uc tion May Not Be Maintained .
ST300S Series
0.01 0.1 1
Pulse Tra in Du ra t io n ( s)
Initia l T = 125°C
No Voltage Reapplied
Rated V Reap plied
RRM
J
1000
ST3 00 S Se r i e s
Instantaneous On-state Current (A)
100
0123456789
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
1
Stead y Stat e Value
R = 0 . 10 K/ W
thJC
(DC Operation)
thJC
0.1
0.01
ST3 0 0 S Se r i e s
0.001
Tran sient Thermal Imp ed ance Z (K/ W)
0.001 0.01 0. 1 1 10
Sq u a r e W a v e P u l se D u r a t i o n ( s)
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
Document Number: 94406 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 06-May-08 5

ST300SPbF Series
Vishay High Power Products
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
10
tr<=1 µs
1
Instantaneous Gate Voltag e (V)
0.1
0.001 0.01 0.1 1 10 100
ORDERING INFORMATION TABLE
Device code
ST 30 0 S 20 P 0 - PbF
VGD
Phase Control Thyristors
(Stud Version), 300 A
(a)
(b)
Tj = - 4 0 °C
Tj = 25 ° C
Tj = 12 5 ° C
IG D
Device : ST300S Series
Fig. 9 - Gate Characteristics
Instantaneous Gate Current (A)
Fre q u e n c y Lim i t e d b y PG ( A V )
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(2)
(1)
(3)
(4)
324
51
6789
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4
- S = Compression bonding stud
5
- Voltage code x 100 = V
6
- P = Stud base 3/4" 16UNF-2A threads
(see Voltage Ratings table)
RRM
M = Stud base metric threads (M24 x 1.5)
7
- 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3 = Threaded top terminal 3/8" 24UNF-2A
8 - Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
9 - Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95084
www.vishay.com For technical questions, contact: ind-modules@vishay.com
6 Revision: 06-May-08
Document Number: 94406