C&H Technology ST280SPbF User Manual

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TO-209AB (TO-93)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 280 A

FEATURES

• Center amplifying gate

• International standard case TO-209AB (TO-93)

• Hermetic metal case with glass-metal seal
insulator

• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

280 A

• Controlled DC power supplies

• AC controllers

ST280SPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 7850

60 Hz 8220

50 Hz 308

60 Hz 281

Typical 100 µs

280 A

85 °C

440

400/600 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST280S

V

VOLTAGE

CODE

04 400 500

06 600 700

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

30

Document Number: 94402 For technical questions, contact: [e-mail]
Revision: 05-May-08 1

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ST280SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 280 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3100 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave 280 A

85 °C

DC at 75 °C case temperature 440

t = 10 ms

t = 8.3 ms 8220

t = 10 ms

t = 8.3 ms 6900

t = 10 ms

t = 8.3 ms 220

t = 10 ms

t = 8.3 ms 200

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.88

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.47

T(AV)

), TJ = TJ maximum 0.84

T(AV)

), TJ = TJ maximum 0.50

T(AV)

7850

6600

310

218

Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.28 V

TJ = 25 °C, anode supply 12 V resistive load

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

RRM,

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

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Document Number: 94402

2 Revision: 05-May-08

ST280SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 280 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

= 125 °C 1.2 -

T

J

Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value

TJ = TJ maximum

which will not trigger any unit with
rated V

anode to cathode

DRM

applied

VALUES

TYP. MAX.

20

5.0

180 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.105

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 280 g

Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.016 0.012

120° 0.019 0.020

T

90° 0.025 0.027

= TJ maximum K/W

J

60° 0.036 0.037

30° 0.060 0.060

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

31

(275)

24.5

(210)

(lbf · in)

°C

K/W

N · m

Document Number: 94402 For technical questions, contact: [e-mail]

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Revision: 05-May-08 3

ST280SPbF Series

Vishay High Power Products

130

120

110

100

90

80

Maximum Allowable Ca se Temperature (°C)

0 50 100 150 200 250 300

ST2 80 S Se r i e s
R (DC) = 0.105 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

350

180°

300

250

200

120°

90°
60°
30°

RM S Lim it

150

100

50

Phase Control Thyristors

(Stud Version), 280 A

180°

Maximum Allowable Case Temperature (°C)

R

0

t

h

.

1

S

6

A

K

=

/

0

W

.

2

K

/

W

0

.

2

5

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

6

K

Conduc tio n Angle

ST280S Se ries
T = 125°C

J

/

W

0

.

8

K

/

W

1

.

2

K

/

W

130

120

ST2 80 S Se r ie s
R ( DC) = 0.105 K/ W

thJC

110

Conduc tion Period

100

90

30°

80

70

60°

90°

120°

180°

0 50 100 150 200 250 300 350 400 450

Average On-state Current (A)

0

.

1

K

/

W

­D

e

l

t

a

R

DC

0

Maximum Average On-state Power Loss (W)

0

50 100 150 200 250 300

Avera ge On-st at e Curre nt ( A)

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

500

450

400

350

300

DC
180°
120°

90°
60°
30°

250

RM S Lim i t

200

Conduction Period

150

100

50

0

Maximum Average On-state Power Loss (W)

0 50 100150200250300350400450

ST280S Series
T = 12 5° C

J

Average On-state Current (A)

0

0

0

0

0

.

0

.

4

0

.

1

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

R

0

.

0

t

6

h

S

K

A

/

.

0

W

8

K

/

W

.

1

2

K

/

W

.

1

6

K

/

W

.

2

K

/

W

3

K

/

W

K

/

W

6

K

/

W

K

/

W

=

0

.

0

3

K

/

W

­D

e

l

t

a

R

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94402

4 Revision: 05-May-08

ST280SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 280 A

7000

At Any Ra ted Load Condition And With

Rated V Applied Following Surge.

6500

6000

5500

5000

4500

4000

3500

Pea k Half Sine Wave On-sta te Curren t (A)

3000

Number Of Equal Amp litude Ha lf Cyc le Current Pulses (N)

ST2 80 S Se r ie s

110100

RRM

Initia l T = 125°C

J

@ 6 0 Hz 0. 00 8 3 s
@ 5 0 Hz 0. 01 0 0 s

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000

T = 25 ° C

J

7000

At Any Rate d Load Condition And Wit h

Rated V Applied Following Surge.

6500

6000

5500

5000

4500

4000

3500

Pe a k Ha lf Sin e Wave On-state Curren t (A)

3000

110100

Numb er Of Eq ua l Amp litu d e Half C yc le Cu rren t Pulses (N)

RRM

ST2 80 S Se r i e s

Initia l T = 125°C

J

@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s

1

thJC

0.1

0.01

1000

Instantaneous On-state Current (A)

100

Fig. 7 - On-State Voltage Drop Characteristics

Steady State Value

R = 0.105 K/W

thJC

(DC Operation)

T = 125°C

J

ST280S Se rie s

0.5 1 1.5 2 2.5 3 3.5 4

In st a n t a n e o us O n- sta t e V o lt a g e ( V)

ST2 8 0 S Se r i e s

Tra nsient Th ermal Imp ed anc e Z (K/ W)

0.001

0.001 0.01 0.1 1 10

Sq u a r e W a v e P u l se D u r a t i o n ( s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

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Revision: 05-May-08 5

ST280SPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/d t : 20V, 10ohms; tr<=1 µs
b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

Phase Control Thyristors

(Stud Version), 280 A

(a)

(b)

Tj = -4 0 ° C

Tj =2 5 ° C

Tj = 12 5 ° C

IG D

D e v i c e : ST2 80 S Se r ie s

Instanta neous Gate Current (A)

Fig. 9 - Gate Characteristics

Fr eq u e n c y Lim i t e d b y PG ( AV )

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(1) (2) (3)

(4)

Device code

ST 28 0 S 06 P 0 V PbF

324

51

6789

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- S = Compression bonding stud

5

- Voltage code x 100 = V

6

- P = Stud base 3/4"-16UNF-2A threads

7

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode leads)

8 - V = Glass-metal seal

9

- Lead (Pb)-free

Note: For metric device M16 x 1.5 contact factory

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95077

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 05-May-08

Document Number: 94402