C&H Technology ST280CHPbF User Manual

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ST280CHPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 500 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

TO-200AB (A-PUK)

• Extended temperature range

• Lead (Pb)-free

PRODUCT SUMMARY

I

T(AV)

500 A

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 7200

60 Hz 7500

50 Hz 260

60 Hz 230

Typical 100 µs

500 A

80 °C

1130 A

25 °C

A

kA2s

400 to 600 V

- 40 to 150 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST280CH..C

Document Number: 94401 For technical questions, contact: [e-mail]
Revision: 05-May-08 1

VOLTAGE

CODE

04 400 500

06 600 700

DRM/VRRM

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

www.vishay.com

MAXIMUM

mA

75

ST280CHPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 500 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2600 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1130

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 7500

t = 10 ms

t = 8.3 ms 6300

t = 10 ms

t = 8.3 ms 235

t = 10 ms

t = 8.3 ms 165

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.88

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.47

T(AV)

), TJ = TJ maximum 0.84

T(AV)

), TJ = TJ maximum 0.50

T(AV)

500 (185) A

80 (110) °C

7200

6000

260

180

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 75 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94401

2 Revision: 05-May-08

ST280CHPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 500 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 150 °C 30 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

T

= 150 °C 1.0 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

DRM

anode to

cathode applied

VALUES

TYP. MAX.

20

5.0

180 -

10 mA

0.30 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction and
storage temperature range

Maximum thermal resistance,
junction to heatsink

Maximum thermal resistance,
case to heatsink

Mounting force, ± 10 %

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

ΔR

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.016 0.017 0.011 0.011

120° 0.019 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

60° 0.035 0.035 0.036 0.037

30° 0.060 0.060 0.060 0.061

Note

• The table above shows the increment of thermal resistance R

T

R

J

R

, T

thJ-hs

thC-hs

Stg

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 150 °C

4900
(500)

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

K/W

N

(kg)

Document Number: 94401 For technical questions, contact: [e-mail]

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Revision: 05-May-08 3

ST280CHPbF Series

Vishay High Power Products

150

140

130

120

110

100

90

80

Maximum Allowable

70

60

Heatsink Temperature (°C)

50

40

0

Fig. 1 - Current Ratings Characteristics

150
140
130
120
110
100

90
80
70
60

Maximum Allowable

50
40

Heatsink Temperature (°C)

30
20

0

Fig. 2 - Current Ratings Characteristics

ST280CH..C Series
(Single side cooled)
R

(DC) = 0.17 K/W

thJ-hs

30°

60°

100 200 300 400

Conduction angle

90°

120°

Average On-State Current (A)

ST280CH..C Series
(Single side cooled)

(DC) = 0.17 K/W

R

thJ-hs

Conduction period

30°

60°

90°

120°

180°

100 200 300 400 500 600

Average On-State Current (A)

Phase Control Thyristors

(Hockey PUK Version), 500 A

150
140
130
120
110

Ø

180°

500

Ø

DC

700

100

90
80
70
60

Maximum Allowable

Maximum Average

50
40

Heatsink Temperature (°C)

30
20

1300
1200
1100
1000

900
800
700
600
500
400
300

On-State Power Loss (W)

200
100

ST280CH..C Series
(Double side cooled)

(DC) = 0.08 K/W

R

thJ-hs

Ø

Conduction period

30°

60°

90°

120°

180°

DC

200 400 600 1000

8000

Average On-State Current (A)

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

0

100 200 300 600

ST280CH..C Series

= 150 °C

T

J

4000

RMS limit

Ø

Conduction angle

500

700

Average On-State Current (A)

Fig. 5 - On-State Power Loss Characteristics

1200

800

150
140
130
120
110
100

90
80

70
60

Maximum Allowable

50
40

Heatsink Temperature (°C)

30
20

30°

100 300 500200 400 600 700

0

Average On-State Current (A)

Fig. 3 - Current Ratings Characteristics

ST280CH..C Series
(Double side cooled)
R

(DC) = 0.08 K/W

thJ-hs

Conduction angle

60°

90°

120°

Ø

180°

800

1800

1600

1400

1200

1000

800

600

Maximum Average

400

On-State Power Loss (W)

200

0

DC

180°
120°

90°
60°
30°

200 400 600 800

0

Average On-State Current (A)

Fig. 6 - On-State Power Loss Characteristics

RMS limit

Ø

Conduction period

ST280CH..C Series
T

= 150 °C

J

12001000

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Document Number: 94401

4 Revision: 05-May-08

ST280CHPbF Series

6500

At any rated load condition and with

6000

5500

5000

4500

4000

On-State Current (A)

Peak Half Sine Wave

3500

3000

rated V

ST280CH..C Series

1

Number Of Equal Amplitude Half Cycle

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

applied following surge.

RRM

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

Current Pulses (N)

Phase Control Thyristors

(Hockey PUK Version), 500 A

Initial T

= 150 °C

J

Peak Half Sine Wave

100

10 000

TJ = 150 °C

Vishay High Power Products

7500

Maximum non-repetitive surge current

7000

6500

6000

5500

5000

4500

4000

On-State Current (A)

3500

3000

2500

versus pulse train duration. Control

of conduction may not be maintained.

ST280CH..C Series

0.01

Initial TJ = 150 °C
No voltage reapplied
Rated V

0.1

reapplied

RRM

Pulse Train Duration (s)

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

1

1

Steady state value

= 0.17 K/W

R

thJ-hs

(Single side cooled)

= 0.08 K/W

R

0.1

thJ-hs

(Double side cooled)
(DC operation)

- Transient

0.01

thJ-hs

Z

Thermal Impedance (K/W)

1000

ST280CH..C Series

Instantaneous On-State Current (A)

100

1.0 2.01.5 2.5 3.0 3.5

0.5

Instantaneous On-State Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

TJ = 25 °C

4.0

ST280CH..C Series

0.001

0.001 0.01 0.1 1

10

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Document Number: 94401 For technical questions, contact: [e-mail]

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Revision: 05-May-08 5

ST280CHPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω

10

tr ≤ 1 µs

1

V

GD

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1

ORDERING INFORMATION TABLE

Device code

ST 28 0 CH 06 C 1 - PbF

I

GD

Phase Control Thyristors

(Hockey PUK Version), 500 A

(a)

(b)

T

J

T

= 40 °C

J

T

J

= 150 °C

Device: ST280CH..C Series

Instantaneous Gate Current (A)

= 25 °C

Frequency limited by P

Fig. 11 - Gate Characteristics

(1) PGM = 10 W, tp = 4 ms
(2) P

= 20 W, tp = 2 ms

GM

(3) P

= 40 W, tp = 1 ms

GM

(4) P

= 60 W, tp = 0.66 ms

GM

(1) (2)

G(AV)

10 100

(3)

(4)

324

51

6789

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- CH = Ceramic PUK, high temperature

5

- Voltage code x 100 = V

(see Voltage Ratings table)

RRM

6 - C = PUK case TO-200AB (A-PUK)

7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8 - Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

9 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95074

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94401

6 Revision: 05-May-08

DIMENSIONS in millimeters (inches)

TO-200AB (A-PUK)

Case Style TO-200AB (A-PUK)

Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum

19 (0.75)

DIA. MAX.

Outline Dimensions

Vishay High Power Products

0.3 (0.01) MIN.

13.7/14.4

(0.54/0.57)

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

42 (1.65) MAX.

0.3 (0.01) MIN.

Gate terminal for

1.47 (0.06) DIA.
pin receptacle

6.5 (0.26)

4.75 (0.19)

25° ± 5°

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95074 For technical questions concerning discrete products, contact: [e-mail]
Revision: 01-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1